Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 8168974 | Field effect transistor A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, ... | 05/01/2012 |
| 7868326 | Field effect transistor A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, ... | 01/11/2011 |
| 7863611 | Integrated circuits utilizing amorphous oxides Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used fo... | 01/04/2011 |
| 7375373 | Thin film transistor array panel A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, d... | 05/20/2008 |
| 7358533 | Electronic device, thin film transistor structure and flat panel display having the same The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a length direction of at least ... | 04/15/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7339248 | Self-adjusting serial circuit of thin layers and method for production thereof The invention relates to a self-adjusting serial connection of thin layers and a method for the production thereof. The invention is characterized in that electrically conducting conductor tracks (20) are applied to a substrate (10), whereupon several ... | 03/04/2008 |
| 7326993 | Nonvolatile semiconductor memory and method for fabricating the same A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first sem... | 02/05/2008 |
| 7314784 | Thin film transistor and manufacturing method thereof A channel-length of a TFT can be controlled with higher reproducibility, and a short channel-length of the TFT can be manufactured. Further, a structure of the TFT having an improved current-voltage characteristic is provided. A thin film transistor has a lamination... | 01/01/2008 |
| 7208355 | Semiconductor device and method for preparing the same A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor a... | 04/24/2007 |
| 7179733 | Method of forming contact holes and electronic device formed thereby In a method of forming contact holes without using a vacuum device, a resist film at positions corresponding to contact hole forming regions above a source region 16, a drain region 18 and a gate electrode 34 of a polysilicon film 14, is ... | 02/20/2007 |
| 7166861 | Thin-film transistor and method for manufacturing the same The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and... | 01/23/2007 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7145175 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 12/05/2006 |
| 7138682 | Organic thin-film transistor and method of manufacturing the same A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insula... | 11/21/2006 |
| 7136128 | Liquid crystal electro-optical device A brighter active matrix type liquid crystal electro-optical device with a higher contrast, yet having a wider visual angle is realized, said liquid crystal electro-optical device comprises a liquid crystal layer and means for applying an electric field to the liqui... | 11/14/2006 |
| 7112545 | Passivation of material using ultra-fast pulsed laser The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer. ... | 09/26/2006 |
| 7041608 | Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices A method of making an electronic device in which a conductive electrode has been formed over a substrate including using a liquid to clean the conductive electrode, heating in a processing station the conductive electrode to a temperature which dries the conductive ... | 05/09/2006 |
| 7023015 | Thin-film semiconductor device and liquid crystal display A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of the plurality of thin-film tr... | 04/04/2006 |
| 6949468 | Method of preventing cathode of active matrix organic light emitting diode from breaking A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a... | 09/27/2005 |
| 6930326 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 08/16/2005 |
| 6902440 | Method of forming a low K dielectric in a semiconductor manufacturing process A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surfac... | 06/07/2005 |
| 6885028 | Transistor array and active-matrix substrate A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive... | 04/26/2005 |
| 6753550 | Liquid crystal display device having a thin film transistor element including an amorphous film containing a low-defect density layer and a high-defect densisty layer The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2, a gate... | 06/22/2004 |
| 6737676 | Gate insulated field effect transistor and method of manufacturing the same A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity ... | 05/18/2004 |
| 6734499 | Operation method of semiconductor devices An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is disposed between said gate elect... | 05/11/2004 |
| 6664566 | Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 12/16/2003 |
| 6657268 | Metal gate stack with etch stop layer having implanted metal species A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etchin... | 12/02/2003 |
| 6600196 | Thin film transistor, and manufacturing method thereof The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14 and a drain electr... | 07/29/2003 |
| 6576925 | Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invention is directed to... | 06/10/2003 |
| 6570203 | Semiconductor device and method of manufacturing the same There is provided a semiconductor device which comprises a capacitor including a lower electrode, a dielectric film, and an upper electrode, a first protection film formed on the capacitor, a first wiring formed on the first protection film, a first insul... | 05/27/2003 |
| 6562645 | Method of fabricating fringe field switching mode liquid crystal display Disclosed is a method of fabricating fringe field switching mode liquid crystal display by forming a gate bus line and a common electrode line on a lower substrate in parallel with each other; forming a gate insulating layer on the lower substrate; formin... | 05/13/2003 |
| 6559520 | Siloxan polymer film on semiconductor substrate A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has --SiR2 O-- repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistan... | 05/06/2003 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6444513 | Metal gate stack with etch stop layer having implanted metal species A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etchin... | 09/03/2002 |
| 6437368 | Thin film transistor An Ta film for use in forming a source electrode and a drain electrode and an amorphous silicon film for use in forming an amorphous silicon semiconductor layer with impurity are continuously etched without setting an etching selectivity ratio. As a resul... | 08/20/2002 |
| 6362493 | Field-effect transistor and fabrication method thereof and image display apparatus An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, which is formed togeth... | 03/26/2002 |
| 6346716 | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 02/12/2002 |
| 6310363 | Thin-film transistor and semiconductor device using thin-film transistors with N and P impurities in the source and drain regions In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active... | 10/30/2001 |
