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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 7932582 | Compact dual direction BJT clamps In a dual direction BJT clamp, multiple emitter and base fingers are alternatingly connected to ground and pad and share a common sub-collector. ... | 04/26/2011 |
| 7642621 | Semicondutor device and protection circuit In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the input/output terminal I/O, the base thereof is connected to a hig... | 01/05/2010 |
| 7495312 | Method for producing vertical bipolar transistors and integrated circuit A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter reg... | 02/24/2009 |
| RE40222 | Electronic semiconductor power device with integrated diode A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a ... | 04/08/2008 |
| 7352051 | Cascode, cascode circuit and method for vertical integration of two bipolar transistors into a cascode arrangement A cascode of a high-frequency circuit, includes a first transistor having a first base semiconductor region, a first collector semiconductor region and a first emitter semiconductor region, and a second transistor having a second base semiconductor region, a second ... | 04/01/2008 |
| 7341921 | Photodiode The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in ... | 03/11/2008 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7253498 | Bipolar transistor with geometry optimized for device performance, and method of making same The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a... | 08/07/2007 |
| 7217975 | Lateral type semiconductor device A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apa... | 05/15/2007 |
| 7215005 | Bipolar ESD protection structure The invention describes the fabrication and structure of an ESD protection device for integrated circuit semiconductor devices with improved ESD protection and resiliency. A vertical bipolar npn transistor forms the basis of the protection device. To handle the larg... | 05/08/2007 |
| 7202136 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant ther... | 04/10/2007 |
| 7135747 | Semiconductor devices having thermal spacers A high power, high frequency semiconductor device has a plurality of unit cells connected in parallel. The unit cells each having a controlling electrode and first and second controlled electrodes. A thermal spacer divides at least one of the unit cells into a first... | 11/14/2006 |
| 7126171 | Bipolar transistor A bipolar transistor of the present invention comprises a collector layer made of an n-type semiconductor and an emitter layer made of an n-type semiconductor provided on this collector layer. A gate layer for injecting p-type carriers (holes) into the emitter layer... | 10/24/2006 |
| 7126167 | Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises... | 10/24/2006 |
| 7106628 | Semiconductor device having enhanced breakdown voltage A semiconductor device has: a main circuit including a plurality of MOS transistors operating at a first voltage; a memory requiring an operation at a second voltage higher than the first voltage; and a drive circuit for driving the memory, the drive circuit compris... | 09/12/2006 |
| 7084484 | Semiconductor integrated circuit A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer on the front surface side of a second conductive type base layer that ... | 08/01/2006 |
| 7078257 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers... | 07/18/2006 |
| 7075168 | Semiconductor device A semiconductor device comprises a first base layer of a first conductive type which has a first surface and a second surface; a second base layer of a second conductive type which is formed on the first surface; first and second gate electrodes which are formed by ... | 07/11/2006 |
| 7071516 | Semiconductor device and driving circuit for semiconductor device A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electr... | 07/04/2006 |
| 7067857 | Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, ... | 06/27/2006 |
| 7064416 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 06/20/2006 |
| 7037799 | Breakdown voltage adjustment for bipolar transistors Devices and methods are disclosed related to a bipolar transistor device and methods of fabrication. A top region is formed at a surface of and within a base region. The top region is formed by implanting a dopant of an opposite conductivity to that of the base regi... | 05/02/2006 |
| 7026875 | System and method for a programmable gain amplifier Provided is system for an improved programmable gain amplifier (PGA). The system includes an amplifier and a first gain control mechanism. The first gain control mechanism includes a circuit input port and is positioned along a feedback path of the amplifier. The fi... | 04/11/2006 |
| 6989580 | Process for manufacturing an array of cells including selection bipolar junction transistors A process for manufacturing an array of cells, including: implanting, in a body of semiconductor material of a first conductivity type, a common conduction region of the first conductivity type; forming, in the body, above the common conduction region, a plurality o... | 01/24/2006 |
| 6987301 | Electrostatic discharge protection An electrostatic discharge device may provide better protection of an integrated circuit by more uniform breakdown of a plurality of finger regions. The plurality of finger regions may extend through a first region of a substrate having a first conductivity type and... | 01/17/2006 |
| 6977426 | Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the fir... | 12/20/2005 |
| 6900519 | Diffused extrinsic base and method for fabrication The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced ... | 05/31/2005 |
| 6881976 | Heterojunction BiCMOS semiconductor A BiCMOS semiconductor, and manufacturing method therefore, is provided. A semiconductor substrate having a collector region is provided. A pseudo-gate is formed over the collector region. An emitter window is formed in the pseudo-gate to form an extrinsic base stru... | 04/19/2005 |
| 6876060 | Complimentary bipolar transistor An NPN transistor having an epitaxial region of an N-type silicon/P-type silicon germanium/N-type silicon structure, and a PNP transistor having an epitaxial region of a P-type silicon/N-type silicon germanium/P-type silicon structure are formed on a silicon substra... | 04/05/2005 |
| 6815801 | Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 lo... | 11/09/2004 |
| 6806555 | Semiconductor component and method for fabricating it A semiconductor component and a method for fabricating it includes a substrate and an epitaxial layer situated thereon and integrating at least a first and a second bipolar component in the layer. The first and second bipolar components have a buried layer and diffe... | 10/19/2004 |
| 6803643 | Compact non-linear HBT array HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-l... | 10/12/2004 |
| 6794730 | High performance PNP bipolar device fully compatible with CMOS process A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high ga... | 09/21/2004 |
| 6784499 | Semiconductor device serving as a protecting element The protecting element includes an NPN transistor having an emitter connected to an input/output terminal and a collector and a base connected to a ground terminal. The input/output terminal has the possibility of receiving a surge voltage. The input/output terminal... | 08/31/2004 |
| 6764918 | Structure and method of making a high performance semiconductor device having a narrow doping profile A structure and method of making an NPN heterojunction bipolar transistor (100) includes a semiconductor substrate (11) with a first region (82) containing a dopant (86) for forming a base region of the transistor. A second region (84 | 07/20/2004 |
| 6750528 | Bipolar device An integrated electronic device includes a semiconductor substrate layer having a major surface formed along a crystal plane. In one embodiment a first conductivity type region is formed in the substrate layer and a substantially monocrystalline semiconductor layer ... | 06/15/2004 |
| 6744115 | Semiconductor device and process of production of same A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on th... | 06/01/2004 |
| 6737722 | Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof The lateral pnp transistor encompasses a p-type semiconductor substrate, an n-type first buried region disposed on the semiconductor substrate, an n-type uniform base region disposed on the first buried region, an n-type first plug region disposed in the uniform bas... | 05/18/2004 |
| 6693344 | Semiconductor device having low and high breakdown voltage transistors A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ ... | 02/17/2004 |
