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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 8164162 | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad A structure of power semiconductor device integrated with clamp diodes sharing same gate metal pad is disclosed. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon. ... | 04/24/2012 |
| 8102025 | Semiconductor device having IGBT and diode A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode ... | 01/24/2012 |
| 8022505 | Semiconductor device structure and integrated circuit therefor A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor dev... | 09/20/2011 |
| 8013423 | Method for fabricating a metal interconnection using a dual damascene process and resulting semiconductor device A semiconductor device includes an interlayer insulating layer including a plurality of trenches connecting to a number of via holes formed on a semiconductor substrate including lower interconnections, wherein widths of the trenches are greater than widths of the v... | 09/06/2011 |
| 7973387 | Insulated gate bipolar transistor An insulated gate bipolar transistor includes bump pad connectors to provide thermal contact with a heat spreader for dissipating heat away form the insulated gate bipolar transistor. ... | 07/05/2011 |
| 7936047 | Method for realizing a contact of an integrated well in a semiconductor substrate, in particular for a base terminal of a bipolar transistor, with enhancement of the transistor performances A method realizes a contact of a first well of a first type of dopant integrated in a semiconductor substrate next to a second well of a second type of dopant and forming with it a parasitic diode. The method comprises: formation of the first well; formation of the ... | 05/03/2011 |
| 7932583 | Reduced free-charge carrier lifetime device According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zon... | 04/26/2011 |
| 7911032 | Method for generating a signal representative of the current delivered to a load by a power device and relative power device An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes ... | 03/22/2011 |
| 7755167 | Semiconductor device including switching element and two diodes A semiconductor device includes a transistor, a first diode, and a second diode. A collector of the transistor and a cathode of the first diode are electrically connected. The collector of the transistor and a cathode of the second diode are electrically connected, ... | 07/13/2010 |
| 7741700 | Transistor with heat dissipating means A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and... | 06/22/2010 |
| 7622789 | Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer tr... | 11/24/2009 |
| 7602045 | Semiconductor device and inverter device using the same In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode... | 10/13/2009 |
| 7576410 | Power transistor A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that ... | 08/18/2009 |
| 7466009 | Method for reducing dislocation threading using a suppression implant The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substr... | 12/16/2008 |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7381997 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 06/03/2008 |
| 7358545 | Bipolar junction transistor A bipolar junction transistor is provided. A p-type well region surrounds an n-type emitter and connects with the bottom of the emitter to serve as a base. A p-type base pick-up region connects with the base and surrounds the emitter. An n-type deep well, connected ... | 04/15/2008 |
| 7358592 | Semiconductor device A semiconductor integrated circuit device having a metal thin-film resistance includes a lower insulation film formed over a semiconductor substrate via another lawyer, a metal interconnection pattern formed on the lower insulation film, an underlying insulation fil... | 04/15/2008 |
| 7358778 | Voltage detection circuit, semiconductor device, method for controlling voltage detection circuit A voltage detection circuit for accurately detecting a voltage while suppressing the voltage fluctuation due to the off-leak current of a transistor. The voltage detection circuit includes first and second capacitors, first and second transistors, a comparator, and ... | 04/15/2008 |
| 7342294 | SOI bipolar transistors with reduced self heating A bipolar transistor includes a collector located over a substrate; and a heat conductive path connecting the substrate to the collector. The heat conductive path is filled with a heat conductive material such as metal or polysilicon. In one embodiment the heat cond... | 03/11/2008 |
| 7339254 | SOI substrate for integration of opto-electronics with SiGe BiCMOS According to an exemplary embodiment, a structure includes a silicon-on-insulator substrate including a buried oxide layer situated over a bulk silicon substrate and a silicon layer situated over the buried oxide layer. The structure further includes a trench formed... | 03/04/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7310266 | Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing inform... | 12/18/2007 |
| 7309907 | Semiconductor device card methods of initializing checking the authenticity and the identity thereof The semiconductor device (11) of the invention comprises a circuit that is covered by a passivation structure. It is provided with a first security element (12) that comprises a local area of the passivation structure and which has a first impedance. P... | 12/18/2007 |
| 7307313 | Semiconductor device including a vertical field effect transistor, having trenches, and a diode A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface ... | 12/11/2007 |
| 7291870 | Electrostatic protection circuit An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and a... | 11/06/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7256434 | Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes revers... | 08/14/2007 |
| 7256463 | Semiconductor device having SOI structure including a load resistor of an sram memory cell It is an object to provide a semiconductor device having an SOI structure in which an electric potential of a body region in an element formation region isolated by a partial isolation region can be fixed with a high stability. A MOS transistor comprising a source r... | 08/14/2007 |
| 7244992 | Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, and a first doped region formed in the second w... | 07/17/2007 |
| 7235852 | Integrated variable optical attenuator A variable optical attenuator. A PIN structure is integrated with an optical detector such as a PIN diode or an APD diode. When the PIN structure is forward biased, the light signal is not affected and is detected by the optical detector. When the PIN structure is r... | 06/26/2007 |
| 7226835 | Versatile system for optimizing current gain in bipolar transistor structures Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406 | 06/05/2007 |
| 7208814 | Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa... | 04/24/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7196369 | Plasma damage protection circuit for a semiconductor device A protection device and a method for manufacturing integrated circuit devices protect against plasma charge damage, and related charge damage during manufacture. The protection device comprises a dynamic threshold, NMOS/PMOS pair having their respective gate termina... | 03/27/2007 |
| 7196889 | Zener triggered overvoltage protection device An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has... | 03/27/2007 |
| 7186611 | High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs... | 03/06/2007 |
| 7170090 | Method and structure for testing metal-insulator-metal capacitor structures under high temperature at wafer level A test structure and a test methodology are provided for testing metal-insulator-metal (MIM) capacitor structures under high temperatures at the wafer level. The test structure includes a resistor formed on a region of dielectric isolation material formed in a semic... | 01/30/2007 |
| 7148557 | Bipolar transistor and method for fabricating the same A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitiv... | 12/12/2006 |
