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| Number | Title | Issue Date |
| 7893522 | Structural body and manufacturing method thereof The present invention includes a substrate structural body having a high electrostatic chuck force at a low voltage even when an insulated board is used, and a method for manufacturing the substrate structural body. As the substrate structural body, there is provide... | 02/22/2011 |
| 7420264 | High reflector tunable stress coating, such as for a MEMS mirror An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of si... | 09/02/2008 |
| 7400005 | Semiconductor memory device having ferroelectric capacitors with hydrogen barriers A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydroge... | 07/15/2008 |
| 7235469 | Semiconductor device and method for manufacturing the same A semiconductor device suitable for the miniaturization and comprising properly controlled Si/SiGe gate electrode comprises an insulator formed on a semiconductor substrate, a first gate electrode formed on the insulator and including silicon-germanium, wherein a ge... | 06/26/2007 |
| 7187058 | Semiconductor component having a pn junction and a passivation layer applied on a surface The invention relates to a semiconductor component having a semiconductor body (100) and at least one pn junction present in the semiconductor body (100) and an amorphous passivation layer (70) arranged at least in sections on a surface (101 | 03/06/2007 |
| 7180129 | Semiconductor device including insulating layer A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first ... | 02/20/2007 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7071538 | One stack with steam oxide for charge retention A semiconductor device includes a substrate that further includes source, drain and channel regions. The device may further include a bottom oxide layer formed upon the substrate, a charge storage layer formed upon the bottom oxide layer, and a steam oxide layer the... | 07/04/2006 |
| 7030462 | Heterojunction bipolar transistor having specified lattice constants A Heterojunction Bipolar Transistor, HBT, (100) containing a collector layer (104), a base layer (105) and an emitter layer (106) is constructed such that the collector layer (104), the base layer (105) and the emitter layer... | 04/18/2006 |
| 7030468 | Low k and ultra low k SiCOH dielectric films and methods to form the same Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water v... | 04/18/2006 |
| 7009281 | Small volume process chamber with hot inner surfaces A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing tempera... | 03/07/2006 |
| 6972223 | Use of atomic oxygen process for improved barrier layer A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed ov... | 12/06/2005 |
| 6946405 | Polyparaxylylene film, production method therefor and semiconductor device An organic polymer film of low dielectric constant and high heating resistance which is applicable as an insulating layer of a semiconductor devices is provided, as well as a manufacturing method for the film and a semiconductor device incorporating the film. ... | 09/20/2005 |
| 6940151 | Silicon-rich low thermal budget silicon nitride for integrated circuits A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped device... | 09/06/2005 |
| 6853054 | High frequency semiconductor device A high frequency semiconductor device including wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion... | 02/08/2005 |
| 6849923 | Semiconductor device and manufacturing method of the same Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the ... | 02/01/2005 |
| 6753568 | Memory device A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a source/drain path (4) and data is read by monit... | 06/22/2004 |
| 6743681 | Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride Gate and storage dielectric systems and methods of their fabrication are presented. A passivated overlayer deposited between a layer of dielectric material and a gate or first storage plate maintains a high K (dielectric constant) value of the dielectric material. T... | 06/01/2004 |
| 6713846 | Multilayer high κ dielectric films A new multilayer dielectric film for improving dielectric constant and thermal stability of gate dielectrics is provided. The multilayer dielectric film comprises a first layer formed of a metal oxide material having a high dielectric constant, and a second layer fo... | 03/30/2004 |
| 6624053 | Damascene-type interconnection structure and its production process A interconnection structure of the damascene type is produced on a surface of a microelectronic device that includes at least one dielectric material layer for housing at least one interconnection and at least one interface layer on the dielectric materia... | 09/23/2003 |
| 6620534 | Film having enhanced reflow characteristics at low thermal budget A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In thi... | 09/16/2003 |
