Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7652350 | Semiconductor device A semiconductor device including a horizontal unit semiconductor element, the horizontal unit semiconductor element including: a) a semiconductor substrate of a first conductivity type; b) a semiconductor region of a second conductivity type formed on the semiconduc... | 01/26/2010 |
| 7615846 | Semiconductor device An emitter layer is provided in stripes in a direction orthogonal to an effective gate trench region connected to a gate electrode and a dummy trench region isolated from the gate electrode. A width of the emitter layer is determined to satisfy a predetermined relat... | 11/10/2009 |
| 7411304 | Semiconductor interconnect having conductive spring contacts An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on a semiconductor component. Each interconnect contact includes a compliant conductive layer ... | 08/12/2008 |
| 7362166 | Apparatus for polarity-inversion-protected supplying of an electronic component with an intermediate voltage from a supply voltage The apparatus for polarity-inversion-protected supplying of an electronic component with an intermediate voltage from a supply voltage has a first transistor connected between a terminal for the supply voltage and the electric component, so that a path between a sou... | 04/22/2008 |
| 7319264 | Semiconductor device A semiconductor device has a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof. The semiconductor device includes a first main electrode provided on the front surface, a second main electrode provided on a back surfa... | 01/15/2008 |
| 7282771 | Structure and method for latchup suppression A method and structure for an integrated circuit comprising a substrate of a first polarity, a merged triple well region of a second polarity and a doped region of the second polarity abutting the well region. The doped region is adapted to suppress latch-up in the ... | 10/16/2007 |
| 7282997 | Thermal coupling device A micro-electronic power amplifier that defines a uniform thermal impedance includes an output stage including a single transistor array including a plurality of emitter leads and a single thermal coupling device that thermally couples together each of the emitter l... | 10/16/2007 |
| 7263759 | Methods of manufacturing and testing bonding wires A method of making and testing an electronic device that includes providing first and second external pins, first and second pads on the substrate connected to the first external pin by respective bonding wires, and third and fourth pads on the substrate connected t... | 09/04/2007 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7235860 | Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 06/26/2007 |
| 7226835 | Versatile system for optimizing current gain in bipolar transistor structures Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406 | 06/05/2007 |
| 7217975 | Lateral type semiconductor device A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apa... | 05/15/2007 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe bas... | 02/06/2007 |
| 7135756 | Array of cells including a selection bipolar transistor and fabrication method thereof A cell array is formed by a plurality of cells each including a selection bipolar transistor and a storage component. The cell array is formed in a body including a common collector region of P type; a plurality of base regions of N type, overlying the common collec... | 11/14/2006 |
| 7112537 | Method of fabricating interconnection structure of semiconductor device A method of fabricating an interconnection structure of a semiconductor device includes the steps of successively depositing an etch-stop layer and an intermetal insulating layer on a semiconductor substrate, forming a sacrificial insulating layer on the intermetal ... | 09/26/2006 |
| 7109589 | Integrated circuit with substantially perpendicular wire bonds An integrated circuit comprises an integrated circuit package and a plurality of circuit elements disposed within the integrated circuit package. A plurality of wire bonds provide connections for at least one of the circuit elements. At least one wire bond in a firs... | 09/19/2006 |
| 7071514 | Electrostatic discharge protection device A compact ESD protection device is described that uses the reverse breakdown voltage of a base-emitter junction as a trigger diode to switch a transistor that shunts the forward bias ESD current to ground. The trigger diode in series with a leakage diode provides a ... | 07/04/2006 |
| 7023029 | Complementary vertical SCRs for SOI and triple well processes In an ESD protection device using a SCR-like structure, a vertical device is provided that is highly robust and easily allows the triggering voltage to be adjusted during manufacture. Furthermore it is implementable in complementary form based on PNP and NPN BJT str... | 04/04/2006 |
| 6979883 | Integrated device in emitter-switching configuration and related manufacturing process An integrated device in emitter-switching configuration is described. The device is integrated in a chip of semiconductor material of a first conductivity type which has a first surface and a second surface opposite to each other. The device comprises a first transi... | 12/27/2005 |
