Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8188479 | Pixel electrode structure having via holes disposed on common line with high display quality A pixel electrode structure includes a transparent substrate, a data line, a common line, a first array pixel, and a second array pixel disposed on the transparent substrate. The first/second array pixels respectively include a thin film transistor, a pixel electrod... | 05/29/2012 |
| 8101952 | Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain... | 01/24/2012 |
| 8089070 | Apparatus and method of manufacture for an imager equipped with a cross-talk barrier An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also incl... | 01/03/2012 |
| 7985969 | Transistor and display and method of driving the same A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween... | 07/26/2011 |
| 7768013 | Vertical structure thin film transistor A vertical structure thin film transistor is provided. The vertical structure thin film transistor has a stacked structure of a substrate, a first electrode, a dielectric thin film, a second electrode, a semiconductor thin film, and a third electrode, wherein curren... | 08/03/2010 |
| 7649205 | Self-aligned thin-film transistor and method of forming same A method of manufacturing a thin-film transistor or like structure provides conductive “tails” below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain... | 01/19/2010 |
| 7642555 | Semiconductor device A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over ... | 01/05/2010 |
| 7612374 | TFT containing coalesced nanoparticles A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the d... | 11/03/2009 |
| 7425931 | Display unit of a helmet or a vehicle or an airplane A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a ... | 09/16/2008 |
| 7375373 | Thin film transistor array panel A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, d... | 05/20/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7276728 | Vertical organic transistor A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern, a seco... | 10/02/2007 |
| 7268379 | Memory cell and method for manufacturing the same The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow trench isolations together def... | 09/11/2007 |
| 7265385 | Active matrix type display device and method of manufacturing the same A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provi... | 09/04/2007 |
| 7259433 | Non-volatile semiconductor memory device and method for producing same The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage laye... | 08/21/2007 |
| 7220611 | Liquid crystal display panel and fabricating method thereof A liquid crystal display panel including a thin film transistor array substrate structure including, a substrate, a gate line and a data line disposed on the substrate and insulated from each other by a gate insulating pattern, a thin film transistor provided at int... | 05/22/2007 |
| 7221096 | Active matrix organic light emitting display panel An active matrix organic light emitting display panel includes a first substrate including a seal pattern region, a non-display region, and a display region, the non-display region being between the display region and the seal pattern region, a pad connected to the ... | 05/22/2007 |
| 7220991 | Thin film transistor array panel for liquid crystal display A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insula... | 05/22/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7176790 | Display device and vehicle A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the driver to visually recognize s... | 02/13/2007 |
| 7154117 | Display device A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate 10. The thin film transistor includes first gate electrodes ... | 12/26/2006 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7145175 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 12/05/2006 |
| 7138682 | Organic thin-film transistor and method of manufacturing the same A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insula... | 11/21/2006 |
| 7115903 | Semiconductor device and semiconductor device producing system An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. ... | 10/03/2006 |
| 7101762 | Self-aligned double gate mosfet with separate gates A structure and method of manufacturing a double-gate integrated circuit which includes forming a laminated structure having a channel layer and first insulating layers on each side of the channel layer, forming openings in the laminated structure, forming drain and... | 09/05/2006 |
| 7067845 | Semiconductor device and method of manufacturing the same In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevent... | 06/27/2006 |
| 7034336 | Capacitorless 1-transistor DRAM cell and fabrication method The channel region (11) and the source-drain regions (9, 10) are arranged vertically at a sidewall of a dielectric trench filling (4). On the opposite side, the semiconductor material is bounded by the gate dielectric (18) and the gate el... | 04/25/2006 |
| 7002176 | Vertical organic transistor A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern, a seco... | 02/21/2006 |
| 6995472 | Insulating tube An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as ... | 02/07/2006 |
| 6960502 | Semiconductor device fabrication method A reduction of a leakage current as well as a decrease in the thickness of an insulating film is realized in a semiconductor device. To this end, a silicon oxide film and a silicon nitride film are formed on a substrate, which is then heated to a temperature within ... | 11/01/2005 |
| 6960781 | Shallow trench isolation process A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor. ... | 11/01/2005 |
| 6953976 | Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selecte... | 10/11/2005 |
| 6930326 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 08/16/2005 |
| 6927495 | Semiconductor device and method of manufacturing same Disclosed is a semiconductor device having a precision-worked dual damascene structure. A semiconductor substrate is obtained by forming at least a first interlayer film, an etching stopper film, a second interlayer film, a first hard mask and a second hard mask on ... | 08/09/2005 |
| 6906390 | Nonvolatile semiconductor storage and method for manufacturing the same The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage laye... | 06/14/2005 |
| 6900464 | Thin film transistor device and method of manufacturing the same, and liquid crystal display device The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of for... | 05/31/2005 |
| 6885028 | Transistor array and active-matrix substrate A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive... | 04/26/2005 |
| 6849873 | Thin film transistor array panel for a liquid crystal display In liquid crystal display device having a multi-layer conductive layer, such conductive layer is formed using a photoresist pattern having different thicknesses depending on the position. Upper layer of the gate pad is removed using an etch mask of the photoresist p... | 02/01/2005 |
| 6844599 | Semiconductor device and method of manufacturing the same A semiconductor device has thin film resistors connected in series to form a bleeder resistance circuit. Each of the thin film resistors is made of a polysilicon film doped with B or BF2 P-type impurities and has two end portions each having a high impuri... | 01/18/2005 |
