Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7323750 | Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrat... | 01/29/2008 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7235860 | Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 06/26/2007 |
| 7179329 | Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor ... | 02/20/2007 |
| 7061074 | Visible imaging device using Darlington phototransistors The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circu... | 06/13/2006 |
| 7045877 | Semiconductor protection device The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high outp... | 05/16/2006 |
| 7038254 | Hetero-junction bipolar transistor having a transition layer between the base and the collector This invention provides a double hetero-junction bipolar transistor (DHBT) in which a probability of the impact ionization at the interface between the base and the collector is reduced, thereby enhancing the break down voltage. In the present DHBT, a plurality of t... | 05/02/2006 |
| 7038250 | Semiconductor device suited for a high frequency amplifier According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector contact layer and made of an n-type GaAs layer; a second collector layer fo... | 05/02/2006 |
| 6969904 | Trimming pattern There is provided a trimming pattern enabling trimming to be implemented with ease and time required for trimming to be shortened without causing damage to internal elements. The invention provides the trimming pattern for use in trimming of a semiconductor integrat... | 11/29/2005 |
| 6949802 | ESD protection structure The invention describes structures and a process for providing ESD protection between multiple power supply lines or buses on an integrated circuit chip. Special diode strings are used for the protection devices whereby the diodes are constructed across the boundary... | 09/27/2005 |
| 6946720 | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for ea... | 09/20/2005 |
| 6933588 | High performance SCR-like BJT ESD protection structure In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adj... | 08/23/2005 |
| 6917080 | Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrat... | 07/12/2005 |
| 6917077 | Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode A semiconductor arrangement including: a substrate having a substrate layer (13) with an upper and lower surface, the substrate layer (13) being of a first conductivity type; a first buried layer (... | 07/12/2005 |
| 6903388 | Hetero-junction bipolar transistor and manufacturing method thereof A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layer 110 that is made of GaAs; an n-type first collector 121 that is made of a semiconductor material with a ... | 06/07/2005 |
| 6809400 | Composite pinin collector structure for heterojunction bipolar transistors This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables ... | 10/26/2004 |
| 6794730 | High performance PNP bipolar device fully compatible with CMOS process A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high ga... | 09/21/2004 |
| 6744115 | Semiconductor device and process of production of same A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on th... | 06/01/2004 |
| 6348724 | Semiconductor device with ESD protection The invention relates to a bipolar ESD protection comprising a protection transistor with a short-circuited base emitter (18, 19). Due to the snap-back effect, the transistor can switch from the normal high-ohmic condition to a low-ohmic condition in the ... | 02/19/2002 |
| 6329698 | Forming a self-aligned epitaxial base bipolar transistor An improved method and an apparatus for forming a self-aligned epitaxial base bipolar transistor in a semiconductor material is disclosed. The method of the invention involves forming an intrinsic base region formed by growing an epitaxial semiconductor m... | 12/11/2001 |
| 6300669 | Semiconductor integrated circuit device and method of designing same A semiconductor integrated circuit device comprises a multiple-stage amplifier including a plurality of transistors. The multiple-stage amplifier has a first stage comprising a plurality of bipolar transistors each having a single emitter structure. The b... | 10/09/2001 |
| 6281530 | LPNP utilizing base ballast resistor A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the emitter. The resistance from the center of the emitter region (11... | 08/28/2001 |
| 6271999 | ESD protection circuit for different power supplies A voltage clamping circuit that protects integrated circuits having multiple separate power supply voltage terminals from damage when an ESD event causes excessive differential voltages between the multiple separate power supply voltage terminals. The vol... | 08/07/2001 |
| 6084263 | Power device having high breakdown voltage and method of manufacturing the same The main characteristic feature of the invention is to prevent a leakage current from flowing when a planar type semiconductor device having a high breakdown voltage is reverse-biased. For example, a semiconductive film is formed on the surface of an n-ty... | 07/04/2000 |
