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3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
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| Number | Title | Issue Date |
| 7405474 | Low cost thermally enhanced semiconductor package In one embodiment, a device is packaged using a low-cost thermally enhanced ball grid array (LCTE-BGA) package. The device may include a die with its backside mounted to the bottom side of a multi-layer packaging substrate. Thermal vias may be formed through the sub... | 07/29/2008 |
| 7231828 | High temperature pressure sensing system A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit includ... | 06/19/2007 |
| 7208751 | Non-volatile semiconductor memory device allowing shrinking of memory cell Dummy cells are disposed in alignment with memory cells arranged in rows and columns in a memory array. The memory cell includes a variable resistance element and a select transistor having a collector connected to a substrate region and selecting the variable resis... | 04/24/2007 |
| 7198992 | Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 04/03/2007 |
| 7196400 | Semiconductor device with enhanced orientation ratio and method of manufacturing same An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a cryst... | 03/27/2007 |
| 7145175 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 12/05/2006 |
| 7119363 | Thin film transistor formed on a transparent substrate A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate elec... | 10/10/2006 |
| 7112545 | Passivation of material using ultra-fast pulsed laser The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer. ... | 09/26/2006 |
| 7098476 | Multilayer interconnect structure containing air gaps and method for making A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. ... | 08/29/2006 |
| 7033872 | Thin film transistor and method of fabricating the same A thin film transistor which can be used in an LCD display panel includes an insulator substrate, a gate electrode located on the insulator substrate, an insulator film provided on the insulator substrate and the gate electrode, and a polycrystalline silicon film lo... | 04/25/2006 |
| 7034336 | Capacitorless 1-transistor DRAM cell and fabrication method The channel region (11) and the source-drain regions (9, 10) are arranged vertically at a sidewall of a dielectric trench filling (4). On the opposite side, the semiconductor material is bounded by the gate dielectric (18) and the gate el... | 04/25/2006 |
| 6930326 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 08/16/2005 |
| 6873055 | Integrated circuit arrangement with field-shaping electrical conductor An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces a magnetic field that acts on at least a further part of the circuit configuration, wherein seen in cross-section, the electrical conductor h... | 03/29/2005 |
| 6818496 | Silicon on insulator DRAM process utilizing both fully and partially depleted devices This invention relates to the field of semiconductor integrated circuits and, particularly to stand-alone and embedded memory chips fabricated on Silicon-on-Insulator (SOI) substrates and devices. Partially depleted (PD) and fully depleted (FD) devices are utilized ... | 11/16/2004 |
| 6812136 | Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide According to the present invention, when a wiring layer using copper is formed, an interlayer insulation film is formed on a semiconductor substrate having a conductive portion of an element. A contact hole, which is connected to at least the conductive portion, is ... | 11/02/2004 |
| 6787804 | Semiconductor acceleration sensor A semiconductor acceleration sensor includesa non-single-crystal-silicon-based substrate, an insulating beam structure having a movable section and a stationary section, at least one piezoresistor positioned on the beam structure, an insulating supporter positioned ... | 09/07/2004 |
| 6734499 | Operation method of semiconductor devices An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is disposed between said gate elect... | 05/11/2004 |
| 6720575 | Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the sub... | 04/13/2004 |
| 6707064 | Test element group structure A semiconductor wafer includes a plurality of chip areas having circuit elements, a scribe line area for defining the chip areas, and a plurality of test element group (TEG) modules. The TEG modules are group formed on the scribe line area. Each of the TEG modules h... | 03/16/2004 |
| 6664566 | Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 12/16/2003 |
| 6600196 | Thin film transistor, and manufacturing method thereof The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14 and a drain electr... | 07/29/2003 |
| 6576925 | Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invention is directed to... | 06/10/2003 |
| 6521991 | Thermoelectric module Connection of the leads for a thermoelectric module is readily accomplished, and after connection, the tensile strength of the connection is enhanced. One ends of the front and back side lead patterns for the thermoelectric module, formed on a support pla... | 02/18/2003 |
| 6448577 | Semiconductor device with grain boundaries A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 Ã… to 4 Î... | 09/10/2002 |
| 6346716 | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 02/12/2002 |
| 6294814 | Cleaved silicon thin film with rough surface A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles ... | 09/25/2001 |
| 6288412 | Thin film transistors for display devices having two polysilicon active layers of different thicknesses A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amor... | 09/11/2001 |
| 6265730 | Thin-film transistor and method of producing the same A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are formed over the tr... | 07/24/2001 |
| 6225667 | Leaky lower interface for reduction of floating body effect in SOI devices A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region provides a "leaky" e... | 05/01/2001 |
| 6184541 | Thin film transistor and method of producing the same On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and th... | 02/06/2001 |
| 6144041 | Semiconductor device having an active layer with no grain boundary A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the... | 11/07/2000 |
| 6140667 | Semiconductor thin film in semiconductor device having grain boundaries To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an ... | 10/31/2000 |
| 6114734 | Transistor structure incorporating a solid deuterium source for gate interface passivation The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for formation of components... | 09/05/2000 |
| 6093937 | Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and an active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-li... | 07/25/2000 |
| 6057557 | Semiconductor substrate semiconductor device and liquid crystal display device A method of forming an Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film forming substrate, ... | 05/02/2000 |
| 6011271 | Semiconductor device and method of fabricating the same In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave secti... | 01/04/2000 |
| 5959312 | Sensor with doped microcrystalline silicon channel leads with bubble formation protection means A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (μc-Si). The sensing element is formed in a semiconductor layer tha... | 09/28/1999 |
| 5959313 | Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is ... | 09/28/1999 |
| 5950067 | Method of fabricating a thermoelectric module A method of fabricating a thermoelectric module in which a plurality of thermoelectric chips are arranged in a matrix between first and second dielectric substrates and electrically connected in series so as to heat one of the substrates and cool the othe... | 09/07/1999 |
| 5923050 | Amorphous silicon TFT An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provi... | 07/13/1999 |
