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| Number | Title | Issue Date |
| 8188471 | Field effect transistor A field effect transistor is provided including a gate electrode (for example, 15), a source electrode (13), a drain electrode (14) and a channel layer (11) to control current flowing between the source electrode (13) and the drain... | 05/29/2012 |
| 8183567 | Array substrate for liquid crystal display device and method of fabricating the same An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along... | 05/22/2012 |
| 8178877 | Thin film transistor and method for fabricating thin film transistor Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric su... | 05/15/2012 |
| 8168973 | Thin film transistor The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one co... | 05/01/2012 |
| 8148723 | Light-emitting device and manufacturing method thereof A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at leas... | 04/03/2012 |
| 8134153 | Semiconductor apparatus and fabrication method of the same It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic sub... | 03/13/2012 |
| 8124972 | Thin film transistor The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structur... | 02/28/2012 |
| 8120029 | Thin film transistor and method of manufacturing the same Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be... | 02/21/2012 |
| 8120030 | Thin film transistor and display device Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and... | 02/21/2012 |
| 8120028 | Active device array substrate, color filter substrate and manufacturing methods thereof An active device array substrate comprising a substrate, a pixel array, a partition configuration and an alignment material layer is provided. The substrate has an alignment region and a predetermined sealing region. The predetermined sealing region surrounds the al... | 02/21/2012 |
| 8106397 | Thin film transistor formed on flexible substrate and method of manufacturing the same A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack inclu... | 01/31/2012 |
| 8101948 | Switching element In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such ... | 01/24/2012 |
| 8097880 | Semiconductor component including a lateral transistor component A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric l... | 01/17/2012 |
| RE43079 | Thin film transistors for liquid crystal displays The amorphous silicon layer overlaps the gate electrode and the edges of the amorphous silicon layer are substantially encompassed by the edges of the gate electrode. The distance between the edges is at least 2 microns. Accordingly, both the light obliquely inciden... | 01/10/2012 |
| 8084771 | Bottom-gate thin film transistor and method of fabricating the same A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and ... | 12/27/2011 |
| 8067771 | Semiconductor device and method for manufacturing the same A semiconductor device includes a p-type TFT having a first semiconductor layer, and an n-type TFT having a second semiconductor layer. A tilted portion, which is widened toward the insulating substrate side, is formed in at least a part of an outer edge portion of ... | 11/29/2011 |
| 8067770 | Thin film transistor and flat panel display device including the same A thin film transistor includes a channel layer including an amorphous 12CaO.7Al2O3 (C12A7) and a flat panel display device including the same. According to the present invention, the amorphous channel layer can be formed at a low temperature u... | 11/29/2011 |
| 8049215 | Thin film transistor A thin film transistor has a gate electrode; a gate insulating layer provided so as to cover the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions which is provided so that at least part of each of them overlaps the gate ... | 11/01/2011 |
| 8039838 | Silicon thin film transistors, systems, and methods of making same Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and o... | 10/18/2011 |
| 8013335 | Semiconductor apparatus and fabrication method of the same It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic sub... | 09/06/2011 |
| 7994503 | Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass subs... | 08/09/2011 |
| 7994502 | Semiconductor device An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect ... | 08/09/2011 |
| 7973311 | Isolated sensor structures such as for flexible substrates A photosensor structure includes a pixel metal layer disposed in physical and electrical contact with a pixel thin film transistor and a lower sensor layer of a p-i-n photosensor. The pixel metal layer extends laterally to an extent less that the lower sensor layer ... | 07/05/2011 |
| 7968880 | Thin film transistor and display device To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetwee... | 06/28/2011 |
| 7960730 | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on t... | 06/14/2011 |
| 7960729 | Thin film transistor structure and method of fabricating the same In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-cha... | 06/14/2011 |
| 7943930 | Semiconductor device forming method In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperatur... | 05/17/2011 |
| 7923725 | Semiconductor device and a method of manufacturing the same According to a method of manufacturing a semiconductor device of the present invention, a gate electrode is formed above a substrate, and a insulating film is formed above the gate electrode. Then, an amorphous semiconductor film is formed above the insulating film,... | 04/12/2011 |
| 7906779 | Thin film transistor and method of manufacturing the same A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the dr... | 03/15/2011 |
| 7897968 | Electronic device and semiconductor device and method for manufacturing the same It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-size... | 03/01/2011 |
| RE42138 | Thin film transistors for liquid crystal displays The amorphous silicon layer overlaps the gate electrode and the edges of the amorphous silicon layer are substantially encompassed by the edges of the gate electrode. The distance between the edges is at least 2 microns. Accordingly, both the light obliquely inciden... | 02/15/2011 |
| 7888674 | Thin-film transistor substrate and method of manufacturing the same A thin-film transistor substrate includes a gate line, a capacitor dielectric layer, a gate insulation layer, an active pattern, a data line, a protection layer, and a pixel electrode. The gate wiring including a gate electrode, a lower storage electrode, and a gate... | 02/15/2011 |
| 7884361 | Pattern-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 02/08/2011 |
| 7884360 | Thin-film device and method of fabricating the same A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide... | 02/08/2011 |
| 7825411 | Thin film transistor with improved junction region A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming t... | 11/02/2010 |
| 7821002 | Semiconductor device and manufacturing method thereof The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insul... | 10/26/2010 |
| 7804089 | TFT array substrate and the fabrication method thereof A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a ch... | 09/28/2010 |
| 7804090 | Patterned-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal l... | 09/28/2010 |
| 7795616 | Liquid crystal display device and method for manufacturing the same As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion betwe... | 09/14/2010 |
| 7768006 | Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device, such as a field effect transistor, that includes a spacer shaped metal gate located over a channel within a semiconductor substrate that separates a plu... | 08/03/2010 |
