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| Number | Title | Issue Date |
| 7432528 | TFD LCD panel Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitt... | 10/07/2008 |
| 7391005 | Direct attach optical receiver module and method of testing A direct attach optical receiver module and a system and method for testing the direct attach optical receiver module are provided. An optical receiver module may include an optical detector and an integrated circuit with an integrated amplifier circuit and at least... | 06/24/2008 |
| 7388275 | Electronic package with integrated capacitor Generally provided is a circuit assembly construction for controlling impedance in an electronic package. A large scale, parallel-plate capacitor includes two electrodes separated by a dielectric material. The electrodes serve as reference voltage planes for the ele... | 06/17/2008 |
| 7388247 | High precision microelectromechanical capacitor with programmable voltage source A high precision microelectromechanical capacitor with programmable voltage source includes a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance val... | 06/17/2008 |
| 7345354 | Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity type, respectively. A conductive region in the well has a same conduc... | 03/18/2008 |
| 7319553 | Optical modulator module package structure Disclosed herein is an optical modulator module package structure. In the optical modulator module package structure, an optical modulator device and a drive integrated circuit device are flip-chip bonded to a substrate, and an opening of the substrate is blocked us... | 01/15/2008 |
| 7294895 | Capacitive dynamic quantity sensor and semiconductor device A capacitive dynamic quantity sensor whose size is small and whose reliability and mass productivity are high is provided. In order to realize signal transmission from a lower electrode to an upper electrode, silicon columns which are electrically isolated from one ... | 11/13/2007 |
| 7253073 | Structure and method for hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 08/07/2007 |
| 7202567 | Semiconductor device and manufacturing method for the same A lower interconnection is provided on a semiconductor substrate. A MIM capacitive element is provided on a first interlayer insulation film in which the lower interconnection is buried, and includes a lower electrode, an upper electrode, and a dielectric film sandw... | 04/10/2007 |
| 7196000 | Method for manufacturing a wafer level chip scale package A semiconductor wafer with semiconductor chips having chip pads and a passivation layer is provided. First and second dielectric layers are sequentially formed on the passivation layer. The first and second dielectric layers form a ball pad area that includes an emb... | 03/27/2007 |
| 7183628 | Structure and method of hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 02/27/2007 |
| 7132723 | Micro electro-mechanical system device with piezoelectric thin film actuator A radio frequency (RF) micro electro-mechanical system (MEMS) device and method of making same are provided, the device including an RF circuit substrate and an RF conducting path disposed on the RF circuit substrate, a piezoelectric thin film actuator, and a conduc... | 11/07/2006 |
| 7053462 | Planarization of metal container structures A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. ... | 05/30/2006 |
| 7030463 | Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method produc... | 04/18/2006 |
| 6980412 | Variable tunable range MEMS capacitor The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. T... | 12/27/2005 |
| 6885079 | Methods and configuration to simplify connections between polysilicon layer and diffusion area An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting the diffusion area. The electronic device further includes a conducti... | 04/26/2005 |
| 6835977 | Variable capactor structure A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped... | 12/28/2004 |
| 6787882 | Semiconductor varactor diode with doped heterojunction A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The b... | 09/07/2004 |
| 6762482 | Memory device with composite contact plug and method for manufacturing the same A memory device with composite contact plug and method for manufacturing the same. The composite contact plug comprises a first insulating layer deposited on a semiconductor substrate. A contact hole is formed to penetrate through the first insulation layer. A barri... | 07/13/2004 |
| 6717238 | Low-capacitance bonding pad for semiconductor device A low-capacitance bonding pad for a semiconductor device. A diffusion region is formed in a substrate, and a bonding pad is formed on the substrate and aligned with the diffusion region. The bonding pad is made from a stacked metal layer and a metal layer. The stack... | 04/06/2004 |
| 6661069 | Micro-electromechanical varactor with enhanced tuning range A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the... | 12/09/2003 |
| 6605854 | Schottky diode with bump electrodes The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p- -type conductive type, after a hyper-abrupt p+ n+ junction of a p+ -type diffusion layer, an n | 08/12/2003 |
