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| Number | Title | Issue Date |
| 8089137 | Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method A memory device includes a diode driver and a data storage element, such as an element comprising phase change memory material, and in which the diode driver comprises a silicide element on a silicon substrate with a single crystal silicon node on the silicide eleme... | 01/03/2012 |
| 7968973 | Semiconductor for macro and micro frequency tuning, and antenna and frequency tuning circuit having the semiconductor A semiconductor element for macro and micro frequency tuning, and an antenna and a frequency tuning circuit having the semiconductor element, are provided. The semiconductor element includes first and second semiconductors which have a same polarity, a third semicon... | 06/28/2011 |
| 7692270 | Ferroelectric varactors suitable for capacitive shunt switching A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate ... | 04/06/2010 |
| 7692271 | Differential junction varactor Structure and methods for a differential junction varactor. The structure includes: a silicon first region formed in a silicon substrate, the first region of a first dopant type; and a plurality of silicon second regions in physical and electrical contact with the f... | 04/06/2010 |
| 7550820 | Reverse-biased PN diode decoupling capacitor This invention discloses a decoupling capacitor in an integrated circuit, comprising a plurality of dedicated PN diodes with a total junction area greater than one tenth of a total active area of functional devices for which the dedicated PN diodes are intended to p... | 06/23/2009 |
| 7423859 | System for protecting computer equipment from lightning voltage surges An apparatus for protecting electronic equipment from voltage surges includes a network interface coupled to a computer device for connecting the computer device to a computer network and a discrete voltage surge protection device coupled to the computer network wit... | 09/09/2008 |
| 7364565 | Controlled enzymatic removal and retrieval of cells Method and device, including a uniquely operative applicator, and pharmaceutical compositions, for the controlled, non-surgical removal and retrieval of cells from a variety of skin lesions and tissue surfaces are disclosed. A synergistic effect of proteolytic diges... | 04/29/2008 |
| 7361978 | Laser diode packaging A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second sid... | 04/22/2008 |
| 7358823 | Programmable capacitors and methods of using the same In a first aspect, a first method of adjusting capacitance of a semiconductor device is provided. The first method includes the steps of (1) providing a transistor including a dielectric material having a dielectric constant of about 3.9 to about 25, wherein the tra... | 04/15/2008 |
| 7358599 | Optical semiconductor device having a lead frame and electronic equipment using same An optical semiconductor device 1a includes a lead frame 4 having an aperture 7, a submount 8 disposed on one surface of the lead frame 4 to close the aperture 7, a semiconductor optical element 3 which has an ... | 04/15/2008 |
| 7339200 | Light-emitting diode and vehicular lamp A light-emitting diode including a curved surface portion 14aA formed in the front face of a sealing member 14 with the cross-sectional shape of the curved surface portion being in the shape of an undulating curve that has a concave curve C1 | 03/04/2008 |
| 7259418 | Semiconductor device including a MISFET and a MIS capacitor A semiconductor device comprises varactor regions Va and transistor regions Tr. An active region for a varactor is formed with a substrate contact impurity diffusion region obtained by doping an N well region with N-type impurity at a relatively high concentration. ... | 08/21/2007 |
| 7211875 | Voltage-controlled capacitive element and semiconductor integrated circuit An N well is disposed in the upper surface of a P type substrate, a gate insulating film and a gate electrode are disposed thereon, and the gate electrode is connected to a gate terminal. Two p+ diffusion regions are placed in two areas in the surface of ... | 05/01/2007 |
| 7186611 | High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs... | 03/06/2007 |
| 7187012 | Device for protecting I/O lines using PIN or NIP conducting low capacitance transient voltage suppressors and steering diodes A device for protecting I/O lines using low capacitance steering diodes (1200) and PIN or NIP diodes (1202), (1203) is disclosed. A low capacitance diode arrangement configured as steering diodes protect a signal line or input/output (I/O) port ... | 03/06/2007 |
| 7183588 | Light emission device A light emission device. A lead frame comprises a first lead frame segment and a second lead frame segment. A light source is coupled to the first lead frame segment. A wire bond is coupled to the light source and coupled to the second lead frame segment. A transluc... | 02/27/2007 |
| 7170919 | Diode-pumped solid-state laser gain module A laser gain device (10) holds a laser slab (60) which is pumped by pump energy from at least one diode array assembly (24). An angle at which pump energy from the diode array assembly (24) impinges the laser slab (60) is adjustabl... | 01/30/2007 |
| 7112835 | Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1... | 09/26/2006 |
| 7071811 | High performance voltage control diffusion resistor The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains a first and second contact region. These contact regions extend downward from the surface of the substrate. A third c... | 07/04/2006 |
