Class 257/570 - With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the device contains active solid-state
No. of patents: 51
Last issue date: 04/08/2008

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Number	Title	Issue Date
RE40222	Electronic semiconductor power device with integrated diode A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a ...	04/08/2008
7351615	Method of fabricating a MIS transistor A method of fabricating MIS transistors starts with formation of gate electrode portions. Then, high-speed ions are irradiated through an insulating film to implant impurity ions into a semiconductor region by a self-aligning process, followed by total removal of th...	04/01/2008
7286770	Fiber optic transmission lines on an SOC Disclosed is an integrated circuit comprising a plurality of cores attached to at least one transmitter and receiver, an optical transmission network embedded within the wire levels of the integrated circuit, and wherein the transmitter and receivers send and receiv...	10/23/2007
7167376	Multilayer wiring board, method of mounting components, and image pick-up device A multilayer wiring board on which multiple components are overlappingly mounted. The multilayer wiring board includes: a first surface on which a first component among the multiple components is mounted; and a second surface whose height in a thickness direction of...	01/23/2007
7098488	Insulated gate bipolar transistor An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed ...	08/29/2006
7079776	Optical signal transmission board and apparatus An individual optical signal transmission substrate includes an optical signal transmission area where at least one of a light emitting element for sending an optical signal to other optical signal transmission substrates or a light receiving element for receiving a...	07/18/2006
7000434	Method of creating an angled waveguide using lithographic techniques A waveguide having an angled surface is created by depositing an optical core material onto a substrate having two levels. In one embodiment, a high density plasma deposition may be used to deposit the optical core material. ...	02/21/2006
6979883	Integrated device in emitter-switching configuration and related manufacturing process An integrated device in emitter-switching configuration is described. The device is integrated in a chip of semiconductor material of a first conductivity type which has a first surface and a second surface opposite to each other. The device comprises a first transi...	12/27/2005
6969904	Trimming pattern There is provided a trimming pattern enabling trimming to be implemented with ease and time required for trimming to be shortened without causing damage to internal elements. The invention provides the trimming pattern for use in trimming of a semiconductor integrat...	11/29/2005
6952530	Integrated glass ceramic systems Integrated glass ceramic spacecraft include a plurality of glass ceramic components including molded, tempered, annealed, and patterned glass ceramic components coupled together for forming a support structure or frame or housing through which is communicated optica...	10/04/2005
6794730	High performance PNP bipolar device fully compatible with CMOS process A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high ga...	09/21/2004
6696354	Method of forming salicide A method of forming a salicide. A metal layer is formed on a silicon-based substrate comprising a gate with a spacer on the side wall of the gate and a source/drain is provided. Next, a first thermal treatment is performed to make the portions of the meta...	02/24/2004
6617660	Field effect transistor semiconductor and method for manufacturing the same This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor ...	09/09/2003
6545341	Power transistor The present invention relates to a constitution of a bipolar type power transistor, which comprises: a base layer of a first conductivity type; a collector layer of the first conductivity type formed on one surface of the base layer of the first conductiv...	04/08/2003
6511875	Method for making high K dielectric gate for semiconductor device A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer ...	01/28/2003
6252282	Semiconductor device with a bipolar transistor, and method of manufacturing such a device The invention relates to a semiconductor device including a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the...	06/26/2001
6222248	Electronic semiconductor power device with integrated diode A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first...	04/24/2001
5789799	High frequency noise and impedance matched integrated circuits An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor ...	08/04/1998
5502338	Power transistor device having collector voltage clamped to stable level over wide temperature range A power transistor device is provided which has a function of clamping the collector voltage to a stable level for a wide range of temperature variations. In the power transistor device, a plurality of pn junctions are formed to fabricate Zener diodes in ...	03/26/1996
5469103	Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a...	11/21/1995
5428233	Voltage controlled resistive device A voltage controlled resistive device is provided by coupling a vertical bipolar transistor (34) with a junction field effect transistor (36) through a well region 18, which functions as both a drain region for the junction field effect transistor (36), a...	06/27/1995
