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| Number | Title | Issue Date |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7365397 | Semiconductor device The semiconductor device comprises a resistance element 26 formed of polysilicon film formed on a silicon substrate 10, which includes a resistor part 26a having a resistance value set at a prescribed value, contact parts 26b | 04/29/2008 |
| 7323762 | Semiconductor package substrate with embedded resistors and method for fabricating the same A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a plurality of resistor electrodes are formed in the fist circuit laye... | 01/29/2008 |
| 7268413 | Bipolar transistors with low-resistance emitter contacts Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching spe... | 09/11/2007 |
| 7250348 | Apparatus and method for packaging semiconductor devices using a patterned photo sensitive film to reduce stress buffering A method and apparatus for packaging semiconductor devices using patterned laminate films to reduce stress buffering. The method includes fabricating a semiconductor die having thin film resistors and bond pads formed on an active surface. A film layer is formed ont... | 07/31/2007 |
| 7180139 | Pixel structure A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally,... | 02/20/2007 |
| 7019337 | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device p... | 03/28/2006 |
| 6897545 | Lateral operation bipolar transistor and a corresponding fabrication process The transistor includes an emitter region 17 disposed in a first isolating well 11, 150 formed in a semiconductor bulk. An extrinsic collector region 16 is disposed in a second isolating well 3, 150 formed in the semiconductor bulk SB and... | 05/24/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6767781 | Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over porti... | 07/27/2004 |
| 6703685 | Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo... | 03/09/2004 |
| 6690082 | High dopant concentration diffused resistor and method of manufacture therefor The present invention provides a high dopant concentration diffused resistor, a method of manufacture therefor, and an integrated circuit including the same. In one embodiment of the invention, the high dopant concentration diffused resistor includes a do... | 02/10/2004 |
| 6656812 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral isolating region surrounding an upper part of the intrinsic collect... | 12/02/2003 |
| 6482710 | Bipolar transistor and manufacting method thereof A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si--Ge and a base leading-out electrode are connected via a link base made of polycrystal Si--Ge by doping at high concentration, furt... | 11/19/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6211562 | Homojunction semiconductor devices with low barrier tunnel oxide contacts A homojunction bipolar transistor with performance characteristics similar to more costly heterojunction or retrograde base transistors. The high emitter resistivity found in prior homojunction devices is circumvented using a low work function material la... | 04/03/2001 |
| 6130471 | Ballasting of high power silicon-germanium heterojunction biploar transistors A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector. Each of the bases is an alloy of silicon and germanium and ea... | 10/10/2000 |
| 6013942 | Bipolar transistor structure In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining suitable resistance and design variability. The emitters are spl... | 01/11/2000 |
| 5990539 | Transistor component having an integrated emitter resistor A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emit... | 11/23/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5821602 | RF power transistor having improved stability and gain Increased gain and improved stability are realized in using resistive emitter ballasting by including integrated capacitive elements in parallel with the resistive elements in the emitter circuit. A feature of the invention is an integrated capacitor stru... | 10/13/1998 |
| 5798561 | Bipolar transistor with polysilicon base A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first semiconductor active region of a first conductivity type in its insi... | 08/25/1998 |
| 5760457 | Bipolar transistor circuit element having base ballasting resistor A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and i... | 06/02/1998 |
| 5684326 | Emitter ballast bypass for radio frequency power transistors An apparatus and method are provided for bypassing the emitter ballast resistors of a power transistor, thereby increasing transistor gain. In a power transistor of the interdigitated type, bypassing the emitter ballast resistors requires bypassing each i... | 11/04/1997 |
| 5594272 | Bipolar transistor with base and emitter contact holes having shorter central portions An insulating film formed on a base region is patterned to form emitter contact holes and base contact holes arranged alternately in such a manner that those contact holes are short in the center portion and become longer toward the peripheral portions, a... | 01/14/1997 |
| 5510642 | Semiconductor device An insular shaped polycrystalline silicon film is formed by adhering its entire bottom face to the surface of a insulation film which is formed on the main face of a silicon substrate. A resistance element which contains designated impurities is formed in... | 04/23/1996 |
| 5444292 | Integrated thin film approach to achieve high ballast levels for overlay structures The ballast resistance of a semiconductor device is increased without decreasing the figure of merit of the device. The semiconductor device includes an emitter feeder, a first contact coupled to the emitter feeder, a second contact, a resistive medium co... | 08/22/1995 |
| 5374844 | Bipolar transistor structure using ballast resistor A transistor structure incorporates a polysilicon layer which is doped with N-type dopants and is used as an emitter ballast resistor in an array of NPN transistors. In one embodiment, the polysilicon layer is also used as a diffusion source to form N-typ... | 12/20/1994 |
| 5298785 | Semiconductor device A multi-emitter type semiconductor device having multiple transistors coupled in parallel which utilize a common substrate. Between a selected emitter electrode and a base contact, a stabilizing resistive region is formed in the common substrate. In order... | 03/29/1994 |
| 4680608 | Semiconductor device This application describes a semiconductor device having a power amplifier pattern consisting of a plurality of parallel-connected transistor unit cells with emitters thereof being arrayed like meshes, wherein the width of the emitter of each transistor u... | 07/14/1987 |
| 4626886 | Power transistor The invention relates to a power transistor with a semiconductor body. When shutting off a power transistor, local fusing of the semiconductor body may occur, if a characteristic power loss is exceeded for a certain period of time (second breakdown). This... | 12/02/1986 |
| 4411708 | Method of making precision doped polysilicon vertical ballast resistors by multiple implantations The structure and associated fabrication processes disclosed provide a resistive element directly over a specific semiconductor region. Use of such a structure in a high current device ballasts emitter fingers to improve the maximum current flow of the de... | 10/25/1983 |
| 4243998 | Safety circuit for a semiconductor element The negative temperature coefficient effect, which results in destructive current flow above a certain temperature in a semiconductor device is counteracted by a layer of conductive material that has low resistance at normal temperatures but has a positiv... | 01/06/1981 |
| 4126879 | Semiconductor device with ballast resistor adapted for a transcalent device An improvement for a transcalent semiconductor device includes a semiconductor ballast resistor in contact with the emitter regions of a semiconductor transistor. The semiconductor transistor with the ballast resistor in contact therewith is sandwiched be... | 11/21/1978 |
| 4008484 | Semiconductor device having multilayered electrode structure A semiconductor device wherein two conductive layers, insulated from one another, are laminated on one surface of a semiconductor wafer is described. The two conductive layers are in ohmic contact with two regions of the opposite conduction type to one an... | 02/15/1977 |