| 6583486 | Semiconductor memory device and its method of manufacture A semiconductor memory device comprises a semiconductor substrate having a memory cell region and a periphery circuit region. The memory cell region includes first and second conductivity type wells and an array of memory cell formed on the first and seco... | 06/24/2003 |
| 6512281 | Method of forming a semiconductor device and an improved deposition system A method of forming a multi-layer structure over an insulating layer comprises the steps of: selectively depositing a barrier layer on a predetermined region of an insulating layer by use of a first deposition mask; selectively depositing a metal seed lay... | 01/28/2003 |
| 6377440 | Dielectric varactors with offset two-layer electrodes A varactor comprising a substrate, a first conductor positioned on a surface of the substrate, a second conductor positioned on the surface of the substrate forming a gap between the first and second conductors, a tunable dielectric material positioned on... | 04/23/2002 |
| 6362510 | Semiconductor topography having improved active device isolation and reduced dopant migration A method for fabricating an integrated circuit is presented wherein a semiconductor substrate is provided having a dielectric layer formed on its upper surface. A groove is formed in the dielectric layer that extends from the upper surface of the semicond... | 03/26/2002 |
| 6320268 | Power semiconductor module A power semiconductor module in which at least one semiconductor chip with which contact is made by pressure is electrically connected via a contact element to a main connection. The contact element has two planar contact surfaces, between which a spring ... | 11/20/2001 |
| 5825075 | Variable capacitance diode device and method of manufacturing same When a variable capacitance diode device is formed on each of chips obtained by cutting off a wafer, the capacitance values of the diode devices formed on the chips disperse for each wafer due to change in the manufacturing process conditions. To reduced ... | 10/20/1998 |
| 5640042 | Thin film ferroelectric varactor A voltage-variable ceramic capacitance device which has a plurality of las in a matching lattice structure and which possesses a symmetric voltage characteristic and a determinable voltage breakdown and has a high resistance to overbiasing or reverse bia... | 06/17/1997 |
| 5220193 | Variable-capacitance diode device with common electrode A plurality of variable-capacitance diode elements are formed in the top of a semiconductor substrate. The rear surface of the substrate is connected to a first lead frame that acts as a common electrode for one electrode from each of the variable-capacit... | 06/15/1993 |
| 4502023 | Method of fabricating a varactor/oscillator diode module for a tunable oscillator In a method of fabrication of a module formed by a semiconductor diode which oscillates in millimeter waves and by a variable-capacitance diode, the oscillating diode is mounted on a pedestal at the center of a support base. A ring of fused silica for sup... | 02/26/1985 |
| 4282490 | Pulse count type FM demodulator circuit Disclosed is a demodulator circuit which comprises a limiter circuit, a differentiation circuit, a monostable multivibrator circuit and an integration circuit. The differentiation circuit is composed of a delay circuit and a differential logic circuit. Th... | 08/04/1981 |
| 4191899 | Voltage variable integrated circuit capacitor and bootstrap driver circuit An integrated circuit junction capacitor is formed using conventional bipolar transistor technology. Voltage variable capacitance is provided by a reverse biased emitter-base junction and parasitic collector-base capacitance is isolated from the emitter-b... | 03/04/1980 |
| 4097829 | Thermoelectric compensation for voltage control devices A tuning compensation device to reduce post-tuning frequency drift in voltage controlled oscillators, comprising a thermoelectric element, such as a wafer of doped semiconductor material, in contact with the junction of a tuning element, such as a varacto... | 06/27/1978 |
| 4023053 | Variable capacity diode device A semiconductor chip including at least three variable capacity diodes for use at a frequency of 30 to 300 megaherzs is mounted on a grounding member so as to be sealed within a package. A plurality of external connection conductors each coupled to the di... | 05/10/1977 |
| 3956026 | Making a deep diode varactor by thermal migration A varactor has a lamellar structure of a plurality of abutting regions of alternate and opposite type conductivity. The structure is produced by thermal gradient zone melting processing.... | 05/11/1976 |
| 3956024 | Process for making a semiconductor varistor embodying a lamellar structure A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of metal by a temperature gradient zone melting process to form a plurality of alternate regions of opposite type conductivity in ... | 05/11/1976 |
| 3945029 | Semiconductor diode with layers of different but related resistivities The semiconductor junction of a diode is made up of p- and n-type layers, said layers having substantially different resistivities. The thickness of the layer with a greater resistivity does not exceed that of the space charge when a reverse bias voltage,... | 03/16/1976 |
