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| Number | Title | Issue Date |
| 7397108 | Bipolar transistor A monolithically integrated bipolar transistor has an SOI substrate, a collector region in the SOI substrate, a base layer region on top of and in contact with the collector region, and an emitter layer region on top of and in contact with the base layer region, whe... | 07/08/2008 |
| 7394113 | Self-alignment scheme for a heterojunction bipolar transistor Embodiments herein present a structure, method, etc. for a self-alignment scheme for a heterojunction bipolar transistor (HBT). An HBT is provided, comprising an extrinsic base, a first self-aligned silicide layer over the extrinsic base, and a nitride etch stop lay... | 07/01/2008 |
| 7253498 | Bipolar transistor with geometry optimized for device performance, and method of making same The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a... | 08/07/2007 |
| 7247926 | High-frequency switching transistor A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area... | 07/24/2007 |
| 7247925 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semicon... | 07/24/2007 |
| 7095682 | Compact optical signal detecting mechanism and optical storage device having improved signal quality An optical pickup including a stem; a substrate mounted on the stem; a laser diode mounted on, and electrically insulated from, the substrate; and a photodetector provided on the substrate for detecting return light from an object to be irradiated. The substrate is ... | 08/22/2006 |
| 7019383 | Gallium arsenide HBT having increased performance and method for its fabrication According to one exemplary embodiment, a gallium arsenide heterojunction bipolar transistor comprises a collector layer and a first spacer layer situated over the collector layer, where the first spacer layer is a high-doped P+ layer. For example, the first spacer l... | 03/28/2006 |
| 6933196 | Isolation structure and method for semiconductor device A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor substrate, forming a buried insulating film in the trenches, filling ... | 08/23/2005 |
| 6924177 | Method for producing a thyristor A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field... | 08/02/2005 |
| 6917077 | Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode A semiconductor arrangement including: a substrate having a substrate layer (13) with an upper and lower surface, the substrate layer (13) being of a first conductivity type; a first buried layer (... | 07/12/2005 |
| 6894367 | Vertical bipolar transistor A vertical bipolar transistor has a J-FET incorporated in an epitaxial layer. The pinch-off voltage of the J-FET is less than the collector-emitter breakdown voltage of a bipolar transistor without the J-FET. This results in a considerable increase in the collector-... | 05/17/2005 |
| 6890826 | Method of making bipolar transistor with integrated base contact and field plate A method of manufacturing a bipolar junction transistor results in an integrated polysilicon base contact and field plate element minimally spaced from a polysilicon emitter contact by using a single mask to define respective openings for these elements. In particul... | 05/10/2005 |
| 6891250 | Semiconductor device with bipolar transistor A base contact section of a planar structure electrically connecting a base electrode to a base region of a bipolar transistor is constructed of a repeating structure in a plan view, in which a high impurity concentration region of the same conductivity type as that... | 05/10/2005 |
| 6881639 | Method of manufacturing semiconductor device The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lam... | 04/19/2005 |
| 6879024 | Strobe light control circuit and IGBT device As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter termi... | 04/12/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6803642 | Bipolar device having non-uniform depth base-emitter junction A non-uniform depth base-emitter junction, with deeper junction at the lateral portions of the emitter, preferably coupled with a recessed and raised extrinsic base, bipolar transistor, and a method of making the same. The bipolar transistor includes a substrate, a ... | 10/12/2004 |
| 6777780 | Trench bipolar transistor The invention relates to a trench bipolar transistor structure, having a base 7, emitter 9 and collector 4, the latter being divided into a higher doped region 3 and a lower doped drift region 5. An insulated gate 11 is prov... | 08/17/2004 |
| 6734520 | Semiconductor component and method of producing it A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insu... | 05/11/2004 |
| 6614073 | SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc... | 09/02/2003 |
| 6570242 | Bipolar transistor with high breakdown voltage collector A transistor that includes a doped buried region 320 within a semiconductor body 300, 340. The doped buried region includes a portion having a first thickness 348 and a second thickness, the first thickness being less than the second thickness. In one emb... | 05/27/2003 |
