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"What, sir, would you make a ship sail against the wind and currents by lighting a bonfire under her deck? I pray you, excuse me, I have not the time to listen to such nonsense."
Napoleon Bonaparte ; When told of the Robert Fulton steamboat
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| Number | Title | Issue Date |
| 8008747 | High power and high temperature semiconductor power devices protected by non-uniform ballasted sources This invention discloses a semiconductor power device disposed on a semiconductor substrate supporting an epitaxial layer as a drift region composed of an epitaxial layer. The semiconductor power device further includes a super-junction structure includes a pluralit... | 08/30/2011 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7247926 | High-frequency switching transistor A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area... | 07/24/2007 |
| 7230324 | Strobe light control circuit and IGBT device As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter termi... | 06/12/2007 |
| 7199447 | Angled implant to improve high current operation of bipolar transistors Method and apparatus for improving the high current operation of bipolar transistors while minimizing adverse affects on high frequency response are disclosed. A local implant to increase the doping of the collector at the collector to base interface is achieved by ... | 04/03/2007 |
| 7170223 | Emitter with dielectric layer having implanted conducting centers An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantu... | 01/30/2007 |
| 7163903 | Method for making a semiconductor structure using silicon germanium A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying t... | 01/16/2007 |
| 7148557 | Bipolar transistor and method for fabricating the same A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitiv... | 12/12/2006 |
| 7109534 | Transistor and electronic device The invention provides a transistor capable of achieving a higher speed although its construction is easy to manufacture without requiring wiring to intersect three-dimensionally even if unit elements of transistors are connected in parallel, and to provide an elect... | 09/19/2006 |
| 7105913 | Two-layer patterned resistor A technique for fabricating a patterned resistor on a substrate produces a patterned resistor (101, 801, 1001, 1324, 1374) including two conductive end terminations (110, 810, 1010) on the substrate, a pattern of first resistive material (120, 815, ... | 09/12/2006 |
| 7095084 | Emitter switching configuration and corresponding integrated structure An emitter switching configuration having at least one bipolar transistor and a MOS transistor having a common conduction terminal and a Zener diode inserted between a control terminal of the bipolar transistor and the common conduction terminal. A monolithic struct... | 08/22/2006 |
| 7084485 | Method of manufacturing a semiconductor component, and semiconductor component formed thereby A method of manufacturing a semiconductor component includes: providing a semiconductor substrate (210, 510); forming a trench (130, 430) in the semiconductor substrate to define a plurality of active areas separated from each other by the trench; form... | 08/01/2006 |
| 7064416 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 06/20/2006 |
| 6979883 | Integrated device in emitter-switching configuration and related manufacturing process An integrated device in emitter-switching configuration is described. The device is integrated in a chip of semiconductor material of a first conductivity type which has a first surface and a second surface opposite to each other. The device comprises a first transi... | 12/27/2005 |
| 6946720 | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for ea... | 09/20/2005 |
| 6943414 | Method for fabricating a metal resistor in an IC chip and related structure According to one exemplary embodiment, an integrated circuit chip comprises a first interconnect metal layer. The integrated circuit chip further comprises a first intermediate dielectric layer situated over the first interconnect metal layer. The integrated circuit... | 09/13/2005 |
| 6879024 | Strobe light control circuit and IGBT device As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter termi... | 04/12/2005 |
| 6768140 | Structure and method in an HBT for an emitter ballast resistor with improved characteristics According to one exemplary embodiment, a heterojunction bipolar transistor comprises an emitter. The heterojunction bipolar transistor further comprises a first emitter cap comprising a first high-doped layer, a low-doped layer, and a second high-doped layer, where ... | 07/27/2004 |
| 6762479 | Microwave array transistor for low-noise and high-power applications A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At ... | 07/13/2004 |
| 6734520 | Semiconductor component and method of producing it A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insu... | 05/11/2004 |
| 6656812 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral isolating region surrounding an upper part of the intrinsic collect... | 12/02/2003 |
| 6627925 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 09/30/2003 |
| 6455919 | Internally ballasted silicon germanium transistor A bipolar transistor is disclosed. The bipolar transistor comprises: a silicon substrate; a collector formed in the semiconductor substrate, a base formed over the collector, the base having an intrinsic base region and an extrinsic base region, the extri... | 09/24/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6303974 | Semiconductor chips encapsulated within a preformed sub-assembly In a housing of a semiconductor device there are provided a plurality of semiconductor chips captivated in a preformed sub-assembly and arranged to present contact areas for connection to anode and emitter electrodes of the semiconductor housing. Electric... | 10/16/2001 |
| 6246092 | High breakdown voltage MOS semiconductor apparatus A MOS type semiconductor apparatus is provided that includes a first MOS type semiconductor device through which main current flows, and a second MOS type semiconductor device through which current that is smaller than the main current flows. The first an... | 06/12/2001 |
| 6236071 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 05/22/2001 |
| 6133594 | Compound semiconductor device A compound semiconductor device having a mesa type heterojunction bipolar transistor comprises a collector layer of first conductivity type having a collector breakdown voltage of a predetermined magnitude, a base layer of second conductivity type formed ... | 10/17/2000 |
| 6130471 | Ballasting of high power silicon-germanium heterojunction biploar transistors A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector. Each of the bases is an alloy of silicon and germanium and ea... | 10/10/2000 |
| 6127723 | Integrated device in an emitter-switching configuration An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of th... | 10/03/2000 |
| 6081003 | Heterojunction bipolar transistor with ballast resistor A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor ଲ from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed b... | 06/27/2000 |
| 6043520 | III-V heterojunction bipolar transistor having a GaAs emitter ballast A hetero-junction bipolar transistor having high reliability wherein a ballast resistance is exactly controlled and deterioration in current stability is eliminated. A GaAs ballast resistor layer is provided in a hetero-junction bipolar transistor having ... | 03/28/2000 |
| 6013941 | Bipolar transistor with collector surge voltage protection A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bi... | 01/11/2000 |
| 6013942 | Bipolar transistor structure In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining suitable resistance and design variability. The emitters are spl... | 01/11/2000 |
| 5998855 | Bipolar power transistor with buried base and interdigitated geometry A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base-contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region dis... | 12/07/1999 |
| 5990539 | Transistor component having an integrated emitter resistor A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emit... | 11/23/1999 |
| 5939768 | Vertical bipolar power transistor with an integrated sensing circuit A vertical structure, integrated bipolar transistor incorporating a current sensing resistor, comprises a collector region, a base region overlying the collector region, and an emitter region over the base region. The emitter region comprises a buried reg... | 08/17/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5804867 | Thermally balanced radio frequency power transistor An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the... | 09/08/1998 |
| 5760457 | Bipolar transistor circuit element having base ballasting resistor A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and i... | 06/02/1998 |
