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| Number | Title | Issue Date |
| 8148800 | Nanowire-based semiconductor device and method employing removal of residual carriers A nanowire-based device and method employ removal of residual carriers. The nanowire-based device includes a semiconductor nanowire having a semiconductor junction, and a residual carrier sink. The residual carrier sink is located at or adjacent to the semiconductor... | 04/03/2012 |
| 8008748 | Deep trench varactors A deep trench varactor structure compatible with a deep trench capacitor structure and methods of manufacturing the same are provided. A buried plate layer is formed on a second deep trench, while the first trench is protected from formation of any buried plate laye... | 08/30/2011 |
| 7705428 | Varactor A varactor on a substrate is provided. The varactor comprises a bottom electrode, an upper electrode, a first dielectric layer and a conductive layer. The bottom electrode has several doped regions arranged in the substrate as an array with several rows and several ... | 04/27/2010 |
| 7667296 | Nanowire capacitor and methods of making same A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer c... | 02/23/2010 |
| 7560798 | High performance tapered varactor Disclosed is a semiconductor structure, which includes a non-planar varactor having a geometrically designed depletion zone with a taper, as to provide improved Cmax/Cmin with low series resistance. Because of the taper, the narrowest portion of the depletion zone c... | 07/14/2009 |
| 7423288 | Technique for evaluating a fabrication of a die and wafer The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performa... | 09/09/2008 |
| 7388247 | High precision microelectromechanical capacitor with programmable voltage source A high precision microelectromechanical capacitor with programmable voltage source includes a monolithic MEMS device having a capacitance actuator, a trim capacitor, and a high precision, programmable voltage source. The trim capacitor has a variable capacitance val... | 06/17/2008 |
| 7385241 | Vertical-type capacitor structure Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at least one dielectric layer on the substrate to insulate the first ele... | 06/10/2008 |
| 7294895 | Capacitive dynamic quantity sensor and semiconductor device A capacitive dynamic quantity sensor whose size is small and whose reliability and mass productivity are high is provided. In order to realize signal transmission from a lower electrode to an upper electrode, silicon columns which are electrically isolated from one ... | 11/13/2007 |
| 7251121 | Electronically variable capacitor array A capacitor array may include a bottom electrode, a plurality of top electrodes, at least one dielectric medium and a plurality of switching mechanisms. Each switching mechanism may separably electronically connect two or more top electrodes. The at least one dielec... | 07/31/2007 |
| 7247951 | Chip carrier with oxidation protection layer A chip carrier comprising a laminated layer and an oxidation protection layer is provided. The oxidation protection layer is a non-electrolytic metallic coating or an organic oxidation protection film on the surface of bonding finger pads or other contacts formed by... | 07/24/2007 |
| 7190232 | Self-biased active VCO level shifter A voltage-controlled oscillator (VCO) circuit includes first, second, third, and fourth transistors, each with a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor communicates with the first terminal of the second ... | 03/13/2007 |
| 7183628 | Structure and method of hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 02/27/2007 |
| 7141856 | Multi-structured Si-fin Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produc... | 11/28/2006 |
| 7129563 | Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1−xGex, where 0.5 | 10/31/2006 |
| 7115971 | Nanowire varactor diode and methods of making same A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate... | 10/03/2006 |
| 7067869 | Adjustable 3D capacitor There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom electrode. The areas of the top electrodes of these individual capacitors a... | 06/27/2006 |
| 7053465 | Semiconductor varactor with reduced parasitic resistance A semiconductor varactor with reduced parasitic resistance. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic ... | 05/30/2006 |
| 7052616 | Fabrication of molecular scale devices using fluidic assembly There is disclosed a method providing micro-scale devices, nano-scale devices, or devices having both nano-scale and micro-scale features. The method of the invention comprises fluidic assembly and various novel devices produced thereby. A variety of nanofluidic and... | 05/30/2006 |
| 7030463 | Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method produc... | 04/18/2006 |
| 6936868 | Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer... | 08/30/2005 |
