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| Number | Title | Issue Date |
| 7952166 | Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed... | 05/31/2011 |
| 7911033 | Bipolar transistor with depleted emitter This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base becomes small. This concept also applies to the diodes or rectifiers. W... | 03/22/2011 |
| 7492034 | Semiconductor device A semiconductor device (1, 20-80) has an emitter terminal (2), a collector terminal (3) and also a semiconductor body (4) provided between emitter terminal (2) and collector terminal (3). An emitter zone (5, 70... | 02/17/2009 |
| 7368361 | Bipolar junction transistors and method of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti... | 05/06/2008 |
| 7358545 | Bipolar junction transistor A bipolar junction transistor is provided. A p-type well region surrounds an n-type emitter and connects with the bottom of the emitter to serve as a base. A p-type base pick-up region connects with the base and surrounds the emitter. An n-type deep well, connected ... | 04/15/2008 |
| 7304334 | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided ... | 12/04/2007 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7256472 | Bipolar transistor A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance. ... | 08/14/2007 |
| 7253498 | Bipolar transistor with geometry optimized for device performance, and method of making same The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a... | 08/07/2007 |
| 7247924 | Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysili... | 07/24/2007 |
| 7244667 | Method and device for the production of thin epitaxial semiconductor layers System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput. The surfaces of the semiconductor sub... | 07/17/2007 |
| 7183627 | Independent control of polycrystalline silicon-germanium in an HBT and related structure In one embodiment a precursor gas for growing a polycrystalline silicon-germanium region and a single crystal silicon-germanium region is supplied. The precursor gas can be, for example, GeH4. The polycrystalline silicon-germanium region can be, for examp... | 02/27/2007 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe bas... | 02/06/2007 |
| 7138669 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant ther... | 11/21/2006 |
| 7119382 | Heterobipolar transistor and method of fabricating the same The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher t... | 10/10/2006 |
| 7091099 | Bipolar transistor and method for fabricating the same A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emit... | 08/15/2006 |
| 7091578 | Bipolar junction transistors and methods of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti... | 08/15/2006 |
| 7084484 | Semiconductor integrated circuit A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer on the front surface side of a second conductive type base layer that ... | 08/01/2006 |
| 7078744 | Transistor emitter having alternating undoped and doped layers A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next, a doped polysilicon layer is non-conformally deposited over the undo... | 07/18/2006 |
| 7064361 | NPN transistor having reduced extrinsic base resistance and improved manufacturability According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-ge... | 06/20/2006 |
| 7049681 | Bipolar transistor device having phosphorous A Si1-xGex layer 111b functioning as the base composed of an i-Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111 | 05/23/2006 |
| 7022578 | Heterojunction bipolar transistor using reverse emitter window A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive material over the collector region, an extrinsic base region, an emitt... | 04/04/2006 |
| 6979884 | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do n... | 12/27/2005 |
| 6977195 | Test structure for characterizing junction leakage current For characterizing bulk leakage current of a junction, a center junction surrounded by an isolation structure is formed with a first depth. In addition, at least one periphery junction having a second depth greater than the first depth is formed in a portion of the ... | 12/20/2005 |
| 6939728 | Method of fabricating silicon emitter with a low porosity heavily doped contact layer A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron ... | 09/06/2005 |
| 6903417 | Power semiconductor device A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substra... | 06/07/2005 |
| 6891249 | Method and system for high density integrated bipolar power transistor using buried power buss A method and system for providing a bipolar power transistor on a semiconductor device is disclosed. The method and system comprise providing a semiconductor substrate. The method and system includes providing an emitter base structure in the power device. The metho... | 05/10/2005 |
| 6888226 | Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower than a dopant concentration of the base layer, and a second layer of... | 05/03/2005 |
| 6881639 | Method of manufacturing semiconductor device The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lam... | 04/19/2005 |
| 6867477 | High gain bipolar transistor According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further ... | 03/15/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6806555 | Semiconductor component and method for fabricating it A semiconductor component and a method for fabricating it includes a substrate and an epitaxial layer situated thereon and integrating at least a first and a second bipolar component in the layer. The first and second bipolar components have a buried layer and diffe... | 10/19/2004 |
| 6800881 | Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area A silicon-germanium hetero bipolar transistor comprising a silicon collector layer, a boron-doped silicon-germanium base layer, a silicon emitter layer and an emitter contact area. The transistor is fabricated using an epitaxy process on a surface of pure silicon. A... | 10/05/2004 |
| 6800880 | Heterojunction bipolar transistors with extremely low offset voltage and high current gain Novel heterojunction bipolar transistors (HBT's) with high current gain and extremely low offset voltage are disclosed. Owing to the insertion of spacer/δ-doped sheet/spacer at base-emitter (B-E) heterojunction in this invention, the potential spike at B-E junction... | 10/05/2004 |
| 6781214 | Metastable base in a high-performance HBT According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial silicon-germanium base, for example, may have a concentration of germanium gre... | 08/24/2004 |
| 6703687 | Bipolar transistor and method for manufacturing the same A bipolar transistor and a method for manufacturing the bipolar transistor are provided. The bipolar transistor includes a collector region including a semiconductor substrate doped with a first conductive dopant, an intrinsic base region low-density dope... | 03/09/2004 |
| 6703685 | Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo... | 03/09/2004 |
| 6674149 | Bipolar transistor device having phosphorous A Si1-x Gex layer 111b functioning as the base composed of an i-Si1-x Gex layer and a p+ Si1-x Gex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is ... | 01/06/2004 |
| 6657281 | Bipolar transistor with a low K material in emitter base spacer regions The present invention provides a bipolar transistor located on a semiconductor wafer substrate. The bipolar transistor may comprise a collector located in the semiconductor wafer substrate, a base located in the collector, and an emitter located on the ba... | 12/02/2003 |
| 6653715 | Bipolar transistor A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be supp... | 11/25/2003 |