| 6046492 | Semiconductor temperature sensor and the method of producing the same A semiconductor temperature sensor comprises independent current sources and bipolar transistors connected to form a Darlington circuit. The bipolar transistors have electrodes each connected to one of the current sources. An output voltage of the semicon... | 04/04/2000 |
| 5969399 | High gain current mode photo-sensor A high gain photodetector requiring a substantially silicon area than prior art photodetectors having the same gain. The photodetector includes a light converter for converting a light signal to a current; and a first vertical transistor. The first vertic... | 10/19/1999 |
| 5804861 | Electrostatic discharge protection in integrated circuits, systems and methods An integrated circuit has a semiconductor die with a substrate and at least first and second bond pads. An internal circuit is fabricated on the semiconductor die and connected to the first bond pad. An electrostatic discharge protection circuit including... | 09/08/1998 |
| 5789799 | High frequency noise and impedance matched integrated circuits An monolithic integrated circuit comprising a transistor-inductor structure is provided having simultaneously noise matched and input impedance matched characteristics at a desired frequency. The transistor-inductor structure comprises a first transistor ... | 08/04/1998 |
| 5629551 | Semiconductor device comprising an over-temperature detection element for detecting excessive temperatures amplifiers A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second ba... | 05/13/1997 |
| 5629545 | Electrostatic discharge protection in integrated circuits, systems and methods An integrated circuit has a semiconductor die with a substrate and at least first and second bond pads. An internal circuit is fabricated on the semiconductor die and connected to the first bond pad. An electrostatic discharge protection circuit including... | 05/13/1997 |
| 5541439 | Layout for a high voltage darlington pair There is disclosed a layout of a high voltage Darlington pair in which a circular field plate is utilized for both high voltage transistors in order to reduce the layout area. In this layout, both transistors of a Darlington pair are circular transistors ... | 07/30/1996 |
| 5525826 | Integrated vertical bipolar and vertical MOSFET transistors An integrated structure is described, that comprises a vertical bipolar transistor and a vertical MOSFET transistor, where, in order to reduce the series resistance of the MOSFET transistor, the collector region of the bipolar transistor and the drain reg... | 06/11/1996 |
| 5461252 | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second ba... | 10/24/1995 |
| 5449949 | Monolithic integrated semiconductor device A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region ... | 09/12/1995 |
| 5410177 | Planar semiconductor and Zener diode device with channel stopper region A planar semiconductor device having a heavily doped channel stopper region of the first conductivity type and at least the following components: a Zener diode having the following regions, seen from an upper surface of the device, an upper diode region o... | 04/25/1995 |
| 5397913 | Biopolar/Darlington transistor having enhanced comprehensive electricity characteristics A Darlington transistor having improved comprehensive electric characteristic and a bipolar transistor having improved high voltage characteristic are obtained. A collector resistivity .rho.N- (F) of a collector high resistivity layer (11) in a... | 03/14/1995 |
| 5227657 | Base-emitter reverse bias protection for BICMOS IC Emitter-base protection for a first bipolar transistor formed as part of a BiCMOS circuit. A second bipolar transistor is formed in the same well as the first bipolar transistor with both transistors using the well as their collectors. A current path thro... | 07/13/1993 |
| 5172209 | Integral Bi-CMOS logic circuit An integral Bi-CMOS logic circuit includes a pair of first transistors and a pair of second transistors. The pair of the first transistors includes a P-type MOS transistor receiving an input signal through its gate, and an NPN-type bipolar transistor with... | 12/15/1992 |
| 5170240 | Input protection structure for integrated circuits An input protection structure for integrated circuits is connected in a semiconductor substrate between an input and an output for a reference potential. The input protection structure includes a first transistor acting as an input transistor and a second... | 12/08/1992 |
| 5083182 | Darlington device with an ultra-lightweight emitter speed-up transistor The emitter region of a speed-up transistor is created in a base of a final transistor of a Darlington device and has a relatively low dopant concentration and small thickness.... | 01/21/1992 |
