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| Number | Title | Issue Date |
| 7919777 | Bottom gate thin film transistor and method of manufacturing the same A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bot... | 04/05/2011 |
| 7750347 | Semiconductor device and semiconductor display device A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the memory are constituted by TFTs, and are integrally formed on the same in... | 07/06/2010 |
| 7612375 | Semiconductor device and method for fabricating the same A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline region, including a channel forming region, a source region and a drain re... | 11/03/2009 |
| 7495258 | N-channel TFT and OLED display apparatus and electronic device using the same An N-channel TFT and OLED display apparatus and electronic device using the same are disclosed. The N-channel TFT comprises a a substrate; an active layer on the substrate, wherein the active layer comprises an N type source region and an N type drain region; a gate... | 02/24/2009 |
| 7413940 | Thin-film transistor and fabrication method thereof A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to pattern the four thin films f... | 08/19/2008 |
| 7394097 | Liquid crystal display A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a se... | 07/01/2008 |
| 7375373 | Thin film transistor array panel A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, d... | 05/20/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7359009 | Flat panel display with structure preventing electrode line openings A flat panel display with a structure preventing electrode line openings. The flat panel display includes a substrate, a gate line, an insulating layer, an etching buffer layer, and a data line. The gate line is disposed on the substrate. The insulating layer covers... | 04/15/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7329906 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr... | 02/12/2008 |
| 7312111 | Liquid crystal display panel An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and ... | 12/25/2007 |
| 7268366 | Method of fabricating X-ray detecting device A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating mate... | 09/11/2007 |
| 7268839 | Array substrate comprising an island shaped drain electrode enclosed by the source electrode and liquid crystal display device including the same An array substrate for a liquid crystal display device including a substrate, a gate electrode on the substrate, a first insulating layer on the gate electrode, an active layer on the first insulating layer and corresponding to the gate electrode, a source electrode... | 09/11/2007 |
| 7259035 | Methods of forming thin-film transistor display devices Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the sem... | 08/21/2007 |
| 7247603 | Charge dissipative dielectric for cryogenic devices A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconduc... | 07/24/2007 |
| 7238963 | Self-aligned LDD thin-film transistor and method of fabricating the same A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material t... | 07/03/2007 |
| 7235416 | Method for fabricating polysilicon liquid crystal display device A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist p... | 06/26/2007 |
| 7230256 | Ion doping system, ion doping method and semiconductor device An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source ... | 06/12/2007 |
| 7223666 | Semiconductor device that includes a silicide region that is not in contact with the lightly doped region There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively... | 05/29/2007 |
| 7221092 | Display device having a double sided display panel The invention provides a portable information terminal, such as a notebook PC, including light-emitting elements entirely having longer lives (a double-sided display panel having longer lives) and allowing lower power consumption with a double-sided display panel ha... | 05/22/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7176496 | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gat... | 02/13/2007 |
| 7176993 | Reflection type display device using a light shading film with a light shading material evenly dispersed throughout Among insulating layers for insulating and separating first wiring lines, second wiring lines, and pixel electrodes constituting a reflection type display device, at least one layer is made of an insulating film in which a carbon-based material or a pigment is dispe... | 02/13/2007 |
| 7173278 | Thin-film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electr... | 02/06/2007 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7148542 | Semiconductor device and method of forming the same An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single c... | 12/12/2006 |
| 7148507 | Semiconductor device having thin film transistor with position controlled channel formation region A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowerin... | 12/12/2006 |
| 7145175 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 12/05/2006 |
| 7132685 | Asymmetry thin-film transistor An asymmetry thin-film transistor includes a substrate, a semiconductor layer and a gate positioned on the substrate. The semiconductor layer includes a first lightly doped region and a first heavily doped region adjacent to a first gate side, and a second lightly d... | 11/07/2006 |
| 7115903 | Semiconductor device and semiconductor device producing system An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. ... | 10/03/2006 |
| 7101740 | Electronic devices comprising bottom-gate TFTs and their manufacture A method of manufacturing an electronic device comprising a bottom-gate TFT (12) is provided, the method comprising the steps of: forming a doped amorphous silicon gate layer (26′) on a substrate, the gate layer defining a gate (26), forming a... | 09/05/2006 |
| 7095047 | Semiconductor device and method of manufacturing the same To realize the reduction of a manufacturing cost and the enhancement of yield by reducing the number of steps of a TFT in an electro-optical device typified by an active matrix liquid crystal display device. A semiconductor device of the present invention is charact... | 08/22/2006 |
| 7081646 | Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/d... | 07/25/2006 |
| 7034336 | Capacitorless 1-transistor DRAM cell and fabrication method The channel region (11) and the source-drain regions (9, 10) are arranged vertically at a sidewall of a dielectric trench filling (4). On the opposite side, the semiconductor material is bounded by the gate dielectric (18) and the gate el... | 04/25/2006 |
| 7016003 | In-plane switching liquid crystal display device including common electrode comprising black matrix In a liquid crystal display device which performs image display by controlling a liquid crystal layer by a lateral electric field that is parallel with a substrate, the lateral electric field is formed by a black matrix and a pixel electrode. That is, a common elect... | 03/21/2006 |
| 7009205 | Image display device using transistors each having a polycrystalline semiconductor layer An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity con... | 03/07/2006 |
| 6995047 | Thin film transistor having a short channel formed by using an exposure mask with slits A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the ... | 02/07/2006 |
| 6984848 | Thin film transistor with buffer layer for promoting electron mobility A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into t... | 01/10/2006 |
| 6979840 | Thin film transistors having anodized metal film between the gate wiring and drain wiring A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate... | 12/27/2005 |