5397914	Power transistor device including power transistors in darlington connection and zener diode which is coupled between collector and base of power transistors and which is formed in polysilicon film In a transistor where collector is connected to an inductive load and switching current flows, a Zener diode comprising structure of plural pn-junctions constituted in series form to a polysilicon is provided between collector and base. Further MOSFET is ...	03/14/1995
5306937	Semiconductor device having a built-in current-sensing diode The present invention to a semiconductor switching device for use in semiconductor converter devices, which switching device has a built-in current sensor to detect the current flowing into parasitic diodes integrally formed as part of the semiconductor s...	04/26/1994
5233214	Controllable, temperature-compensated voltage limiter The invention relates to a controllable, temperature-compensated voltage limiter with a p+ np+ (or n+ pn+) semiconductor structure in which the width and doping of the central zone is selected such that no aval...	08/03/1993
5229313	Method of making a semiconductor device having multilayer structure Disclosed herein is such multilayer electrode structure of transistor and thyristor that a second electrode region serving as an upper layer electrode region is formed on a second semiconductor region which is an active region and an insulating film which...	07/20/1993
5200630	Semiconductor device A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are form...	04/06/1993
5200631	High speed optical interconnect An optoelectronic package with direct free space optical communication between pairs of optical transmitters and receivers located on different substrate surfaces in a closely spaced stack of chip carrying substrates is disclosed. The transmitters and rec...	04/06/1993
5170240	Input protection structure for integrated circuits An input protection structure for integrated circuits is connected in a semiconductor substrate between an input and an output for a reference potential. The input protection structure includes a first transistor acting as an input transistor and a second...	12/08/1992
5027182	High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) (14) and Darlington phototransistor pairs (14, 16) are provided for use in optical neural networks and other optoele...	06/25/1991
4977476	Semiconductor switch There is described a semiconductor switch device having two semiconductor components, the first component receiving drive signals from the second. The first component contains either a single power bipolar switch element for single ended control of the en...	12/11/1990
4945396	Semiconductor device having Darlington transistors A semiconductor device, CHARACTERIZED in that a Darlington transistor in which in one surface of a semiconductor of a first conductivity type, base regions of a second conductivity type, the number of which is larger that the number of base-emitter juncti...	07/31/1990
4924286	Semiconductor device A Darlington power transistor comprising two transistors (Q1, Q2) has a clip diode (Di) for clipping high surge voltage. A field plate (9a) is formed in a surface of a channel cut region (8) existing in peripheral portion ...	05/08/1990
4758872	Integrated circuit fabricated in a semiconductor substrate For elimination of undesired leakage current, there is disclosed an integrated circuit fabricated in a semiconductor substrate of a first conductivity type which comprises at least first and second semiconductor elements, the first semiconductor element h...	07/19/1988
4691221	Monolithically integrated bipolar Darlington circuit A monolithically integrated bipolar Darlington circuit comprising a driver transistor and output transistor whereby a semiconductor body contains a base layer of a first conductivity type and a collector layer of a second conductivity type which is below ...	09/01/1987
4672402	Semiconductor circuit device including an overvoltage protection element In a semiconductor circuit device having a diode as an overvoltage protection element, a semiconductor substrate is comprised of an N-type collector substrate integral with a transistor. An N+ type collector diffusion layer is formed on the re...	06/09/1987
4652902	Power semiconductor device The present invention comprises a power semiconductor device in which a bipolar transistor and a diode are formed in antiparallel in a semiconductor chip with an emitter electrode (21) on one surface of the transistor (16) serving also as an anode electro...	03/24/1987
4641171	Monolithically integrated semiconductor power device A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in a Darlington configuration integrated in the same chip solves the problem of ON-OFF switching which is prevented by the presence of parasitic tran...	02/03/1987
4618875	Darlington transistor circuit A Darlington transistor circuit having a power transistor and a driver transistor is proposed. The two transistors are monolithically integrated in a common substrate (10) by a planar process, the substrate forming the collector zones of the two transisto...	10/21/1986
4564771	Integrated Darlington transistor combination including auxiliary transistor and Zener diode In a three-stage Darlington transistor circuit, the base of the middle transistor is connected to the series combination of a resistance and a Zener diode, with the Zener diode anode being connected to the resistance. A voltage divider is provided between...	01/14/1986
4542399	Feed forward Darlington circuit A Darlington output stage is shown in which the saturation voltage is substantially reduced by the incorporation of a complementary transistor. An IC form of the circuit is shown in detail....	09/17/1985

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Class 257/570 - With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)