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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7326062 | System and method for increasing the surface mounting stability of a lamp In one embodiment, an LED is constructed with its entire contact structure stamped and inserted into the molded lamp as a single structure. A portion of the contact structure is imbedded in the molded lamp such that the bottom surface of the contacts do not extend b... | 02/05/2008 |
| 7326953 | Layer sequence for Gunn diode The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs layer (5), which is placed upon the first h... | 02/05/2008 |
| 7279373 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 10/09/2007 |
| 7271042 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 09/18/2007 |
| 7203031 | Substrate for thin-film magnetic head and method of manufacturing the substrate A substrate for a thin-film magnetic head includes a ceramic base and an undercoat film of amorphous SiC, which is supported on the ceramic base. ... | 04/10/2007 |
| 7115449 | Method for fabrication of polycrystalline silicon thin film transistors The present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The... | 10/03/2006 |
| 7109917 | Intergrated semiconductor component for high-frequency measurement and use thereof It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured l... | 09/19/2006 |
| 6936868 | Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer... | 08/30/2005 |
| 6909163 | High-frequency oscillator for an integrated semiconductor circuit and the use thereof A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structure... | 06/21/2005 |
| 6855587 | Gate-controlled, negative resistance diode device using band-to-band tunneling A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emitter region ... | 02/15/2005 |
| 6774460 | IMPATT diodes The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region, with a bandgap narrower than the bandgap in the avalanche region, is loc... | 08/10/2004 |
| 6762494 | Electronic package substrate with an upper dielectric layer covering high speed signal traces An electronic package component includes a flip-chip device mounted to a BGA substrate. The BGA substrate includes conductive traces formed on its upper surface and configured in a coplanar waveguide structure. The package includes a dielectric coating applied over ... | 07/13/2004 |
| 6759744 | Electronic circuit unit suitable for miniaturization The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements formed on the surfaces of the first and second insulating substrates in a... | 07/06/2004 |
| 6734515 | Semiconductor light receiving element A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that... | 05/11/2004 |
| 6686647 | Gunn diode and method of manufacturing the same Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active laye... | 02/03/2004 |
| 6653668 | Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe... | 11/25/2003 |
| 6605859 | Buried Zener diode structure and method of manufacture A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.... | 08/12/2003 |
| 6552413 | Diode Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage has a great value. An N layer 101 and a P layer 102 are for... | 04/22/2003 |
| 6531744 | Integrated circuit provided with overvoltage protection and method for manufacture thereof The invention concerns an integrated circuit, including a substrate (SBSTR) with sub-circuits provided with a number of terminals, including a substrate terminal or earthing point (GND), a Vcc power supply terminal, an input point (in) and an o... | 03/11/2003 |
| 6495863 | Semiconductor device having diode for input protection circuit of MOS structure device An insulator film provided on a region for arranging a Zener diode has a plurality of groove portions successively arranged in a direction D1 of extension of each semiconductor region forming the diode. Each groove potion extends in a width direction D2 o... | 12/17/2002 |
| 6380623 | Microcircuit assembly having dual-path grounding and negative self-bias A microwave-frequency microcircuit assembly includes an integrated circuit structure having a circuit ground. A support structure includes a grounded metallic carrier, and a dielectric substrate having a top surface, a bottom surface contacting the carrie... | 04/30/2002 |
| 6366770 | High-frequency semiconductor device and radio transmitter/receiver device A high-frequency semiconductor device includes a microwave monolithic integrated circuit having first and second passive element sections each having at least one passive element as well as an FET. The FET has a gate connected to the first passive element... | 04/02/2002 |
| 6252250 | High power impatt diode In a high power IMPATT ( Impact Avalanche Transit Time) diode for generating high frequency signals two electrodes, anode (2) and cathode (1), are arranged with a semiconductor layer therebetween. Said semiconductor layer comprises a drift layer (7) for t... | 06/26/2001 |
| 6057593 | Hybrid high-power microwave-frequency integrated circuit In a power microwave hybrid integrated circuit, a depth of recesses (2) in a metal base (1) is selected so that a face surface of chips (3) and a metal base (1) are coplanar, a dielectric board (5) has a shield ground metallization (10) on its back side a... | 05/02/2000 |
| 6040617 | Structure to provide junction breakdown stability for deep trench devices The present invention is directed to an improved deep trench structure, for use in junction devices, which addresses junction breakdown voltage instabilities of the prior art. The primary, or metallurgical, junction where avalanche breakdown occurs is mov... | 03/21/2000 |
| 6023080 | Input/output connection structure of a semiconductor device A semiconductor device comprises a dielectric substrate formed on a metal carrier, a semiconductor chip formed on the dielectric substrate and having a first electrode, a microstrip line formed on the dielectric substrate and having a second electrode to ... | 02/08/2000 |
| 6002147 | Hybrid microwave-frequency integrated circuit The microwave hybrid integrated circuit comprises a dielectric board (1) provided with a topological metallization pattern (2) on its face side, a shield grounding metallization (3) on the back side thereof, a hole (4), and a metal base (5) having a proje... | 12/14/1999 |
| 5986331 | Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate A microwave monolithic integrated circuit includes a coplanar waveguide (CPW) formed by a composite silicon structure constituted by a relatively high resistivity substrate, a first oxide layer on the upper surface thereof, a relatively thin silicon layer... | 11/16/1999 |
| 5977611 | Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode A Read diode includes an inner zone, a cathode zone, an anode zone and a first coupling zone disposed between the inner zone and the anode zone. A second coupling zone is disposed between the first coupling zone and the inner zone. Both coupling zones are... | 11/02/1999 |
| 5917227 | Light-emitting-diode array and light-emitting-diode element A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-dope... | 06/29/1999 |
| 5512776 | Interdigitated IMPATT devices A monolithic circuit including an IMPATT with the IMPATT formed as a plurality of parallel vertical fingers or an array of vertical mesas having a common doped region to apread the area for heat dissipation through the substrate.... | 04/30/1996 |
| 5466965 | High efficiency, high power multiquantum well IMPATT device with optical injection locking Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide heterojunctions are used to provide a high power, high frequency, high efficiency device operating at 50 GHz... | 11/14/1995 |
| 5449953 | Monolithic microwave integrated circuit on high resistivity silicon A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX™, is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistiv... | 09/12/1995 |
| 5436499 | High performance gaas devices and method High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical ... | 07/25/1995 |
| 5373186 | Bipolar transistor with monoatomic base layer between emitter and collector layers A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type l... | 12/13/1994 |
| 5329150 | Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth laye... | 07/12/1994 |
| 5276350 | Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped regio... | 01/04/1994 |
| 5243199 | High frequency device Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high freq... | 09/07/1993 |
| 5216260 | Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separa... | 06/01/1993 |
