Quotables
"This is the patent age of new inventions for killing bodies, and for saving souls. All propagated with the best intentions."
Lord Byron ;
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7521774 | Semiconductor diode and method for the production thereof In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a com... | 04/21/2009 |
| 7361942 | Transient voltage suppression device A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coup... | 04/22/2008 |
| 7312128 | Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo... | 12/25/2007 |
| 7279773 | Protection device for handling energy transients A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diode... | 10/09/2007 |
| 7259411 | Vertical MOS transistor A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. Th... | 08/21/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7091604 | Three dimensional integrated circuits A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more elec... | 08/15/2006 |
| 6977195 | Test structure for characterizing junction leakage current For characterizing bulk leakage current of a junction, a center junction surrounded by an isolation structure is formed with a first depth. In addition, at least one periphery junction having a second depth greater than the first depth is formed in a portion of the ... | 12/20/2005 |
| 6947613 | Wavelength selective switch and equalizer A device comprising a light modulator including a plurality of elements wherein each element is selectively operable such that the plurality of elements are dynamically configurable to combine selected ones of a plurality of grating periods such that selected portio... | 09/20/2005 |
| 6936868 | Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer... | 08/30/2005 |
| 6936907 | Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity This invention provides a method or an auxiliary method to implement optimum variation lateral flux on a semiconductor surface. The method is to cover one or more thin films of high permittivity dielectric material on the semiconductor surface. The one or more films... | 08/30/2005 |
| 6867436 | Transient voltage suppression device A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coup... | 03/15/2005 |
| 6815799 | Semiconductor integrated circuit device A semiconductor integrated circuit device with built-in spark killer diodes suitable for output transistor protection has a problem such that a leakage current to the substrate is great and a desirable forward current cannot be obtained. In a semiconductor integrate... | 11/09/2004 |
| 6803644 | Semiconductor integrated circuit device and method of manufacturing the same A plurality of connection holes 24 for connecting n+ type semiconductor region 20 of zener diodes (D1, D2) and wires 21 and 22 to each other are not arranged in the center of the n+ type semicon... | 10/12/2004 |
| 6784520 | Semiconductor devices constitute constant voltage devices used to raise internal voltage A constant voltage device includes n-type and p-type doped layers. The n-type doped layer is formed by heavily doping with an n-type impurity an upper portion of a p-type silicon semiconductor substrate, in an active region defined by an isolating insulator film. Th... | 08/31/2004 |
| 6734515 | Semiconductor light receiving element A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that... | 05/11/2004 |
| 6730979 | Recessed p-type region cap layer avalanche photodiode A recessed p-type region cap layer avalanche photodiode (12) is provided. The photodiode (12) includes a semiconductor substrate (30) and a semiconductor stack (32), which is electrically coupled to the substrate (30). A cap layer ... | 05/04/2004 |
| 6706606 | Buried zener diode structure and method of manufacture A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface. ... | 03/16/2004 |
| 6639301 | Semiconductor device and manufacturing method thereof A semiconductor device embraces an n-type first semiconductor region, defined by first and second end surfaces and a first outer surface connecting the first and second end surfaces; a p-type second semiconductor region, defined by third and fourth end su... | 10/28/2003 |
| 6605859 | Buried Zener diode structure and method of manufacture A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.... | 08/12/2003 |
| 6590273 | Semiconductor integrated circuit device and manufacturing method thereof In the semiconductor integrated circuit device, a first P+ type buried layer formed as an anode region and an N+ type diffused region formed in a cathode region are spaced from each other in the direction of the depth. This makes it ... | 07/08/2003 |
| 6552413 | Diode Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage has a great value. An N layer 101 and a P layer 102 are for... | 04/22/2003 |
