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| Number | Title | Issue Date |
| 7855435 | Integrated circuit, method of manufacturing an integrated circuit, and memory module According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changin... | 12/21/2010 |
| 7808079 | Circuit arrangement and integrated circuit A circuit arrangement includes a plurality of type-identical and identically operated active components, or separate sections of an active component, and includes a branched wiring structure for the interconnection of component connections. In each case the wiring e... | 10/05/2010 |
| 7466010 | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do n... | 12/16/2008 |
| 7420227 | Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ... | 09/02/2008 |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7307336 | BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structure The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of t... | 12/11/2007 |
| 7295448 | Interleaved power converter A power converter architecture interleaves full bridge converters to alleviate thermal management problems in high current applications, and may, for example, double the output power capability while reducing parts count and costs. For example, one phase of a three ... | 11/13/2007 |
| 7289329 | Integration of planar transformer and/or planar inductor with power switches in power converter A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled... | 10/30/2007 |
| 7268413 | Bipolar transistors with low-resistance emitter contacts Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching spe... | 09/11/2007 |
| 7256472 | Bipolar transistor A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance. ... | 08/14/2007 |
| 7247925 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semicon... | 07/24/2007 |
| 7230333 | Semiconductor package A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can. ... | 06/12/2007 |
| 7217988 | Bipolar transistor with isolation and direct contacts A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor i... | 05/15/2007 |
| 7180763 | Power converter A power converter comprising a DC/AC bridge circuit electrically coupled between positive and negative DC bus terminals and a set of phase terminals, a DC/DC bridge circuit electrically coupled to the positive and negative DC bus terminals and a set of DC bridge ter... | 02/20/2007 |
| 7163854 | Fabrication method of a semiconductor device To form a wiring electrode having excellent contact function, in covering a contact hole formed in an insulting film, a film of a wiring material comprising aluminum or including aluminum as a major component is firstly formed and on top of the film, a film having a... | 01/16/2007 |
| 7153774 | Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability A method of making a semiconductor device is described. That method includes forming a copper containing layer on a substrate, and forming an alloying layer that includes an alloying element on the copper containing layer. After applying heat to cause an intermetall... | 12/26/2006 |
| 7154172 | Integrated circuit carrier An integrated circuit carrier is claimed comprising at least one receiving zone for an integrated circuit. A plurality of island-defining portions, having electrical terminals, is arranged about each of the receiving zones. Rigidity-reducing arrangements are dispose... | 12/26/2006 |
| 7136277 | Basepan assembly There is provided a method and a basepan assembly for a panel board. The basepan assembly comprises a basepan having a bottom portion and at least one sidewall. A first bus bar is mounted in the bottom portion of the basepan. A second bus bar is mounted to its side ... | 11/14/2006 |
| 7109534 | Transistor and electronic device The invention provides a transistor capable of achieving a higher speed although its construction is easy to manufacture without requiring wiring to intersect three-dimensionally even if unit elements of transistors are connected in parallel, and to provide an elect... | 09/19/2006 |
| 7105915 | Chip carrier a chip module and method of manufacturing the chip module A chip carrier for manufacturing a chip module (18), with a substrate and connection leads arranged on the substrate has connection leads designed like stripes and extending parallel over the substrate. The connection leads are electrically conductive connect... | 09/12/2006 |
| 7091587 | Semiconductor device An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip which includes a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digita... | 08/15/2006 |
| 7071550 | Semiconductor module having heat sink serving as wiring line A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the... | 07/04/2006 |
| 7064417 | Semiconductor device including a bipolar transistor A semiconductor device includes a bipolar transistor formed on a semiconductor substrate 1, in which a collector region 13 is formed on the semiconductor substrate 1; a first insulating layer 31 having a first opening 51 formed in ... | 06/20/2006 |