| 6459102 | Peripheral structure for monolithic power device A peripheral structure for a monolithic power device, preferably planar, includes front and rear surfaces, connected respectively to a cathode and an anode, two junctions respectively reverse-biased and forward-biased when a direct and adjacent voltage is... | 10/01/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6404037 | Insulated gate bipolar transistor An insulated gate bipolar transistor having a collector electrode 3, an emitter region 6 and a base region 4 formed between the collector electrode and the emitter region, further including a channel stop region 17 spaced from the emitter region and elect... | 06/11/2002 |
| 6355971 | Semiconductor switch devices having a region with three distinct zones and their manufacture In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accord... | 03/12/2002 |
| 6316817 | MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a verticall... | 11/13/2001 |
| 6252282 | Semiconductor device with a bipolar transistor, and method of manufacturing such a device The invention relates to a semiconductor device including a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the... | 06/26/2001 |
| 6215167 | Power semiconductor device employing field plate and manufacturing method thereof A power semiconductor device having an breakdown voltage improving structure and a manufacturing method thereof are provided. A collector region and a base region create a pn junction between them. At least one accelerating region of the same conductivity... | 04/10/2001 |
| 6114746 | Vertical PNP transistor and relative fabrication method A vertical PNP transistor integrated in a semiconductor material wafer having an N type substrate and an N type epitaxial layer forming a surface. The transistor has a P type buried collector region astride the substrate and the epitaxial layer; a collect... | 09/05/2000 |
| 6078095 | Power transistor including a plurality of unit transistors A unit transistor forming a power transistor includes a collector region, a base region, and an emitter region. A base contact portion is formed at a prescribed portion on the base region. The base region has a convex portion, which projects in the direct... | 06/20/2000 |
| 6069404 | Arrangement for the reduction of noise in microwave transistors and method for the manufacture thereof A structure for a microwave device in which the minimum noise figure is reduced in that underneath the base terminal surface of a transistor, a highly-doped trenched layer is formed, which layer is connected to a reference potential in the vicinity of the... | 05/30/2000 |
| 6013941 | Bipolar transistor with collector surge voltage protection A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bi... | 01/11/2000 |
| 5965931 | Bipolar transistor having base region with coupled delta layers A bipolar transistor includes multiple coupled delta layers in the base region between the emitter and collector regions to enhance carrier mobility and conductance. The delta layers can be varied in number, thickness, and dopant concentration to optimize... | 10/12/1999 |
| 5880516 | Semiconductor device utilizing a pedestal collector region and method of manufacturing the same A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitax... | 03/09/1999 |
| 5850099 | Thermally uniform transistor Generally, and in one form of the invention, a method for fabricating a transistor having a plurality of active regions comprising spacing or shaping the emitters 20 and 22, or gates, in a non-uniform manner to provide a substantially constant temperature... | 12/15/1998 |
| 5760457 | Bipolar transistor circuit element having base ballasting resistor A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and i... | 06/02/1998 |
| 5629547 | BICMOS process for counter doped collector A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ... | 05/13/1997 |
| 5596220 | Integrated lateral transistor with improved current amplification A method of manufacturing an integrated lateral transistor in which the depth and the doping level of the emitter region are such that the diffusion length of the minority carriers vertically injected into it is larger than or equal to the thickness of th... | 01/21/1997 |
| 5539233 | Controlled low collector breakdown voltage vertical transistor for ESD protection circuits An npn transistor having a low collector-base breakdown voltage. An emitter region (104, 106) of a first conductivity type is located in a semiconductor substrate (102). A base region (14) of a second conductivity type is located within the emitter region... | 07/23/1996 |
| 5444292 | Integrated thin film approach to achieve high ballast levels for overlay structures The ballast resistance of a semiconductor device is increased without decreasing the figure of merit of the device. The semiconductor device includes an emitter feeder, a first contact coupled to the emitter feeder, a second contact, a resistive medium co... | 08/22/1995 |
