Class 257/589 - Avalanche transistor

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device is a bipolar transistor
No. of patents: 21
Last issue date: 10/03/2006

Number	Title	Issue Date
7115973	Dual-sided semiconductor device with a resistive element that requires little silicon surface area A dual-sided semiconductor device is formed on a wafer with a resistive element that is formed through the wafer. By forming the resistive element through the wafer, a resistive element, such as a large resistive element, can be formed on the wafer that requires ver...	10/03/2006
6936868	Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer...	08/30/2005
6847045	High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it...	01/25/2005
6707128	Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode A semiconductor device comprises a first semiconductor layer of a first conductivity type provided on a semiconductor substrate of the first conductivity type, a base layer of a second conductivity type provided in the first semiconductor layer, for defining a verti...	03/16/2004
6566749	Semiconductor die package with improved thermal and electrical performance A semiconductor die package is disclosed. In one embodiment, the package includes a semiconductor die comprising a vertical power transistor. A source electrode and a gate contact region are at the first surface of the semiconductor die. A drain electrode...	05/20/2003
5834813	Field-effect transistor for one-time programmable nonvolatile memory element A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain sou...	11/10/1998
5659197	Hot-carrier shield formation for bipolar transistor The present invention provides a bipolar transistor in which a lightly doped n-type hot-carrier shield extends in an epitaxial layer adjacent from a poly-emitter to an extrinsic base. This hot-carrier shield minimizes performance impairment that would oth...	08/19/1997
5602413	Avalanche phototransistor A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical, collector, with the thin heavily doped base portion adjoining th...	02/11/1997
5539233	Controlled low collector breakdown voltage vertical transistor for ESD protection circuits An npn transistor having a low collector-base breakdown voltage. An emitter region (104, 106) of a first conductivity type is located in a semiconductor substrate (102). A base region (14) of a second conductivity type is located within the emitter region...	07/23/1996
5345103	Gate controlled avalanche bipolar transistor An insulated gate controlled avalanche bipolar transistor has a heavily doped (with doping of at least 1×1018 cm-3) substrate and a lightly doped channel layer of the same conductivity type on the substrate. The source/emitter and d...	09/06/1994
5321301	Semiconductor device The present invention relates to a semiconductor device which comprises: an n- type buried collector provided on an n type silicon epitaxial layer disposed in an emitter opening; an n- type silicon collector disposed on said collec...	06/14/1994
5235216	Bipolar transistor using emitter-base reverse bias carrier generation A circuit for generating a negative voltage includes: a bipolar transistor including, a) an N type collector region, b) a P type base region, and c) an N type emitter region, the base region width between the emitter region and the collector region being ...	08/10/1993
5036372	Heterojunction avalanche transistor An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the...	07/30/1991
4712152	Semiconductor integrated circuit device A semiconductor integrated circuit device comprising: at least two NPN transistors whose bases and emitters are connected to the ground and whose collectors are connected to an input terminal; one of said NPN transistors having a lower breakdown starting ...	12/08/1987
4642491	Single transistor driver circuit A driver circuit is provided which includes a field effect transistor having first and second spaced apart semiconductor regions of a given conductivity type and a third semiconductor region of a conductivity type opposite to the given conductivity type i...	02/10/1987
4291319	Open base bipolar transistor protective device A transistor, used in the switching of current in an inductive load, is protected by a similar transistor connected between collector and base. The protective transistor has a lower breakdown voltage than the transistor being protected. When the inductive...	09/22/1981
4288708	Differentially modulated avalanche area magnetically sensitive transistor A new semiconductive device for sensing uniaxial magnetic fields is described. The sensor is essentially a dual collector lateral bipolar transistor operated in the avalanche region. Each of the collectors exhibits two space charge resistance effects. One...	09/08/1981
4276555	Controlled avalanche voltage transistor and magnetic sensor A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relationship to a new family of hybrid transistors. The devices constructed also exhibit magnetic sensitivity. The magnetic responsiveness of such devices creates a n...	06/30/1981
4262295	Semiconductor device A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the intermediate layers among three layers constituting such sect...	04/14/1981
4100561	Protective circuit for MOS devices The circuit protects the oxide of MOS devices from destructive breakdown by limiting the potential difference which can exist between two circuit nodes. By forming a protective circuit between each pair of nodes in the circuit, the range of voltages which...	07/11/1978
4041515	Avalanche transistor operating above breakdown An avalanche transistor (three terminal avalanche device) is provided with a p+ electrode, for example, added to an n+ - n - n+ structure. A reverse bias junction is provided by a first voltage source connected between the...	08/09/1977

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Class 257/589 - Avalanche transistor