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| Number | Title | Issue Date |
| 7919831 | Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substra... | 04/05/2011 |
| 7898062 | Epitaxial semiconductor layer and method A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor... | 03/01/2011 |
| 7705429 | Epitaxial semiconductor layer and method A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor... | 04/27/2010 |
| 7667298 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plan... | 02/23/2010 |
| 7629670 | Radiation-emitting semi-conductor component In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is ... | 12/08/2009 |
| 7489019 | Epitaxial semiconductor layer and method A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor... | 02/10/2009 |
| 7470970 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate Oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitri... | 12/30/2008 |
| 7327032 | Semiconductor package accomplishing fan-out structure through wire bonding Provided is a semiconductor package accomplishing a fan-out structure through wire bonding in which a pad of a semiconductor chip is connected to a printed circuit board through wire bonding. A semiconductor package can be produced without a molding process and can ... | 02/05/2008 |
| 7288791 | Epitaxial wafer and method for manufacturing method It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film ... | 10/30/2007 |
| 7221037 | Method of manufacturing group III nitride substrate and semiconductor device The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) formi... | 05/22/2007 |
| 7161162 | Electron beam pattern generator with photocathode comprising low work function cesium halide An electron beam pattern generator comprises a laser beam generator to generate a laser beam. A photocathode receives the laser beam and generates one or more electron beams. The photocathode comprises cesium halide material, such as for example, cesium bromide or i... | 01/09/2007 |
| 7126052 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of ... | 10/24/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7012318 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal... | 03/14/2006 |
| 6956884 | Semiconductor light emitting device A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is... | 10/18/2005 |
| 6879012 | Giant planar hall effect in epitaxial ferromagnetic semiconductor devices Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the... | 04/12/2005 |
| 6734515 | Semiconductor light receiving element A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that... | 05/11/2004 |
| 6680497 | Interstitial diffusion barrier A heterojunction bipolar transistor is doped in the sub-collector layer (20) with phosphorus (24). The presence of the phosphorus causes any interstitial gallium (22) to be bonded (26) to the phosphorus (24) and move to a lattice site. The result is that ... | 01/20/2004 |
| 6639327 | Semiconductor member, semiconductor device and manufacturing methods thereof In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member... | 10/28/2003 |
| 6590236 | Semiconductor structure for use with high-frequency signals High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar... | 07/08/2003 |
| 6552414 | Semiconductor device with selectively diffused regions The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source ... | 04/22/2003 |
| 6525349 | Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD A heterojunction bipolar transistor (HBT), having a substrate formed of indium phosphide (InP), and having emitter, base and collector layers formed over the substrate such that the base layer is disposed between the emitter and collector layers. The coll... | 02/25/2003 |
| 6483134 | Integrated circuits with immunity to single event effects The present invention is an electronic structure having a buffer layer with a short average carrier lifetime, at least about 1000 Å thick with an upper face, and an integrated circuit disposed over the upper face of the buffer layer, where this integrate... | 11/19/2002 |
| 6432844 | Implanted conductor and methods of making The present invention is directed toward the formation of implanted thermally and electrically conductive structures in a dielectric. An electrically conductive structure, such as an interconnect is formed through ion implantation into several levels with... | 08/13/2002 |
| 6429471 | Compound semiconductor field effect transistor and method for the fabrication thereof Disclosed is a compound semiconductor field effect transistor. The compound semiconductor field effect transistor has a charge absorption layer and a semiconductor laminated structure. The charge absorption layer includes a compound semiconductor layer of... | 08/06/2002 |
| 6420775 | Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression A compound semiconductor device having improved backgate voltage resistance characteristics. To improve the backgate voltage resistance of a compound semiconductor device having field effect transistors on a main surface of a semi-insulating substrate, bo... | 07/16/2002 |
| 6180269 | GaAs single crystal substrate and epitaxial wafer using the same A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single cr... | 01/30/2001 |
| 6172420 | Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact An ohmic contact including a gallium arsenide substrate having an epitaxially grown crystalline layer of indium arsenide on the substrate. The crystalline material and the substrate define an interface, layers are n-doped with silicon close to the interfa... | 01/09/2001 |
| 6153895 | p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device A p-type semiconductor composed basically of an Ib-IIIb-VIb2 group compound semiconductor (especially CuInS2) which is improved in carrier concentration and has advantages in manufacture and performance. In order to obtain the p-type... | 11/28/2000 |
| 6147364 | Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of Nbg1 cm-3, the single-crystal layer being provided near the substrate an... | 11/14/2000 |
| 6071751 | Deuterium sintering with rapid quenching Channel-hot-carrier reliability can be improved by deuterium sintering. However, the benefits obtained by deuterium sintering can be greatly reduced or destroyed by thermal processing steps which break Si--H and Si--D bonds. A solution is to increase the ... | 06/06/2000 |
| 6002142 | Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneo... | 12/14/1999 |
| 5998674 | Bromine compound production method Method of producing a bromine compound having an aliphatic unsaturated bond which includes reacting a compound having an aliphatic unsaturated bond represented by the following general formula (1) with bromine: R1 --O--Ar1 --Y--Ar2 | 12/07/1999 |
| 5982024 | High concentration doped semiconductor A semiconductor comprising an n-type semiconductor layer 1 with donor impurities added thereto, a semiconductor layer 2 having the value of energy from vacuum level to Fermi level larger than the value of energy from vacuum level to the lower end of the c... | 11/09/1999 |
| 5903017 | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of Nbg1 cm-3, the single-crystal layer being provided near the substrate an... | 05/11/1999 |
| 5844303 | Semiconductor device having improved electronic isolation A semiconductor device includes a buffer layer of AlGaAs that contains oxygen with a concentration level in the approximate range of 8×1017 cm-3 to 6×1019 cm-3, and carbon with a concentration level in the app... | 12/01/1998 |
| 5569953 | Semiconductor device having an isolation region enriched in oxygen A method for growing an epitaxial layer of a group III-V compound semiconductor material that contains oxygen comprises the steps of supplying molecules of an organic compound that contains a group V element and oxygen in the molecule, and decomposing the... | 10/29/1996 |
| 5536953 | Wide bandgap semiconductor device including lightly doped active region A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conducti... | 07/16/1996 |
| 5455429 | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneousl... | 10/03/1995 |
| 5422731 | Semiconductor arrangement made of compound semiconductor material The invention relates to a semiconductor arrangement made of compound semiconductor material and consists in that the semiconductor body contains in areas and, in the case of phosphide compounds throughout its entirety or in areas, isoelectronic impuritie... | 06/06/1995 |