| 6509627 | Flowable germanium doped silicate glass for use as a spacer oxide The invention is a method for constructing an integrated circuit structure and an apparatus produced by the method. The method generally comprises constructing an integrated circuit structure by disposing a layer of doped oxide, the dopant being iso-elect... | 01/21/2003 |
| 6504234 | Semiconductor device with interlayer film comprising a diffusion prevention layer to keep metal impurities from invading the underlying semiconductor substrate An interlayer film covering a semiconductor device formed on the semiconductor substrate has a film having ability of gettering the metal impurities invading from an upper portion of the interlayer film, and with this ability, the metal impurities are pre... | 01/07/2003 |
| 6483173 | Solution to black diamond film delamination problem Low k dielectrics such as black diamond have a tendency to delaminate from the edges of a silicon wafer, causing multiple problems, including blinding of the alignment mark. This problem has been overcome by inserting a layer of silicon nitride between th... | 11/19/2002 |
| 6462402 | Microelectronic substrate comprised of etch stop layer, stiffening layer, and endpointing layer A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the microelectronic substrate can include a semiconductor base, a first material, such as an oxide, disposed on the base, a second material, ... | 10/08/2002 |
| 6348725 | Plasma processes for depositing low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Disso... | 02/19/2002 |
| 6342445 | Method for fabricating an SrRuO3 film A method of fabricating an SrRuO3 thin film is disclosed. The method utilizes a multi-step deposition process for the separate control of the Ru reagent, relative to the Sr reagent, which requires a much lower deposition temperature than the Sr... | 01/29/2002 |
| 6329703 | Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact A contact between a polycrystalline silicon structure and a monocrystalline silicon region is produced by doping the silicon structure in amorphous or polycrystalline form and/or doping the monocrystalline silicon region with a dopant, in particular with ... | 12/11/2001 |
| 6252295 | Adhesion of silicon carbide films The adhesion of a silicon carbide containing film to a surface is enhanced by employing a transition film of silicon nitride, silicon dioxide and/or silicon oxynitride.... | 06/26/2001 |
| 6235652 | High rate silicon dioxide deposition at low pressures High rate silicon dioxide deposition at low pressures, including a method of depositing silicon dioxide providing a high rate of deposition at a low process chamber pressure, yielding a film with excellent uniformity and with an absence of moisture inclus... | 05/22/2001 |
| 6184572 | Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layer... | 02/06/2001 |
| 6175146 | Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry In one aspect, the invention provides a method of forming an integrated circuitry memory device. In one preferred implementation, a conductive layer is formed over both memory array areas and peripheral circuitry areas. A refractory metal layer is formed ... | 01/16/2001 |
| 6166428 | Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon A semiconductor device having at least a first and second type of devices formed in the substrate of the semiconductor device and having a hydrogen free barrier layer formed by implanting nitrogen into a layer of amorphous silicon or polysilicon formed on... | 12/26/2000 |
| 6166427 | Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application A method for producing a dielectric layer in a semiconductor product includes two steps. The first step is forming a fluorinated layer (e.g. SiOF or fluorosilicate glass ("FSG")) which includes a material formed in part with fluorine. The second step is f... | 12/26/2000 |
| 6150719 | Amorphous hydrogenated carbon hermetic structure and fabrication method A hard layer of amorphous hydrogenated carbon (DLC) overlies a polymer film structure and a plurality of soft layers of DLC alternate with a plurality of hard layers of DLC over the barrier base to form a corrosion resistant structure. The polymer film st... | 11/21/2000 |
| 6121681 | Semiconductor device A resin-encapsulated semiconductor package and a packaging structure, make it possible to provide for a high density mounting arrangement. Specifically, outer leads protrude from the two long sides of a rectangular package. The inner leads in the package,... | 09/19/2000 |
| 6104081 | Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks... | 08/15/2000 |
| 6100578 | Silicon-based functional matrix substrate and optical integrated oxide device An optical integrated oxide device uses a silicon-based functional matrix substrate on which both an oxide device and a semiconductor light emitting device can be commonly integrated with an optimum structure and a high density. A single-crystal Si substr... | 08/08/2000 |
| 6093956 | Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of the at least two port... | 07/25/2000 |
| 6072227 | Low power method of depositing a low k dielectric with organo silane A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner o... | 06/06/2000 |
