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Class 257/625 - Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the mesa semiconductor body is intimately
No. of patents: 110
Last issue date: 05/08/2012


1      
NumberTitleIssue Date
8174094Bonded structures formed by plasma enhanced bonding
An electronic device comprises a substrate comprising a first surface and a second surface, a substrate carrier comprising a first surface and a second surface, and an inorganic material bonding the second surface of the substrate and the second surface of the subst...
05/08/2012
8106486Electronic apparatus with an electrical conductor in the form of a liquid and an electrical insulator with a light-curing property
In a method of making an electronic apparatus, electronic devices and a mold are placed in a package such that pads of electronic devices are covered with the mold. An electrical insulator is poured into the package, in which the mold is placed, to fill the package....
01/31/2012
7952173Nanometric device with a hosting structure of nanometric elements
A nanometric device comprising a substrate; a plurality of conductive spacers of a conductive material, each conductive spacer being arranged on top of and transverse to the substrate, the conductive spacers including respective pairs of conductive spacers defining ...
05/31/2011
7400029LED illumination system
The present invention is achieved with the object of providing an illumination system formed of an LED light emitting body and a socket which can appropriately release heat from LED chips. This object is achieved in the following manner. A heat conducting layer 1...
07/15/2008
7368801Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same
A fuse link is formed between first and second terminals. The first and second terminals and fuse link have a polysilicon layer and a layer formed on the polysilicon layer and containing a metal element. At least a portion of the fuse link is an amorphous silicon la...
05/06/2008
7361978Laser diode packaging
A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second sid...
04/22/2008
7321161LED package assembly with datum reference feature
An LED package includes a datum reference feature that is external to the insulating body of the LED package and has a known, fixed relationship to the heat sink. The LED die is mounted to the heat sink such that the LED die has a fixed relationship to the heat sink...
01/22/2008
7320904Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit
A method for manufacturing electrically non-active structures for an electronic circuit integrated on a semiconductor substrate is provided, with the electronic circuit including first and second electrically active structures. The method includes inserting the elec...
01/22/2008
7288828Metal oxide semiconductor transistor device
A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gat...
10/30/2007
7288438Solder deposition on wafer backside for thin-die thermal interface material
A solder is deposited on the backside of a wafer. The wafer can be pre-deposited with a barrier layer such as a titanium base and other materials. Deposition is carried out by electroplating, electroless plating, chemical vapor deposition, and physical vapor deposit...
10/30/2007
7235875Modular heat sink decoupling capacitor array forming heat sink fins and power distribution interposer module
A modular heat sink decoupling capacitor array includes a plurality of modules, each defining parallel distributed decoupling plates, and each module forming a heat sink fi. Each module includes multiple spaced apart contacts for providing low inductance connections...
06/26/2007
7211891Electronic heat pump device, laser component, optical pickup and electronic equipment
There is provided a small-size electronic heat pump device which is low in power consumption and which secures a vacuum gap without use of an additional circuit. The electronic heat pump device includes an emitter 1 and a collector 2. An electrically a...
05/01/2007
7202469Solid-state imaging device with molded resin ribs and method of manufacturing
A solid-state imaging device includes a wiring board composed of an insulating resin, frame-shaped ribs arranged on the wiring board, a transparent plate arranged on an upper surface of the ribs, a plurality of wiring members that electrically lead from an internal ...
04/10/2007
7196403Semiconductor package with heat spreader
A semiconductor package with heat spreader is disclosed. In one embodiment, the semiconductor package comprises a device carrier having a plurality of contact areas and a semiconductor die having a plurality of die pads of an active surface, the semiconductor die be...
03/27/2007
7166914Semiconductor package with heat sink
A packaged semiconductor chip including the chip, and a package element such as a heat sink is made by connecting flexible leads between contacts on the chip and terminals on a dielectric element such as a sheet or plate and moving the sheet or plate away from the c...
01/23/2007
7091603Semiconductor device
In a semiconductor device having semiconductor chips, a lower heat sink which is joined on the principal rear surface side of the semiconductor chips and an upper heat sink which is joined on the principal front surface side of the semiconductor chips, wherein subst...
08/15/2006
7091602Miniature moldlocks for heatsink or flag for an overmolded plastic package
A system of mold locks (28, 30) is formed on a heatsink (2) of a packaged semiconductor to prevent/mitigate delamination. The mold locks (4, 12) anchor a plastic mold compound (34) that forms the protective cover for the packaged semicond...