| 6945466 | PC adapter cards and method of manufacturing the same A method of manufacturing a mini-card with a semiconductor memory device includes the steps of (a) providing an array of substrates including a plurality of individual substrates; (b) mounting a semiconductor memory device on each of the individual substrates formin... | 09/20/2005 |
| 6930373 | Circuit arrangement The circuit has a power stage (LE) with heat generating components mounted around at least one component that generates less heat mounted in an inner region. The heat generating components are connected to at least one conducting metal body (K1) that is mount... | 08/16/2005 |
| 6917061 | AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer ... | 07/12/2005 |
| 6853053 | BJT based ESD protection structure with improved current stability In a BJT ESD protection structure, the ESD current density is stabilized by partially blocking one or more of the emitter and n+ collector, sinker, and n-buried layer to define a comb-like structure for the partially blocked regions. ... | 02/08/2005 |
| 6798019 | IGBT with channel resistors An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resi... | 09/28/2004 |
| 6784499 | Semiconductor device serving as a protecting element The protecting element includes an NPN transistor having an emitter connected to an input/output terminal and a collector and a base connected to a ground terminal. The input/output terminal has the possibility of receiving a surge voltage. The input/output terminal... | 08/31/2004 |
| 6762479 | Microwave array transistor for low-noise and high-power applications A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At ... | 07/13/2004 |
| 6740914 | FET circuit block with reduced self-heating A field effect transistor (FET) is disclosed that includes a heat spreader adapted to reduce the thermal resistance and channel operating temperature of a field effect transistor used in a circuit block susceptible to self-heating effects. In one embodiment, regulat... | 05/25/2004 |
| 6724067 | Low stress thermal and electrical interconnects for heterojunction bipolar transistors A thermal and electrical interconnect for heterojunction bipolar transistors is disclosed wherein the interconnect is essentially comprised of gold and in thermal and electrical contact with each of the interdigitated emitter fingers and is capable of transporting h... | 04/20/2004 |
| 6700226 | Multi-emitter bipolar transistor for bandgap reference circuits A transistor includes a substrate region (14) of a first type (P) of conductivity in a semiconductor material layer of the same type (P) of conductivity, at least a first contact region (13) of the first type (P+) of conductivity inside the substrate regi... | 03/02/2004 |
| 6677625 | Bipolar transistor The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on the collector layer; and a semiconductor layer deposited on... | 01/13/2004 |
| 6674147 | Semiconductor device having a bipolar transistor structure Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+ -type region. Further, pr... | 01/06/2004 |
| 6600179 | Power amplifier with base and collector straps A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrical... | 07/29/2003 |
| 6577200 | High-frequency semiconductor device A high-frequency semiconductor amplifier circuit minimizing deterioration of high-frequency characteristics and attaining high thermal stability. A driver stage of a power amplifier has a multi-stage configuration with multi-finger HBTs connected in shunt... | 06/10/2003 |
| 6483188 | Rf integrated circuit layout A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a ... | 11/19/2002 |
| 6476495 | Transistor which can minimize the DC resistance of the wiring and lead formed on a semiconductor chip A semiconductor chip 10 is provided to form a large number of cells constituting transistor units arranged on a planar and rectangular semiconductor substrate. On the front surface of the semiconductor chip 10, an emitter electrode 1 to be connected to an... | 11/05/2002 |
| 6445068 | Semiconductor module A plurality of MOS transistors are arranged on the top surface of a conductor substrate which is a drain electrode. The drain contact of each MOS transistor is connected to the conductor substrate. The source contact of each MOS transistor is connected to... | 09/03/2002 |
| 6236072 | Method and system for emitter partitioning for SiGe RF power transistors A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple... | 05/22/2001 |
| 6114746 | Vertical PNP transistor and relative fabrication method A vertical PNP transistor integrated in a semiconductor material wafer having an N type substrate and an N type epitaxial layer forming a surface. The transistor has a P type buried collector region astride the substrate and the epitaxial layer; a collect... | 09/05/2000 |
| 6087721 | Semiconductor device with a high-frequency bipolar transistor on an insulating substrate A bipolar transistor (3) is provided with a first main surface (4) in contact with a conductive mounting surface (2), and with an opposed second main surface (12) having connection pads (5, 6, 40) for an emitter, base, and collector. The lateral dimension... | 07/11/2000 |
| 6087675 | Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film The present invention relates to a contact window structure having an insulation layer extending over an electrically conductive region. The insulation layer further has a plurality of contact windows which are filled with electrically conductive layers s... | 07/11/2000 |