| 7060515 | Method of manufacturing a laser diode package A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second sid... | 06/13/2006 |
| 7019384 | Integrated, tunable capacitance device An integrated, tunable capacitance device includes a semiconductor region, which is, preferably, N-doped, formed in a semiconductor body, having an insulating thick oxide region, which areally adjoins the main side of the semiconductor body, and having a thin oxide ... | 03/28/2006 |
| 6967356 | Vertical component with high-voltage strength The invention concerns a vertical component with a four-layered structure comprising a thick lightly-doped zone (1) of a first type of conductivity providing the component voltage strength, enclosed with a peripheral wall (2) of a second type of conduc... | 11/22/2005 |
| 6963087 | Pulsed bistable bidirectional electronic switch The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a metallization connected to earth. Said circuit comprises a... | 11/08/2005 |
| 6956249 | Termination of semiconductor components The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, ... | 10/18/2005 |
| 6922422 | Heat isolation and dissipation structures for optical components in photonic integrated circuits (PICs) and an optical transport network using the same Photonic integrated circuits (PIC) semiconductor chips are provided with thermal isolation and/or heat dissipation structures between integrated optical components in the PIC chip, particularly integrated active optical components. These structures may also serve as... | 07/26/2005 |
| 6914319 | Semiconductor device having a fuse A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse element made of refractive metal and bridging the fuse terminals. The fuse... | 07/05/2005 |
| 6867478 | Semiconductor device having improved alignment of an electrode terminal on a semiconductor chip and a conductor coupled to the electrode terminal A semiconductor device manufacturing method is used for packaging a thin semiconductor chip in an economical manner. A semiconductor chip having one electrode terminal, a first member having a first conductor on its surface, and a second member having a second condu... | 03/15/2005 |
| 6847095 | Variable reactor (varactor) with engineered capacitance-voltage characteristics In one embodiment, a varactor includes a first node and a second node. The varactor includes: at least one first varactor element including a source, a drain, and a p-type doped gate; at least one second varactor element including a source, a drain, and an n-type do... | 01/25/2005 |
| 6842094 | Electronic component containing capacitance diodes, having different capacitance ranges, and circuit configuration containing the component An electronic component has at least a first diode and a second diode that are capacitance diodes. The characteristic curve of the second diode has a fixed, known relationship to that of the first diode. For example, the first diode and the second diode can have an ... | 01/11/2005 |
| 6818927 | Sensitive high bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary ver... | 11/16/2004 |
| 6787882 | Semiconductor varactor diode with doped heterojunction A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The b... | 09/07/2004 |
| 6710424 | RF chipset architecture A set of radio frequency (RF) integrated circuits includes a transmit chip having a power amplifier and a receive chip adapted to work with the transmit chip. The receive chip has one or more low noise amplifiers to receive RF signals, and a processor coupled to the... | 03/23/2004 |
| 6693305 | Semiconductor device formed by cascade-connecting a plurality of diodes A semiconductor device includes a plurality of diodes including a substrate of a first conductivity type biased to a reference potential, a well region of a second conductivity type formed in a surface region of the substrate, and a first diffusion region... | 02/17/2004 |
| 6667539 | Method to increase the tuning voltage range of MOS varactors A varactor circuit having an increased tuning range comprises a first varactor in series with a second varactor between first and second terminals. A resistor is connected between the first and second terminals. A tap of the resistor is connected to a jun... | 12/23/2003 |
| 6630733 | Integrated circuit package electrical enhancement A configuration for a conventional lead frame for conserving limited leads and for allowing the location of bond pads anywhere on the periphery of the semiconductor device and for reducing the cost of tooling changes by permitting the use of current tooli... | 10/07/2003 |
| 6603153 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 08/05/2003 |
| 6583496 | Single-control monolithic component for a composite bridge A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating ... | 06/24/2003 |
| 6515345 | Transient voltage suppressor with diode overlaying another diode for conserving space A semiconductor component includes a semiconductor layer (210) and at least one diode (220) in the semiconductor layer. The semiconductor component also includes an electrically insulative layer (230) over the semiconductor layer and the diode. The semico... | 02/04/2003 |
| 6504178 | Indirect back surface contact to semiconductor devices A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducti... | 01/07/2003 |
| 6449295 | Method and system for generating laser light A laser system is disclosed. The system comprises laser emitters (102, 104, and 106) forming a laser stack (108). A heater resistor (110) coupled to the laser stack (108) stabilizes the temperature of the laser stack (108). A heat reservoir (112) coupled ... | 09/10/2002 |