| 6531744 | Integrated circuit provided with overvoltage protection and method for manufacture thereof The invention concerns an integrated circuit, including a substrate (SBSTR) with sub-circuits provided with a number of terminals, including a substrate terminal or earthing point (GND), a Vcc power supply terminal, an input point (in) and an o... | 03/11/2003 |
| 6495863 | Semiconductor device having diode for input protection circuit of MOS structure device An insulator film provided on a region for arranging a Zener diode has a plurality of groove portions successively arranged in a direction D1 of extension of each semiconductor region forming the diode. Each groove potion extends in a width direction D2 o... | 12/17/2002 |
| 6410950 | Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode A pin diode includes an inner zone, a cathode zone and an anode zone. A boundary surface between the inner zone and the anode zone is at least partly curved and/or at least one floating region having the same conduction type and a higher dopant concentrat... | 06/25/2002 |
| 6075276 | ESD protection device using Zener diodes A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type semiconductor substrate, a first conductivity type anode ... | 06/13/2000 |
| 6051457 | Method for fabricating electrostatic discharge protection device An integrated circuit with a passive component and an ESD device in accordance with the present invention has: a P substrate; an N+ buried layer implanted in the P substrate; a cathode coupled to the N+ buried layer with an N area formed between the catho... | 04/18/2000 |
| 5986327 | Bipolar type diode A base region is formed at a shallow junction and an impurity region of higher impurity concentration is formed, by a separate step, as a buried layer at a predetermined distance from the surface of a semiconductor substrate. By so doing, a bipolar diode ... | 11/16/1999 |
| 5883414 | Electrostatic discharge protection device An integrated circuit with a passive component and an ESD device in accordance with the present invention has: a P substrate; an N+ buried layer implanted in the P substrate; a cathode coupled to the N+ buried layer with an N area formed between the catho... | 03/16/1999 |
| 5869882 | Zener diode structure with high reverse breakdown voltage A zener diode capable of breakdown at much higher voltages than in the prior art is fabricated by providing a semiconductor substrate of a first conductivity type having an opposite conductivity type first tank disposed therein. The first tank includes re... | 02/09/1999 |
| 5834823 | Transistor with constant voltage diode A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region o... | 11/10/1998 |
| 5757057 | Large area avalanche photodiode array A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode th... | 05/26/1998 |
| 5691558 | Drift-free avalanche breakdown diode An avalanche breakdown diode includes a p-doped trough in which a highly p-doped region is introduced. In addition to the trough, an n-doped region is introduced, which is underlaid by a p-doped layer. The trough and the p-doped layer define a precisely e... | 11/25/1997 |
| 5612568 | Low-noise zener diode A low-noise Zener diode that enables to improve the surge resistance performance without degeneration of its low-noise characteristic is provided. The diode contains a semiconductor substrate of a first conductivity type and a first impurity doped region ... | 03/18/1997 |
| 5608244 | Semiconductor diode with reduced recovery current A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N- body (2). A P- layer (4a) is disposed in the top portion of the N- body... | 03/04/1997 |
| 5594266 | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage An ESD protective clamp device comprised of a two-terminal diode formed in an isolated chip cell. The lower part of this chip cell region contains a buried layer of silicon with P-type dopant, and the upper part is an epitaxial layer also with P-type dopa... | 01/14/1997 |
| 5554882 | Integrated trigger injector for avalanche semiconductor switch devices An avalanche semiconductor switch device utilizes trigger input. The integrated trigger input is a charge carrier injector which injects charge carriers directly into the avalanche semiconductor switch device. The avalanche semiconductor switch device inc... | 09/10/1996 |
| 5477078 | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage An ESD protective clamp device comprised of a two-terminal diode formed in an isolated chip cell. The lower part of this chip cell region contains a buried layer of silicon with P-type dopant, and the upper part is an epitaxial layer also with P-type dopa... | 12/19/1995 |
| 5468673 | Avalanche diode incorporated in a bipolar integrated circuit A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of... | 11/21/1995 |
| 5414295 | Avalance diode incorporated in a bipolar integrated circuit A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of... | 05/09/1995 |
