Class 257/578 - With enlarged emitter area (e.g., power device)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device has relatively enlarged
No. of patents: 145
Last issue date: 12/13/2011

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Number	Title	Issue Date
8076755	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside elect...	12/13/2011
8008746	Semiconductor device An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is in contact with the emitter electrode, and a p+-...	08/30/2011
7723824	Methodology for recovery of hot carrier induced degradation in bipolar devices A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avala...	05/25/2010
7528461	Bipolar power transistor and related integrated device with clamp means of the collector voltage A bipolar power transistor does not include integration of a Zener diode electrically connected between the base and collector for limiting the collector voltage. The power transistor is formed in a substrate, and includes an equalization diffusion and an auxiliary ...	05/05/2009
7489018	Transistor A transistor comprises: an insulating layer; a semiconductor layer provided on a major surface of the insulating layer; a gate insulating layer provided on the base region; and a gate electrode provided on the gate insulating layer. The semiconductor layer has a sou...	02/10/2009
7414298	Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ...	08/19/2008
7394113	Self-alignment scheme for a heterojunction bipolar transistor Embodiments herein present a structure, method, etc. for a self-alignment scheme for a heterojunction bipolar transistor (HBT). An HBT is provided, comprising an extrinsic base, a first self-aligned silicide layer over the extrinsic base, and a nitride etch stop lay...	07/01/2008
7385273	Power semiconductor device A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a...	06/10/2008
7368361	Bipolar junction transistors and method of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti...	05/06/2008
7358545	Bipolar junction transistor A bipolar junction transistor is provided. A p-type well region surrounds an n-type emitter and connects with the bottom of the emitter to serve as a base. A p-type base pick-up region connects with the base and surrounds the emitter. An n-type deep well, connected ...	04/15/2008
7345351	Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device...	03/18/2008
7327012	Bipolar Transistor Devices A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ...	02/05/2008
7319264	Semiconductor device A semiconductor device has a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof. The semiconductor device includes a first main electrode provided on the front surface, a second main electrode provided on a back surfa...	01/15/2008
7302982	Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the...	12/04/2007
7294884	Passivation of power semiconductor device A vertical power semiconductor device comprises a substrate including a first layer that is a first conductivity type. A first conductive region is provided proximate an upper surface of the substrate, the first conductive region being a second conductivity type tha...	11/13/2007
7267287	IC card An IC card capable of reinforcing the prevention of the electrostatic damage without causing a rise in the cost of a semiconductor integrated circuit chip. The semiconductor integrated circuit chip (2) is mounted on a card substrate (1), and plural con...	09/11/2007
7253498	Bipolar transistor with geometry optimized for device performance, and method of making same The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a...	08/07/2007
7242012	Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	07/10/2007
7239007	Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall...	07/03/2007
7235860	Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall...	06/26/2007
7229855	Process for assembling a double-sided circuit component A process for producing a circuit component having a double-sided circuit device between a pair of substrates. The process entails depositing a solder material on contact areas on surfaces of the substrates, placing a first of the substrates within a cavity in a rec...	06/12/2007
7226835	Versatile system for optimizing current gain in bipolar transistor structures Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406	06/05/2007
7224052	IC card with controller and memory chips An IC card capable of reinforcing the prevention of the electrostatic damage without causing a rise in the cost of a semiconductor integrated circuit chip. The semiconductor integrated circuit chip (2) is mounted on a card substrate (1), and plural con...	05/29/2007
7223696	Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	05/29/2007
7193239	Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red...	03/20/2007
7176545	Apparatus and methods for maskless pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	02/13/2007
7154168	Flip chip in leaded molded package and method of manufacture thereof A chip device that includes a leadframe, a die and a mold compound. The backside of the die is metallized and exposed through a window defined within a mold compound that encapsulates the die when it is coupled to the leadframe. Leads on the leadframe are coupled to...	12/26/2006
7143660	Method and system for processing semiconductor wafers A method for processing semiconductor wafers includes processing a semiconductor wafer in a processing chamber having upper and lower chambers, decoupling the upper chamber from the lower chamber, cleaning the upper chamber, determining, while decoupled, that a leak...	12/05/2006
7141188	Organic compositions The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two ...	11/28/2006
7138295	Method of information processing using three dimensional integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red...	11/21/2006
7122879	Bipolar transistor with high dynamic performances A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy. ...	10/17/2006
7112868	IGBT with monolithic integrated antiparallel diode An IGBT with monolithic integrated antiparallel diode has one or more emitter short regions forming the diode cathode in the region of the high-voltage edge. The p-type emitter regions of the IGBT have no emitter shorts. The counterelectrode of the diode exclusively...	09/26/2006
7109567	Semiconductor device and method of manufacturing such device The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2), and a collector region (3), which are provided with respectively a first, a second, and a...	09/19/2006
7105861	Electronic device contact structures Electronic device contact structures are disclosed. ...	09/12/2006
7091578	Bipolar junction transistors and methods of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti...	08/15/2006
7034785	Color liquid crystal display In an ECB LCD, in which a liquid crystal layer enclosed between a pair of substrates is driven based on R, G, B signals so that transmittance of R, G, B light components at the liquid crystal layer is controlled for color display, the voltage levels of the liquid cr...	04/25/2006
7029924	Buffered-layer memory cell A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a me...	04/18/2006
7015561	Active rectifier A switching circuit has an active switch, a controller, and at least two terminals. The at least two terminals include two current control terminals for connection at two locations in another circuit. The controller is configured to turn the active switch off to blo...	03/21/2006
7005723	Bipolar transistor and method of producing same In a method of producing a bipolar transistor, a semiconductor substrate having a substrate surface is provided. A base-terminal layer for providing a base terminal is formed on the substrate surface, and an emitter window having a wall area is formed in the base-te...	02/28/2006
6998699	Redundant interconnect high current bipolar device and method of forming the device A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of the emitte...	02/14/2006

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Class 257/578 - With enlarged emitter area (e.g., power device)