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| Number | Title | Issue Date |
| 8178947 | Semiconductor device There is provided a semiconductor device in which an amount of fluctuations in output capacitance and feedback capacitance is reduced. In a trench-type insulated gate semiconductor device, a width of a portion of an electric charge storage layer in a direction along... | 05/15/2012 |
| RE43042 | Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternati... | 12/27/2011 |
| 8026575 | Semiconductor device, electronic device, and manufacturing method of the same The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolati... | 09/27/2011 |
| 7989921 | Soi vertical bipolar power component An SOI device comprises an isolation trench defining a vertical drift zone, a buried insulating layer to which the isolation trench extends, and an electrode region for emitting charge carriers that is formed adjacent to the insulating layer and that is in contact w... | 08/02/2011 |
| 7977769 | ESD protection device An ESD protection device is described, which includes a first P-type doped region, a second P-type doped region, a first N-type doped region, a second N-type doped region and an isolation structure. The first P-type doped region is configured in a substrate. The sec... | 07/12/2011 |
| 7973386 | ESD protection bipolar device with internal avalanche diode In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partia... | 07/05/2011 |
| 7932580 | Semiconductor device and method of manufacturing the same In the substrate and the epitaxial layer, isolation regions are formed to divide the substrate and the epitaxial layer into a plurality of element formation regions. Each of the isolation regions is formed by connecting first and second P type buried diffusion layer... | 04/26/2011 |
| 7932581 | Lateral bipolar junction transistor A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and ... | 04/26/2011 |
| 7919830 | Method and structure for ballast resistor A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on ... | 04/05/2011 |
| 7915709 | Semiconductor device and method of manufacturing the same The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second cond... | 03/29/2011 |
| 7902633 | Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the silicon substrate from a surface thereof; an electrically insulating ... | 03/08/2011 |
| 7843038 | High linearity digital variable gain amplifier Variable gain amplifiers offering high frequency response with improved linearity and reduced power dissipation are provided. An amplifier is disclosed that is constructed from a one-stage topology with multiple signal paths and compensation networks for improved li... | 11/30/2010 |
| 7816763 | BJT and method for fabricating the same According to one embodiment, a collector electrode including metal is used for a sink region for connecting an n+ type buried layer, so that the sink region can be narrowly formed. Further, an interval between a base region and the collector electrode can be reduced... | 10/19/2010 |
| 7795703 | Selective and non-selective epitaxy for base intergration in a BiCMOS process According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitax... | 09/14/2010 |
| 7791171 | Semiconductor device and method of manufacturing the same In a semiconductor device according to the present invention, two epitaxial layers are formed on a P type substrate. In the substrate and the epitaxial layers, isolation regions are formed to divide the substrate and the epitaxial layers into a plurality of islands.... | 09/07/2010 |
| 7777302 | Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilic... | 08/17/2010 |
| 7768101 | Semiconductor device having an insulated gate bipolar transistor and a free wheel diode A p-type collector region of an IGBT and an n-type cathode region of a free wheel diode are alternately formed in a second main surface of a semiconductor substrate. A back electrode is formed on the second main surface so as to be in contact with both of the p-type... | 08/03/2010 |
| 7728408 | Verticle BJT, manufacturing method thereof A vertical BJT which has a maximal current gain for a photodiode area. According to embodiments, since the BJT can be formed together with the photodiode, and collector current flows up and down based on the double base structure, the magnitude of the current may be... | 06/01/2010 |
| 7723823 | Buried asymmetric junction ESD protection device An improved lateral bipolar electrostatic discharge (ESD) protection device (40) comprises a semiconductor (SC) substrate (42), an overlying epitaxial SC layer (44), emitter-collector regions (48, 50) laterally spaced apart by a first dis... | 05/25/2010 |
| 7719087 | Semiconductor device A semiconductor device includes: a GaAs chip; and a resin sealing the GaAs chip. The GaAs chip includes: a p-type GaAs layer; an n-type GaAs layer on the p-type GaAs layer; a metal electrode located on the n-type GaAs layer along an edge of the GaAs chip and to whic... | 05/18/2010 |
| 7709930 | Tuneable semiconductor device with discontinuous portions in the sub-collector Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a ba... | 05/04/2010 |
| 7687886 | High on-state breakdown heterojunction bipolar transistor A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withsta... | 03/30/2010 |
| 7687887 | Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter A method for forming a self-aligned bipolar transistor structure uses the selective growth of a doped silicon emitter in a sloped oxide emitter window to form the self-aligned structure. In an alternate process flow, the top emitter layer is SiGe with a high Ge cont... | 03/30/2010 |
| 7675141 | Semiconductor device and method of manufacturing the same In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, an NPN transistor is formed. Around the NPN transistor, a protecti... | 03/09/2010 |
| 7671447 | Bipolar transistor and method of manufacturing the same The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region (1), a base region (2) and a collector region (3) of, respectively, a first conductivity typ... | 03/02/2010 |
| 7667294 | Lateral bipolar transistor A P+ base drawing diffusion region is formed on a substrate having an SOI structure. N+ emitter diffusion regions are formed on both sides of the P+ base drawing diffusion region through isolation insulating films interposed therebetween. A P type SOI layer, which s... | 02/23/2010 |
| 7622788 | GaN heterojunction bipolar transistor with a p-type strained InGaN base layer A gallium nitride heterojunction bipolar transistor with a p-type strained InGaN base layer is provided. The gallium nitride heterojunction bipolar transistor includes a substrate, a highly doped collector contact layer located over the substrate, a low doped collec... | 11/24/2009 |
| 7619299 | Semiconductor device and method of manufacturing the same In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this s... | 11/17/2009 |
| 7605445 | Sealed nitride layer for integrated circuits The present invention relates to an integrated circuit. The integrated circuit includes a substrate, at least one device region formed in the substrate, a patterned layer of oxide, a first and second layer of nitride and at least one metal contact region. The patter... | 10/20/2009 |
| 7605446 | Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are ... | 10/20/2009 |
| 7569910 | Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first transistor also a make up portions of the second transistor. That is, ... | 08/04/2009 |
| 7564117 | Bipolar transistor having variable value emitter ballast resistors Methods of forming and structures of a relatively large bipolar transistor is provided. The method includes forming a collector in a semiconductor region. Forming a base contiguous with a portion of the collector. Forming a plurality of emitters contiguous with port... | 07/21/2009 |
| 7560797 | Semiconductor device and manufacturing method of the same In a semiconductor device of the present invention, two epitaxial layers are formed on a P type single crystal silicon substrate. One of the epitaxial layers has an impurity concentration higher than that of the other epitaxial layer. The epitaxial layers are divide... | 07/14/2009 |
| 7547958 | Semiconductor device, electronic device, and manufacturing method of the same The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolati... | 06/16/2009 |
| 7504707 | Semiconductor device and manufacturing method thereof A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval t... | 03/17/2009 |
| 7504708 | High-frequency switching device A high-frequency switching device comprises a connecting region having a first conductivity type, and a first barrier region bordering on the connecting region and having a second conductivity type. A semiconductor region border on the first barrier region and has a... | 03/17/2009 |
| 7473983 | Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector comprising a plurality of alternati... | 01/06/2009 |
| 7462923 | Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS process According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitax... | 12/09/2008 |
| 7456487 | Semiconductor device This disclosure concerns a semiconductor device that includes a first base layer; second base layers provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers; an emitter layer formed on a surface of the se... | 11/25/2008 |
| 7442616 | Method of manufacturing a bipolar transistor and bipolar transistor thereof A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154... | 10/28/2008 |