| 7045831 | Semiconductor device A semiconductor device of the present invention comprises a semiconductor chip, metal layers formed on a first main surface of the semiconductor chip, a first conductive layer layered on a second main surface of the semiconductor chip, consisting of a plurality of c... | 05/16/2006 |
| 7038327 | Anisotropic conductive film bonding pad Enhanced ACF bonding pads for use in conjunction with anisotropic conductive film (ACF) in electronic devices, such as, liquid crystal display panels and plasma display panels have at least two finger-like portions. Such bonding pads, typically provided on a flexibl... | 05/02/2006 |
| 7027303 | Electronic power module The inventive electronic power module is provided for effecting the smooth starting of motors. The module essentially includes two semiconductor elements, which are connected in an electrically anti-parallel manner and which are clamped between two metal bars, havin... | 04/11/2006 |
| 7005723 | Bipolar transistor and method of producing same In a method of producing a bipolar transistor, a semiconductor substrate having a substrate surface is provided. A base-terminal layer for providing a base terminal is formed on the substrate surface, and an emitter window having a wall area is formed in the base-te... | 02/28/2006 |
| 6992543 | Mems-tuned high power, high efficiency, wide bandwidth power amplifier A circuit for matching the impedance of an output load to an active device includes a transformer including a first winding having a terminal for coupling to the output of the active device and a second winding electromagnetically coupled to the first winding, and a... | 01/31/2006 |
| 6984883 | Semiconductor power module An insulating substrate (17) includes a surface conductive layer (25) fixedly laminated on a surface of the plate-like semiconductor body (21) via a surface side fixing member (24, 26). The surface side fixing member (24, 26) inclu... | 01/10/2006 |
| 6979884 | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do n... | 12/27/2005 |
| 6954368 | Low stray interconnection inductance power converting molecule for converting a DC voltage into an AC voltage, and a method therefor The low stray interconnecton power converting module is for converting a DC voltage into an AC voltage. It comprises two DC voltage terminals for receiving the DC voltage, an AC voltage terminal for delivering the AC voltage, and a half-bridge including a pair of po... | 10/11/2005 |
| 6953981 | Semiconductor device with deep substrates contacts The present invention relates to a semiconductor device arranged at a surface of a semiconductor substrate having an initial doping having an electrical connection comprising at least one plug made of a material with a high conductivity, especially a material other ... | 10/11/2005 |
| 6940136 | Circuit arrangement with semiconductor elements arranged in chips A circuit arrangement with semiconductor elements arranged in chips is described. The circuit arrangement is characterized by at least one metal body (s1) for electrically contacting the semiconductor elements and for dissipating the heat produced by the semi... | 09/06/2005 |
| 6936911 | Semiconductor integrated circuit device A semiconductor integrated circuit device has a semiconductor integrated circuit chip, a package enclosing the chip, and a plurality of conductors connecting the bonding pads of the chip to the leads of the package. The chip has an internal circuit, a plurality of b... | 08/30/2005 |
| 6906410 | Semiconductor device and method for manufacturing same A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes and a plurality of control electrodes. Conductive plates are disposed on the current electrodes and the control electrodes, and extend to regions for... | 06/14/2005 |
| 6906404 | Power module with voltage overshoot limiting A power module employs at least one capacitor electrically coupled across the input terminals to reduce voltage overshoot. The capacitor may be surface mounted to a high side collector plating area and a low side emitter plating area. The power module may employ a l... | 06/14/2005 |
| 6897547 | Semiconductor device including bipolar junction transistor, and production method therefor A semiconductor device includes a low resistance semiconductor substrate, a high resistance semiconductor layer formed on the substrate, an insulation layer formed on the semiconductor layer, and a transistor element composed of a collector region, abase region, and... | 05/24/2005 |
| 6894324 | Silicon-on-insulator diodes and ESD protection circuits A silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided. The SOI gated diode has a PN junction at the middle region under the gate, and which has more junction area than a normal diode. The SOI non-gated junction diode has a PN junction at... | 05/17/2005 |
| 6890826 | Method of making bipolar transistor with integrated base contact and field plate A method of manufacturing a bipolar junction transistor results in an integrated polysilicon base contact and field plate element minimally spaced from a polysilicon emitter contact by using a single mask to define respective openings for these elements. In particul... | 05/10/2005 |
