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| Number | Title | Issue Date |
| 8188572 | Integrated semiconductor device In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance. ... | 05/29/2012 |
| 8143701 | Method of forming a high capacitance diode and structure therefor In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device. ... | 03/27/2012 |
| 8026576 | Wiring board There is provided a wiring board. The wiring board includes: a semiconductor substrate having a through hole and covered with an insulating film; a through electrode formed in the through hole; a first wiring connected to one end of the through electrode; and a seco... | 09/27/2011 |
| 7859083 | Semiconductor device A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped ... | 12/28/2010 |
| 7750439 | ESD protection device An ESD protection device includes: a semiconductor substrate of a first conductivity type having a first major surface and a second major surface; a signal input electrode formed on the first major surface of the semiconductor substrate; a base region of a second co... | 07/06/2010 |
| 7638857 | Structure of silicon controlled rectifier A silicon controlled rectifier structure is provided in a substrate having a first conductive type. A well region formed within the substrate has a second conductive type. A first dopant region formed within the substrate and the well region has the first conductive... | 12/29/2009 |
| 7635909 | Semiconductor diode and IGBT A semiconductor diode has an anode, a cathode and a semiconductor volume provided between anode and cathode. A plurality of semiconductor zones are formed in the semiconductor volume, which semiconductor zones are inversely doped with respect to their immediate surr... | 12/22/2009 |
| 7485947 | Zener diode and method for production thereof A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that decrease as the N-doped region and the P-doped region approach the P... | 02/03/2009 |
| 7439482 | Automatic avalanche photodiode bias setting system based on unity-gain noise measurement A system for setting the bias of a device. The novel bias setting system includes a first system for determining a ratio between noise at an operating gain of the device and noise at a reference gain of the device, and a second system for adjusting the bias until th... | 10/21/2008 |
| 7436002 | Surface-mountable radiation-emitting component A radiation-emitting surface-mountable component has a light-emitting diode chip mounted on a leadframe. A molding material encapsulates the leadframe and the light-emitting diode chip. ... | 10/14/2008 |
| 7427741 | Bias control apparatus for avalanche photodiode and optical apparatus utilizing the bias control apparatus An apparatus is provided with a biasing unit supplying a bias signal to a first avalanche photodiode and a second avalanche photodiode, the bias signal having a first level and a second level, the first level causing a multiplying effect and the second level causing... | 09/23/2008 |
| 7423859 | System for protecting computer equipment from lightning voltage surges An apparatus for protecting electronic equipment from voltage surges includes a network interface coupled to a computer device for connecting the computer device to a computer network and a discrete voltage surge protection device coupled to the computer network wit... | 09/09/2008 |
| 7361942 | Transient voltage suppression device A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coup... | 04/22/2008 |
| 7312509 | Digital temperature sensing device using temperature depending characteristic of contact resistance A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self... | 12/25/2007 |
| 7279399 | Method of forming isolated pocket in a semiconductor substrate A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 10/09/2007 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7265422 | Low voltage trigger and save area electrostatic discharge device Techniques for ESD protection are provided. An ESD protection device includes a first well region and a second well region disposed in a semiconductor substrate, with an isolation region therebetween. N+ implant regions are disposed in the second well region and are... | 09/04/2007 |
| 7265434 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 09/04/2007 |
| 7227204 | Structure for improved diode ideality A device is provided which includes a single-crystal semiconductor region disposed in a substrate. The single-crystal region includes a first semiconductor material and a diode disposed in the single-crystal region. The diode includes an anode region including a fir... | 06/05/2007 |
| 7211863 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 05/01/2007 |
| 7202536 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 04/10/2007 |
| 7199403 | Semiconductor arrangement having a MOSFET structure and a zener device The invention relates to a semiconductor arrangement having a MOSFET structure and an active zener function. A n+-doped zone and a p+-doped zone are provided at the bottom of a trench for the purpose of forming zener diodes, the n+-d... | 04/03/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7170104 | Arrangement with p-doped and n-doped semiconductor layers and method for producing the same An arrangement having p-doped semiconductor layers and n-doped semiconductor layers which exhibits transitions between the p-doped semiconductor layers and n-doped semiconductor layers, the transitions displaying a Zener breakdown upon application of a voltage chara... | 01/30/2007 |
| 7166875 | Vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the d... | 01/23/2007 |
| 7135738 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 11/14/2006 |
| 7091572 | Fast recovery diode with a single large area p/n junction A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periph... | 08/15/2006 |
| 7078783 | Vertical unipolar component A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth bein... | 07/18/2006 |
| 7071537 | Power device having electrodes on a top surface thereof A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first ele... | 07/04/2006 |
| 7066887 | Bi-plane ultrasonic probe Ultrasonic probe devices are provided which are particularly suitable for use as invasive imaging probes such as endocavity probes and endoscopic probes. The probe devices include a dual cross-scanning bi-plane array transducer formed by a pair of orthogonal, inters... | 06/27/2006 |
| 7038248 | Diverse band gap energy level semiconductor device Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof. ... | 05/02/2006 |
| 7027277 | High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry including a self-triggering device having a blocking junction with a two-dimensional geometrical lateral profile. ... | 04/11/2006 |
| 7023029 | Complementary vertical SCRs for SOI and triple well processes In an ESD protection device using a SCR-like structure, a vertical device is provided that is highly robust and easily allows the triggering voltage to be adjusted during manufacture. Furthermore it is implementable in complementary form based on PNP and NPN BJT str... | 04/04/2006 |
| 7019379 | Semiconductor device comprising voltage regulator element A semiconductor device includes a heavily doped layer 25 of p-type formed in the surface of an n-type well 21, an intermediately doped layer 26 of p-type formed to adjoin and surround the heavily p-doped layer 25, and an isolation region ... | 03/28/2006 |
| 7012276 | Organic thin film Zener diodes A thin film Zener diode, comprising: (a) a thin film comprised of at least one layer including at least one organic material; and (b) first and second electrodes in contact with respective opposite sides of the thi... | 03/14/2006 |
| 7012308 | Diode A diode which eliminates generation of local avalanche breakdown phenomenon when static surges in the backward direction are applied and withstands electrostatic breakdown. A P-type impurity diffused region of high concentration as an anode and an N-type impurity di... | 03/14/2006 |
| 6979908 | Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements A described embodiment of the present invention includes an integrated circuit having a plurality of I/O modules. The I/O modules include a bond pad formed on a substrate. The I/O modules also include an electrostatic discharge device formed in the substrate. The el... | 12/27/2005 |
| 6969891 | Device providing protection against electrostatic discharges for microelectronic components on a SOI-type substrate A device for the protection of an electronic component against electrostatic discharges. The device is made in a semiconducting layer of a substrate. The semiconducting layer covers an insulating layer. The device is connected to a contact pin to protect the electri... | 11/29/2005 |
| 6949815 | Semiconductor device with decoupling capacitors mounted on conductors A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and ... | 09/27/2005 |
| 6936868 | Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer... | 08/30/2005 |
