Class 257/573 - With housing or contact structure or configuration

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein a housing or electrical contact structure
No. of patents: 26
Last issue date: 10/06/2009

Number	Title	Issue Date
7598593	N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode The present invention provides a constitution of n-type ohmic electrode suitable for n-type group III nitride semiconductor, and a forming method thereof for providing low contact resistivity. The n-type ohmic electrode is provided to comprise an alloy of aluminum a...	10/06/2009
7414262	Electronic devices and methods for forming the same Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a ...	08/19/2008
7397108	Bipolar transistor A monolithically integrated bipolar transistor has an SOI substrate, a collector region in the SOI substrate, a base layer region on top of and in contact with the collector region, and an emitter layer region on top of and in contact with the base layer region, whe...	07/08/2008
7122879	Bipolar transistor with high dynamic performances A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy. ...	10/17/2006
7118998	Method of forming a conductive structure A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming a plurality of trenches between the first and second regions, implanting a dopant into the bott...	10/10/2006
7067857	Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, ...	06/27/2006
7061074	Visible imaging device using Darlington phototransistors The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circu...	06/13/2006
6984871	Semiconductor device with high structural reliability and low parasitic capacitance A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a coll...	01/10/2006
6930010	Method of forming a conductive structure in a semiconductor material A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming one or more trenches between the first and second regions, and implanting a dopant into the bot...	08/16/2005
6703685	Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo...	03/09/2004
6624502	Method and device for limiting the substrate potential in junction isolated integrated circuits A substrate potential limiting device for an integrated circuit that includes a semiconductor substrate is provided. The device includes at least one unidirectional element connected between a substrate contact on the semiconductor substrate and a referen...	09/23/2003
6593604	Heterojunction bipolar transistor, manufacturing method therefor, and communication device therewith An emitter of a heterojunction bipolar transistor has a double-layer protrusion formed of a first emitter layer and a second emitter layer and protruded outside an external base region. The protrusion of 50 nm in total thickness is enough to prevent damag...	07/15/2003
6552429	Power switching semiconductor device with suppressed oscillation A wiring pattern (26) or (27) and conductor wires (W1, W2) or (W3, W4) not relaying a wiring pattern (22) or (23) fed with an emitter current connect emitter electrodes of a plurality of IGBTs (3) connected in parallel with each other. Thus, oscillation a...	04/22/2003
6215160	Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the same A semiconductor device with a reduced insulating capacitance between an emitter electrode and a base layer, and a manufacturing method thereof are disclosed. In the semiconductor device, at least first and second insulating layers are interposed between t...	04/10/2001
6177717	Low-noise vertical bipolar transistor and corresponding fabrication process The intrinsic collector of a vertical bipolar transitor is grown epitaxially on an extrinsic collector layer buried in a semiconductor substrate. A lateral isolation region surrounds the upper part of the intrinsic collector and an offset extrinsic collec...	01/23/2001
6051871	Heterojunction bipolar transistor having improved heat dissipation A heterojunction bipolar transistor has a mesa including collector 604, base 603, and emitter 602 layers. The mesa has first and second sidewalls 606. An improved heat dissipation structure comprises a layer of electrically insulative and thermally conduc...	04/18/2000
5969399	High gain current mode photo-sensor A high gain photodetector requiring a substantially silicon area than prior art photodetectors having the same gain. The photodetector includes a light converter for converting a light signal to a current; and a first vertical transistor. The first vertic...	10/19/1999
5793067	Hybrid transistor structure with widened leads for reduced thermal resistance An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may hav...	08/11/1998
5723897	Segmented emitter low noise transistor The present invention implements a novel emitter scheme that maximizes the emitter perimeter to emitter area ratio of an integrated circuit transistor, thereby achieving improved low noise characteristics over the prior art. Emitter regions are disposed i...	03/03/1998
5387813	Transistors with emitters having at least three sides A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., thr...	02/07/1995
5367189	Vertical semiconductor device A semiconductor device comprises a first electrode buried in one main face of a substrate and surrounded by a first insulator, a field oxide film covering the surface of the first electrode, a semiconductor layer connected with the first electrode, a seco...	11/22/1994
4945396	Semiconductor device having Darlington transistors A semiconductor device, CHARACTERIZED in that a Darlington transistor in which in one surface of a semiconductor of a first conductivity type, base regions of a second conductivity type, the number of which is larger that the number of base-emitter juncti...	07/31/1990
4646125	Semiconductor device including Darlington connections A semiconductor device includes a plurality of transistors formed on a common substrate and connected in a Darlington configuration. A conductor is connected between a metallization layer on the base region of a transistor of the last stage in the Darling...	02/24/1987
4475119	Integrated circuit power transmission array A power transistor array integrated circuit includes an array of transistors, each having an electrode connected in common to a conductive line forming a part of the integrated circuit. The electrodes of the transistors are spaced along the conductive lin...	10/02/1984
4390890	Saturation-limited bipolar transistor device A saturation-limited bipolar transistor device or circuit and a method of making same are provided which includes a merged NPN transistor and a PNP transistor structure formed so as to produce denser cells or circuits. A simple process is used to form the...	06/28/1983
3969752	Hybrid transistor A transistor having input, reference and output terminals includes a ceramic base with a metallized area plated thereon and a transistor die supported on the metallized area. The metallized area and the transistor die provide in an equivalent output circu...	07/13/1976

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Class 257/573 - With housing or contact structure or configuration