08/15/2006
7084495Electroosmotic pumps using porous frits for cooling integrated circuit stacks
A stack of heat generating integrated circuit chips may be provided with intervening cooling integrated circuit chips. The cooling integrated circuit chips may include microchannels for the flow of the cooling fluid. The cooling fluid may be pumped using the integra...
08/01/2006
7067903Heat spreader and semiconductor device and package using the same
A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat...
06/27/2006
7060515Method of manufacturing a laser diode package
A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second sid...
06/13/2006
7057298Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material
A switching chip using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink, an insulating substrate and a conductive plate, with a first conductive layer sandwiched in between. Further, a diode chip having a smal...
06/06/2006
7053426Semiconductor device with heat sink
A semiconductor device includes a glass substrate, a heat sink formed on the glass substrate and a transistor formed on the heat sink. The transistor includes an active layer formed on the heat sink and having a source region, a channel region and a drain region. A ...
05/30/2006
7053417Semiconductor led device and producing method
The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface & boundary of a device and a pn-junction boundary, and enhances the light...
05/30/2006
7030501Semiconductor device and switching element
A conventional one-chip dual MOSFET has a structure in which two chips are arranged side by side and drain electrodes are short-circuited. Therefore, the mounting area thereof is large, and the resistance between the drain electrodes cannot be reduced. Accordingly, ...
04/18/2006
7015073Method of forming heat spreader with down set leg attachment feature
Numerous embodiments of a heat spreader, comprised of a plurality of downset legs, which provides a simple and lower cost method of forming a heat spreader as compared to conventional methods are disclosed, as well as novel apparatus and methods for attaching the he...
03/21/2006
7001800Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit
A method for manufacturing electrically non-active structures for an electronic circuit integrated on a semiconductor substrate is provided, with the electronic circuit including first and second electrically active structures. The method includes inserting the elec...
02/21/2006
7002247Thermal interposer for thermal management of semiconductor devices
A thermal interposer is provided for attachment to the back surface of a semiconductor device so as to give a very low thermal resistance. In one preferred embodiment, the thermal interposer has two plates containing wick structures such as grooves. The thermal inte...
02/21/2006
6995467Semiconductor component
A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode ...
02/07/2006
6977424Electrically pumped semiconductor active region with a backward diode, for enhancing optical signals
An electrically pumped optical device includes a semiconductor active region and a backward diode. Both of these structures are located in the current path of the optical device, which is oriented primarily vertically. The active region has a finite extent along at ...
12/20/2005
6972443Structure and method of forming a bipolar transistor having a self-aligned raised extrinsic base using link-up region formed from an opening therein
A bipolar transistor is provided which includes a collector region, an intrinsic base layer including a single-crystal semiconductor overlying the collector region, and an emitter disposed within a first opening overlying the intrinsic base layer. The bipolar transi...
12/06/2005
6946686Method of fabricating semiconductor device and semiconductor device
A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are...
09/20/2005
6940720Integrated circuit having a thermally shielded electric resistor trace
An integrated circuit includes an electric resistor trace, a substrate and a thermally conductive structure arranged above or below the electric resistor trace for dissipating heat from the electric resistor trace to the substrate. The present invention is based on ...
09/06/2005
6936868Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer...
08/30/2005
6933606Semiconductor device whose semiconductor chip has chamfered backside surface edges and method of manufacturing the same
A semiconductor element is formed in the major surface of a semiconductor chip. Curved surfaces having a radius of curvature of 0.5 to 50 μm are formed at at least some of edges where the side surfaces and backside surface of the semiconductor chip cross. ...
08/23/2005
6919630Semiconductor package with heat spreader
A semiconductor package with an embedded heat spreader (EHS) is proposed, which can be used for the fabrication of a semiconductor package, such as a FCBGA (Flip-Chip Ball Grid Array) package with a heat spreader, and which is characterized by the provision of a plu...
07/19/2005
6888178Method and system for magnetically assisted statistical assembly of wafers
A wafer having heterostructure therein is formed using a substrate with recesses formed within a dielectric layer. A magnetized magnetic layer or a polarized electret material is formed at the bottom of each recess. The magnetized magnetic layer or a polarized elect...
05/03/2005
6876061Chip scale surface mount package for semiconductor device and process of fabricating the same
A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not ext...
04/05/2005
6861730Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material
A switching chip (101) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (115), an insulating substrate (114) and a conductive plate (108), with a first conductive layer (10...
03/01/2005
6844214Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substanti...
01/18/2005
6831351Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material
A switching chip (101) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (115), an insulating substrate (114) and a conductive plate (108), with a first conductive layer (10...
12/14/2004
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