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| Number | Title | Issue Date |
| 8178949 | Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first con... | 05/15/2012 |
| 8148799 | Self-aligned bipolar transistor structure A bipolar transistor structure comprises a semiconductor substrate having a first conductivity type, a collector region having a second conductivity type that is opposite the first conductivity type formed in a substrate active device region defined by isolation die... | 04/03/2012 |
| 8129818 | Power device The present invention is a power device includes, a first conductive type semiconductor substrate, a second conductive type base region formed on a surface of the semiconductor substrate, a second conductive type collector region formed on a rear surface of the semi... | 03/06/2012 |
| 7968971 | Thin-body bipolar device A thin-body bipolar device includes: a semiconductor substrate, a semiconductor fin constructed over the semiconductor substrate, a first region of the semiconductor fin having a first conductivity type, the first region serving as a base of the thin-body bipolar de... | 06/28/2011 |
| 7880270 | Vertical bipolar transistor A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystallin... | 02/01/2011 |
| 7868424 | Semiconductor device and method of manufacturing the same The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising a vertical bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a f... | 01/11/2011 |
| 7863709 | Low base resistance bipolar junction transistor array Methods and apparatuses directed to low base resistance bipolar junction transistor (BJT) devices are described herein. A low base resistance BJT device may include a collector layer, a base layer formed on the collector layer, a plurality of isolation trench lines ... | 01/04/2011 |
| 7745906 | Semiconductor device having spaced unit regions and heavily doped semiconductor layer An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is in contact with the emitter electrode, and a p+-... | 06/29/2010 |
| 7737530 | Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure includes a semiconductor body having a top surface and sidewalls extending from the top surf... | 06/15/2010 |
| 7709931 | Trenched semiconductor device An IGBT is disclosed which has a set of inside trenches and an outside trench formed in its semiconductor substrate. The substrate has emitter regions adjacent the trenches, a p-type base region adjacent the emitter regions and trenches, and an n-type base region co... | 05/04/2010 |
| 7482672 | Semiconductor device structures for bipolar junction transistors Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure comprises a semiconductor body having a top surface and sidewalls extending from the top sur... | 01/27/2009 |
| 7459766 | Semiconductor bipolar transistor A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A second conduction type collector region is formed in the semiconductor s... | 12/02/2008 |
| 7368764 | Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor A heterojunction bipolar transistor and a method of making a heterojunction bipolar transistor. The heterojunction bipolar transistor includes: a regrown emitter region; an intrinsic base region forming a junction with the regrown emitter region; and an extrinsic ba... | 05/06/2008 |
| 7368361 | Bipolar junction transistors and method of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti... | 05/06/2008 |
| 7365016 | Anhydrous HF release of process for MEMS devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performin... | 04/29/2008 |
| 7361954 | Power semiconductor device Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode;... | 04/22/2008 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends betwe... | 03/11/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7329941 | Creating increased mobility in a bipolar device The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressiv... | 02/12/2008 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7288828 | Metal oxide semiconductor transistor device A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gat... | 10/30/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7279753 | Floating base bipolar ESD devices The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated circuit, a floating base, and a grounded emitter. When an ESD pulse hits t... | 10/09/2007 |
| 7262443 | Silicide uniformity for lateral bipolar transistors Method and apparatus for forming a semiconductor device. The method includes defining a plurality of rows in a semiconductor layer. Thereafter, on one or more of the plurality of rows, one or more bipolar junction devices are formed. Each of the bipolar junction dev... | 08/28/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7262483 | Semiconductor device and method for manufacturing the same By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed o... | 08/28/2007 |
| 7256433 | Bipolar transistor and a method of manufacturing the same A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g.... | 08/14/2007 |
| 7253521 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in combination with diffusion barriers, rather than aluminum, to form the wi... | 08/07/2007 |
| 7247925 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semicon... | 07/24/2007 |
| 7242061 | Semiconductor device The invention provides semiconductor devices having an output circuit in which transistors do not fail to achieve their original capability, and electrostatic breakdown is difficult to occur. A semiconductor device is equipped with a semiconductor substrate, an elem... | 07/10/2007 |
| 7239747 | Method and system for locating position in printed texts and delivering multimedia information Apparatus and methods are disclosed for processing printed material to provide an index of locations within the printed material that can be associated with external actions such as displaying a graphical image, providing an audio or video output, or providing a mul... | 07/03/2007 |
| 7230324 | Strobe light control circuit and IGBT device As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter termi... | 06/12/2007 |
| 7220665 | H plasma treatment Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive l... | 05/22/2007 |
| 7202136 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant ther... | 04/10/2007 |
| 7190047 | Transistors and methods for making the same Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound se... | 03/13/2007 |
| 7180159 | Bipolar transistor having base over buried insulating and polycrystalline regions A bipolar transistor in a monocrystalline semiconductor substrate (101), which has a first conductivity type and includes a surface layer (102) of the opposite conductivity type. The transistor comprises an emitter contact (110) on the surface l... | 02/20/2007 |
| 7170133 | Transistor and method of fabricating the same A transistor and a method of fabricating the same: The transistor includes an isolation layer disposed in a semiconductor substrate to define an active region. A pair of source/drain regions is disposed in the active region, spaced apart from each other. A channel r... | 01/30/2007 |
| 7169660 | Lithography-independent fabrication of small openings for forming vertical mos transistor A method for formation of openings in semiconducting devices not limited by constraints of photolithography include forming a first dielectric layer over a semiconducting substrate, depositing a polysilicon layer over the first dielectric layer, forming a second die... | 01/30/2007 |
| 7164186 | Structure of semiconductor device with sinker contact region A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the burie... | 01/16/2007 |
| 7141470 | Low voltage CMOS structure with dynamic threshold voltage A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is complimentary to the semiconductor material type of a well thereof, so as to ... | 11/28/2006 |
