Class 257/598 - With plural junctions whose depletion regions merge to vary voltage dependence

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device has more than one junction
No. of patents: 31
Last issue date: 06/17/2008

Number	Title	Issue Date
7388276	Metal-insulator varactor devices A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an insulator arrangement includes at least one insulator layer disposed b...	06/17/2008
7112835	Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1...	09/26/2006
7081663	Gate-enhanced junction varactor with gradual capacitance variation A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-po...	07/25/2006
6943399	Varactor and differential varactor A varactor is provided. The varactor includes a second type substrate, two gate structures, a first type doped region and a second type doped region. The two gate structures are disposed over the substrate, and each of the gate structures includes an inter-gate diel...	09/13/2005
6882029	Junction varactor with high Q factor and wide tuning range A PN-junction varactor includes a first ion well of first conductivity type formed on a semiconductor substrate of second conductivity type. A first dummy gate is formed over the first ion well. A first gate dielectric layer is formed between the first dummy gate an...	04/19/2005
6878983	High performance varactor diodes A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region...	04/12/2005
6864528	Integrated, tunable capacitor An integrated, tunable capacitor has terminal regions that extend significantly deeper into the semiconductor body than the customary source/drain terminal regions in the conventional CMOS varactors. For this purpose, by way of example, well-type regions or collecto...	03/08/2005
6787882	Semiconductor varactor diode with doped heterojunction A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The b...	09/07/2004
6667539	Method to increase the tuning voltage range of MOS varactors A varactor circuit having an increased tuning range comprises a first varactor in series with a second varactor between first and second terminals. A resistor is connected between the first and second terminals. A tap of the resistor is connected to a jun...	12/23/2003
6541792	Memory device having dual tunnel junction memory cells A memory device includes memory cells having two tunnel junctions in series. In order to program a selected memory cell, a first tunnel junction in the selected memory cell is blown. Blowing the first tunnel junction creates a short across the first tunne...	04/01/2003
6541814	MOS variable capacitor with controlled dC/dV and voltage drop across W of gate A voltage-variable capacitor is constructed from a metal-oxide-semiconductor transistor. The transistor source has at least two contacts that are biased to different voltages. The source acts as a resistor with current flowing from an upper source contact...	04/01/2003
6400001	Varactor, in particular for radio-frequency transceivers A varactor has a gate region, first and second biasing regions of N+ type embedded in a well, and first and second extraction regions of P+ type, forming a pair of PN junctions with the well. The PN junctions are inversely biased and...	06/04/2002
6331716	Variable capacity device with quantum-wave interference layers A variable capacity device having an nin, pip, nn- p, np- p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second lay...	12/18/2001
6320474	MOS-type capacitor and integrated circuit VCO using same A MOS-type capacitor includes a semiconductor substrate of a first conductive type serving as a first electrode, a conductor layer formed on the semiconductor substrate via a capacitive insulation film and serving as a second electrode, and an impurity re...	11/20/2001
6100770	MIS transistor varactor device and oscillator using same An electrical device having a voltage dependent capacitance is provided comprising a first region of a semiconductor material, and a second region and a third region of a semiconductor material formed in the first region, the second and third regions bein...	08/08/2000
6037650	Variable capacitance semiconductor device The semiconductor device comprises a low-conductivity or insulating layer (5) on one surface of which is formed a conducting section (6) while the other face is provided with a hole- or electron-type semiconductor layer (1) with an ohmic contact. A semico...	03/14/2000
5965912	Variable capacitor and method for fabricating the same A voltage variable capacitor (10) fabricated on a semiconductor substrate (11) includes a gate structure (62) and a well (22) under the gate structure (62). A heavily doped buried layer (15) and a heavily doped contact region (31) in the semiconductor sub...	10/12/1999
5859469	Use of tungsten filled slots as ground plane in integrated circuit structure A semiconductor device having the base and collector surrounded by a continuous tungsten filled slot as ground plane. The portion of the tungsten filled slot over the buried layer extends beyond the surface of the buried layer and the portion of the tungs...	01/12/1999
5789801	Varactor with electrostatic barrier A varactor comprising a substrate of semiconductor material on which is grown both an electrostatic barrier having a first layer of material doped with donor impurities and a second layer of material doped with acceptor impurities and a depletable layer. ...	08/04/1998
5747865	Varactor diode controllable by surface layout design An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the...	05/05/1998
5714797	Variable capacitance semiconductor diode A semiconductor body has a first region of one conductivity type coupled to a first electrode. A second region of the opposite conductivity type is coupled to a second electrode and is provided within the first region to form a first pn junction with the ...	02/03/1998
5506442	Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device A variable-capacitance device has an n-type diffusion layer which has an impurity concentration profile such that a region where the impurity concentration remains substantially constant and a region where the impurity concentration changes abruptly are a...	04/09/1996
5475242	Notched insulation gate static induction transistor integrated circuit A notched insulation gate static induction transistor integrated circuit ording to the present invention comprises an enhancement mode CMOS logic circuit including a notched insulation gate static induction transistor in which a threshold voltage is dete...	12/12/1995
5220193	Variable-capacitance diode device with common electrode A plurality of variable-capacitance diode elements are formed in the top of a semiconductor substrate. The rear surface of the substrate is connected to a first lead frame that acts as a common electrode for one electrode from each of the variable-capacit...	06/15/1993
5136346	Photon stimulated variable capacitance effect devices A photon stimulated variable capacitance effect device that yields useful variations in capacitance responsive to changes in intensity of incident photons, while the operating point of the device is maintained near equilibrium....	08/04/1992
4837607	Large-area, low capacitance semiconductor arrangement A description is given of a semiconductor detector with a low capacitance for detecting radiation and particles having a semiconductor body of a first conductivity type, to which is applied at least one collecting electrode for the majority carriers. Regi...	06/06/1989
4630082	Semiconductor device with multi-electrode construction equivalent to variable capacitance diode A semiconductor device with a multi-electrode construction equivalent to a conventional variable capacitance diode in function is disclosed. The semiconductor device is characterized in that a capacitance read-out portion with a capacitance read-out elect...	12/16/1986
4529995	Variable capacitance device Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor ...	07/16/1985
4529994	Variable capacitor with single depletion layer A variable capacitor which comprises a capacity reading section including a capacity reading electrode which section is formed along a surface of a semiconductor crystal bulk having other sloping surfaces and at least one depletion layer control section i...	07/16/1985
4456917	Variable capacitor A variable capacitor comprising a plurality of variable capacitor elements each having depletion layer control sections and a capacity reading section formed on a semiconductor substrate so that the capacity appearing at each capacity reading section vari...	06/26/1984
4449141	Variable capacitor A variable capacitor comprises a plurality of variable capacity elements each having depletion layer control section and a capacity reading section both formed on a semiconductor substrate so that the capacity appearing at each capacity reading section va...	05/15/1984

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Class 257/598 - With plural junctions whose depletion regions merge to vary voltage dependence