| 6882029 | Junction varactor with high Q factor and wide tuning range A PN-junction varactor includes a first ion well of first conductivity type formed on a semiconductor substrate of second conductivity type. A first dummy gate is formed over the first ion well. A first gate dielectric layer is formed between the first dummy gate an... | 04/19/2005 |
| 6847045 | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it... | 01/25/2005 |
| 6835977 | Variable capactor structure A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped... | 12/28/2004 |
| 6825089 | Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity type, respectively. A conductive region in the well has a same conduc... | 11/30/2004 |
| 6787882 | Semiconductor varactor diode with doped heterojunction A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The b... | 09/07/2004 |
| 6683345 | Semiconductor device and method for making the device having an electrically modulated conduction channel A semiconductor device having a conduction channel which is electrically modulated. A trench structure is formed within a substrate enclosing a diffusion region. The trench structure isolates the devices formed within the diffusion region from the remaini... | 01/27/2004 |
| 6667539 | Method to increase the tuning voltage range of MOS varactors A varactor circuit having an increased tuning range comprises a first varactor in series with a second varactor between first and second terminals. A resistor is connected between the first and second terminals. A tap of the resistor is connected to a jun... | 12/23/2003 |
| 6661069 | Micro-electromechanical varactor with enhanced tuning range A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the... | 12/09/2003 |
| 6635919 | High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications A Micro Electro-Mechanical System (MEMS) varactor (100, 200) having a bottom electrode (116) formed over a substrate (112) and a dielectric material (130) disposed over the bottom electrode (116). A pull-down electrode (122) is formed over spacer (120) an... | 10/21/2003 |
| 6583495 | Variable capacitor and memory device employing the same A variable capacitor and a memory device employing the same. The variable capacitor includes a first electrode formed above a substrate; a second electrode suspended with respect to the first electrode to be moved back and forth with respect to the first ... | 06/24/2003 |
| 6489666 | Semiconductor device with improved heat suppression in peripheral regions A semiconductor device (102) comprises an N type semiconductor substrate (1). A P layer (22) is formed in a first surface (S1) of the semiconductor substrate (1), and a P layer (23) is formed in the semiconductor substrate (1) and in contact with the firs... | 12/03/2002 |
| 6388300 | Semiconductor physical quantity sensor and method of manufacturing the same A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor p... | 05/14/2002 |
| 6369671 | Voltage controlled transmission line with real-time adaptive control A semiconductor structure having a substrate, an insulator above a portion of the substrate, a conductor above the insulator; and at least two contact regions in the substrate on opposite sides of the portion of the substrate, wherein a voltage between th... | 04/09/2002 |
| 6034414 | Variable capacitor using resistor generated heat to control dielectric thickness The invention discloses a variable capacitor including a first storage electrode, a second storage electrode, and a variable length means coupled therebetween. The capacitance can be adjusted by varying a dielectric space therebetween according with an el... | 03/07/2000 |
| 6018175 | Gapped-plate capacitor In a semiconductor device, a capacitor is provided which has a gap in at least one of its plates. The gap is small enough so that fringe capacitance between the sides of this gap and the opposing plate at least compensates, if not overcompensates, for the... | 01/25/2000 |
| 5773874 | Semiconductor device having a mesa structure for surface voltage breakdown A semiconductor device comprises a monocrystalline silicon wafer having a major surface lying in the crystal plane. Disposed on the surface is a mesa having a generally square cross-section with generally rounded corners. The mesa has four main side... | 06/30/1998 |
| 5747865 | Varactor diode controllable by surface layout design An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the... | 05/05/1998 |
| 5721449 | Cam operated inverter bypass safety switch An inverter by pass safety switch for rerouting electrical power either through or around AC variable frequency inverter drives during electrical disturbances, thus allowing a motor to continue operation. The switch works in a mechanical fashion, and comp... | 02/24/1998 |
| 5343069 | Electronic switch with a definite breakdown voltage An electronic switch, in particularly a transistor, has at least one barrier layer extending between regions of different doping concentrations within a semiconductor and is characterized in that the barrier layer has at least one voltage limiting zone (Z... | 08/30/1994 |
