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| Number | Title | Issue Date |
| 8129820 | Semiconductor device A bipolar transistor for semiconductor device has a collector region having a first conductivity type disposed on a surface of a semiconductor substrate having the first conductivity type. A base region having a second conductivity type is disposed in the collector ... | 03/06/2012 |
| 8058703 | Semiconductor transistor device and method of manufacturing the same A semiconductor transistor device includes a drift region, an insulating structure, a gate insulator, a gate electrode, a source, and a drain. The drift region includes a first lateral portion having a first dopant concentration and a second lateral portion having a... | 11/15/2011 |
| 8022506 | SOI device with more immunity from substrate voltage A semiconductor on insulator device has an insulator layer, an active layer (40) on the insulator layer, a lateral arrangement of collector (10), emitter (30) and base (20) on the active layer, and a high Base-dose region (70) exte... | 09/20/2011 |
| 7939912 | Spin polarization amplifying transistor An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current ... | 05/10/2011 |
| 7902635 | High-power-gain, bipolar transistor amplifier Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide extremely low base resistances boosting performance over similar common-emit... | 03/08/2011 |
| 7872330 | Bipolar transistor with enhanced base transport A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerat... | 01/18/2011 |
| 7851890 | Semiconductor device and method for manufacturing the same By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed o... | 12/14/2010 |
| 7750438 | Semiconductor device An n-type buffer region 6 is arranged between an n− drift region 1 and a p-type collector region 7, and has a higher impurity concentration than n− drift region 1 Assuming that α represents the ratio (WTA/WTB) b... | 07/06/2010 |
| 7705427 | Integrated circuit comprising a gradually doped bipolar transistor An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the centra... | 04/27/2010 |
| 7705426 | Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device The present invention provides an integrated semiconductor device that includes a semiconductor substrate, a first device containing a heterojunction bipolar transistor (HBT) located in a first region of the semiconductor substrate, wherein the HBT includes a base r... | 04/27/2010 |
| 7692269 | Vertical organic transistor A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter a... | 04/06/2010 |
| 7667295 | Semiconductor device In a semiconductor device including a bipolar transistor, a base region has a two layer structure including a first base region, and a second base region which is provided around the first base region and has a lower impurity density than that of the first base regi... | 02/23/2010 |
| 7612430 | Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second ... | 11/03/2009 |
| 7566948 | Bipolar transistor with enhanced base transport A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerat... | 07/28/2009 |
| 7547959 | Bipolar junction transistor and manufacturing method thereof An improved bipolar junction transistor and a method for manufacturing the same are provided. The bipolar junction transistor includes: a buried layer and a high concentration N-type collector region in a P-type semiconductor substrate; a low concentration P-type ba... | 06/16/2009 |
| 7538412 | Semiconductor device with a field stop zone A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant ... | 05/26/2009 |
| 7439608 | Symmetric bipolar junction transistor design for deep sub-micron fabrication processes Described herein are embodiments of a bipolar junction transistor including a plurality of base terminal rings having an emitter terminal ring between any two base terminal rings of the plurality of base terminal rings, and a collector terminal ring surrounding the ... | 10/21/2008 |
| 7378325 | Semiconductor device and manufacturing method thereof A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposit... | 05/27/2008 |
| 7375410 | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof The present invention provides a “collector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped collector. Instead, the inventive vertical SOI BJT uses a back gate-induced, minority carrier inversion layer as the intrins... | 05/20/2008 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends betwe... | 03/11/2008 |
| 7342294 | SOI bipolar transistors with reduced self heating A bipolar transistor includes a collector located over a substrate; and a heat conductive path connecting the substrate to the collector. The heat conductive path is filled with a heat conductive material such as metal or polysilicon. In one embodiment the heat cond... | 03/11/2008 |
| 7332469 | Intrapleural single-chain urokinase alone or complexed to its soluble receptor protects against pleural adhesions The present invention relates to methods of preventing or decreasing the severity of scarring in a subject comprising: obtaining a pharmaceutical composition comprising a single chain urokinase plasminogen activator molecule (scuPA) or a scuPA mimetic; and administe... | 02/19/2008 |
| 7329941 | Creating increased mobility in a bipolar device The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressiv... | 02/12/2008 |
| 7327012 | Bipolar Transistor Devices A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ... | 02/05/2008 |
| 7323390 | Semiconductor device and method for production thereof The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an a... | 01/29/2008 |
| 7323763 | Semiconductor device having an improved voltage controlled oscillator A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The var... | 01/29/2008 |
| 7291898 | Selective and non-selective epitaxy for base integration in a BiCMOS process and related structure According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitax... | 11/06/2007 |
| 7288829 | Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide Disclosed is a method of forming a transistor in an integrated circuit structure that begins by forming a collector in a substrate and an intrinsic base above the collector. Then, the invention patterns an emitter pedestal for the lower portion of the emitter on the... | 10/30/2007 |
| 7285830 | Lateral bipolar junction transistor in CMOS flow An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for c... | 10/23/2007 |
| 7282764 | Semiconductor device A semiconductor device having high ruggedness is provided. The distance Wm2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm1 between buried regions p... | 10/16/2007 |
| 7282418 | Method for fabricating a self-aligned bipolar transistor without spacers According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated o... | 10/16/2007 |
| 7271046 | Method of making a semiconductor device in which a bipolar transistor and a metal silicide layer are formed on a substrate A semiconductor device includes a bipolar transistor formed on a semiconductor substrate 1, in which a collector region 13 is formed on the semiconductor substrate 1; a first insulating layer 31 having a first opening 51 formed in ... | 09/18/2007 |
| 7268413 | Bipolar transistors with low-resistance emitter contacts Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching spe... | 09/11/2007 |
| 7268412 | Double polysilicon bipolar transistor A bipolar transistor with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and s... | 09/11/2007 |
| 7262484 | Structure and method for performance improvement in vertical bipolar transistors A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of th... | 08/28/2007 |
| 7262483 | Semiconductor device and method for manufacturing the same By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed o... | 08/28/2007 |
| 7253498 | Bipolar transistor with geometry optimized for device performance, and method of making same The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a... | 08/07/2007 |
| 7247925 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semicon... | 07/24/2007 |
| 7247926 | High-frequency switching transistor A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area... | 07/24/2007 |
| 7235861 | NPN transistor having reduced extrinsic base resistance and improved manufacturability A method for fabricating an NPN bipolar transistor comprises forming a base layer on a top surface of a substrate. The NPN bipolar transistor may be an NPN silicon-germanium heterojunction bipolar transistor. The method for fabricating the NPN bipolar transistor may... | 06/26/2007 |
