Class 257/569 - Complementary Darlington-connected transistors

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the Darlington configuration comprises
No. of patents: 20
Last issue date: 05/06/2008

Number	Title	Issue Date
7368361	Bipolar junction transistors and method of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti...	05/06/2008
7061074	Visible imaging device using Darlington phototransistors The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circu...	06/13/2006
6969904	Trimming pattern There is provided a trimming pattern enabling trimming to be implemented with ease and time required for trimming to be shortened without causing damage to internal elements. The invention provides the trimming pattern for use in trimming of a semiconductor integrat...	11/29/2005
6794730	High performance PNP bipolar device fully compatible with CMOS process A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high ga...	09/21/2004
6049131	Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness A method and the device produced by the method of selective refractory metal growth/deposition on exposed silicon, but not on the field oxide is disclosed. The method includes preconditioning a wafer in a DHF dip followed by the steps of 1) selectively de...	04/11/2000
5789799	High frequency noise and impedance matched integrated circuits An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor ...	08/04/1998
5670394	Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source The present invention teaches a method for fabricating a bipolar junction transistor ("BJT") from a semiconductor substrate having a base region, wherein the BJT comprises an increased Early voltage. The method initially comprises the step of forming a pa...	09/23/1997
5641691	Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ ...	06/24/1997
5481132	Transistor with a predetermined current gain in a bipolar integrated circuit A bipolar integrated circuit with N-type wells (2) formed in a P-type substrate (1) includes in first wells, first transistors (EBC), the well of which constitutes the collector. P-type base region (7a) is formed in the first well with an N+ emitter regio...	01/02/1996
4564855	High current PNP transistor forming part of an integrated monolithic circuit A structure associating a high current NPN transistor with a PNP control transistor also able to withstand relatively high currents in an integrated circuit structure. This structure comprises an N+ type substrate overlaid by a P type epitaxied...	01/14/1986
4542399	Feed forward Darlington circuit A Darlington output stage is shown in which the saturation voltage is substantially reduced by the incorporation of a complementary transistor. An IC form of the circuit is shown in detail....	09/17/1985
4370179	Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween...	01/25/1983
4261002	Monolithic complementary darlington A semiconductor device includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portio...	04/07/1981
4122482	Vertical complementary bipolar transistor device with epitaxial base zones A semiconductor device including a substrate of first conductivity type provided with an epitaxial region of the opposite conductivity type. The base of a first vertical bipolar transistor is formed by a localized epitaxial layer present above the first r...	10/24/1978
4078208	Linear amplifier circuit with integrated current injector A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of c...	03/07/1978
4058825	Complementary transistor structure having two epitaxial layers and method of manufacturing same A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second t...	11/15/1977
4035828	Semiconductor integrated circuit device A semiconductor integrated circuit device which may be utilized as a Darlington circuit having an input stage and an output stage is disclosed. The Darlington may be characterized as having an increased isolation between the input stage and the output sta...	07/12/1977
3993918	Integrated circuits A master/slave bistable arrangement which operates on current levels rather than voltage levels and with a single input of clock pulses. There are different bias current levels which are advantageously supplied by multi-layer current injection structures ...	11/23/1976
3959039	Method of manufacturing vertical complementary bipolar transistors each with epitaxial base zones A device having complementary transistors and method of manufacturing same. A monolithic device which comprises at least two transistors of opposite conductivity types. The device is provided on a substrate which is covered with an epitaxial region of the oppo...	05/25/1976
3947865	Collector-up semiconductor circuit structure for binary logic A collector-up binary structure of the type having spaced semiconductor regions forming a plurality of active devices for interconnection as a binary circuit is disclosed. The structure includes a semiconductor body of one conductivity having a planar sur...	03/30/1976

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Class 257/569 - Complementary Darlington-connected transistors