Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 7732896 | Semiconductor apparatus and method of manufacturing the same A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows therein according to the control signal, and a plurality of substrate cond... | 06/08/2010 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7235860 | Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 06/26/2007 |
| 7202743 | High frequency amplifier An emitter of a transistor (1) for high frequency amplification and a cathode of a diode (5) for generating reference voltage are grounded via an inductance (20). Anode electric potential of the diode (5) decreases with increase in output... | 04/10/2007 |
| 7196889 | Zener triggered overvoltage protection device An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has... | 03/27/2007 |
| 7173293 | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, a... | 02/06/2007 |
| 7079004 | Precision thin film AC voltage divider A precision AC input voltage divider on a substrate is printed as a serpentine pattern for a thin line of resistive material. Bothersome original “bad” stray capacitances to a ground, particularly those to or from the middle of the serpentine, are effectively re... | 07/18/2006 |
| 7064416 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 06/20/2006 |
| 7053463 | High-voltage integrated vertical resistor and manufacturing process thereof The manufacturing process comprises the steps of growing epitaxially a first layer from a semiconductor material substrate, forming in the first layer a first and a second buried region spaced from one another and having conductivity of the type opposite that of the... | 05/30/2006 |
| 7038327 | Anisotropic conductive film bonding pad Enhanced ACF bonding pads for use in conjunction with anisotropic conductive film (ACF) in electronic devices, such as, liquid crystal display panels and plasma display panels have at least two finger-like portions. Such bonding pads, typically provided on a flexibl... | 05/02/2006 |
| 6974969 | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer A high performance bipolar transistor device is realized from a series of layers formed on a substrate, the series of layers including a first set of one or more layers each comprising n-type dopant material, a second set of layers forming a p-type modulation doped ... | 12/13/2005 |
| 6969903 | High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected i... | 11/29/2005 |
| 6946720 | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for ea... | 09/20/2005 |
| 6914280 | Switching circuit device Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The ... | 07/05/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6803643 | Compact non-linear HBT array HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-l... | 10/12/2004 |
| 6798019 | IGBT with channel resistors An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resi... | 09/28/2004 |
| 6762479 | Microwave array transistor for low-noise and high-power applications A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At ... | 07/13/2004 |
| 6656812 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral isolating region surrounding an upper part of the intrinsic collect... | 12/02/2003 |
| 6642553 | Bipolar transistor and method for producing same The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential ... | 11/04/2003 |
| 6627925 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 09/30/2003 |
| 6483170 | RF power transistor A method for manufacturing a silicon bipolar power high frequency transistor device is disclosed. A transistor device according to the present method is also disclosed. The transistor device assures conditions for maintaining a proper BVCER to ... | 11/19/2002 |
| 6455919 | Internally ballasted silicon germanium transistor A bipolar transistor is disclosed. The bipolar transistor comprises: a silicon substrate; a collector formed in the semiconductor substrate, a base formed over the collector, the base having an intrinsic base region and an extrinsic base region, the extri... | 09/24/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6236072 | Method and system for emitter partitioning for SiGe RF power transistors A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple... | 05/22/2001 |
| 6236071 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 05/22/2001 |
| 6130471 | Ballasting of high power silicon-germanium heterojunction biploar transistors A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector. Each of the bases is an alloy of silicon and germanium and ea... | 10/10/2000 |
| 6043520 | III-V heterojunction bipolar transistor having a GaAs emitter ballast A hetero-junction bipolar transistor having high reliability wherein a ballast resistance is exactly controlled and deterioration in current stability is eliminated. A GaAs ballast resistor layer is provided in a hetero-junction bipolar transistor having ... | 03/28/2000 |
| 6013941 | Bipolar transistor with collector surge voltage protection A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bi... | 01/11/2000 |
| 6013942 | Bipolar transistor structure In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining suitable resistance and design variability. The emitters are spl... | 01/11/2000 |
| 5998855 | Bipolar power transistor with buried base and interdigitated geometry A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base-contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region dis... | 12/07/1999 |
| 5990539 | Transistor component having an integrated emitter resistor A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emit... | 11/23/1999 |
| 5939739 | Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors The present invention relates to a heterojunction bipolar transistor structure having a device mesa 401 with a collector region 402, a base region 403 and an emitter region 404. An emitter metal layer 405 is connected to a ballast resistor 406 which in tu... | 08/17/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5841184 | Integrated emitter drain bypass capacitor for microwave/RF power device applications A silicon bipolar junction transistor in integrated form is disclosed having a ballast resistance integrated onto a silicon chip. This resistance is for the purpose of thermal stability. In addition, a bypass capacitance circuit is placed in parallel with... | 11/24/1998 |
| 5821602 | RF power transistor having improved stability and gain Increased gain and improved stability are realized in using resistive emitter ballasting by including integrated capacitive elements in parallel with the resistive elements in the emitter circuit. A feature of the invention is an integrated capacitor stru... | 10/13/1998 |
| 5804867 | Thermally balanced radio frequency power transistor An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the... | 09/08/1998 |
| 5798561 | Bipolar transistor with polysilicon base A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first semiconductor active region of a first conductivity type in its insi... | 08/25/1998 |
