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| Number | Title | Issue Date |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7355263 | Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered wit... | 04/08/2008 |
| 7323763 | Semiconductor device having an improved voltage controlled oscillator A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The var... | 01/29/2008 |
| 7262478 | Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered wit... | 08/28/2007 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7235860 | Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 06/26/2007 |
| 7130100 | Optical module Even for a driving impedance of 25 Ω, high transmission waveform quality of an optical transmission module is maintained using an optical modulator element designed for a driving impedance of 50 Ω. The above can be achieved by adopting an optical module 100... | 10/31/2006 |
| 7067898 | Semiconductor device having a self-aligned base contact and narrow emitter A semiconductor structure having a self-aligned base contact and an emitter, where the base contact is electrically isolated from the emitter by a dielectric layer. The separation between the base contact and the emitter is determined by the thickness of the dielect... | 06/27/2006 |
| 6946720 | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for ea... | 09/20/2005 |
| 6906410 | Semiconductor device and method for manufacturing same A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes and a plurality of control electrodes. Conductive plates are disposed on the current electrodes and the control electrodes, and extend to regions for... | 06/14/2005 |
| 6870242 | Method for manufacturing and structure of semiconductor device with polysilicon definition structure A method including a buried layer formed on a semiconductor substrate, an active region formed adjacent to at least a portion of the buried layer, an isolation structure formed adjacent to at least a portion of the active region, and a gate oxide formed adjacent to ... | 03/22/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6798040 | Power semiconductor switch An IGBT structure includes successive regions whose conductivities have alternating signs. The structure is dimensioned for punch-through and is provided with two buffer layers. As a result, the component becomes symmetrically blocking and is suitable as a semicondu... | 09/28/2004 |
| 6787856 | Low triggering N MOS transistor for electrostatic discharge protection device An ESD device and method using parasitic bipolar transistors that are silicided. The first embodiment is a parasitic Bipolar Junction Transistor comprised of n+/n−/p−/n−/n+ regions. The emitter is formed of the second N+ region and the second N− well. The pa... | 09/07/2004 |
| 6777781 | Base-to-substrate leakage cancellation The operating temperature range for a vertical PNP transistor can be extended by applying cancellation techniques. The vertical PNP generates a first leakage current from the base-collector region. Another vertical PNP transistor is configured to generate a second l... | 08/17/2004 |
| 6770953 | Bipolar transistor A bipolar transistor is provided in which the product of base-collector capacitance and collector resistance can be reduced through a layout optimization, which leads to an improvement of the critical transistor parameters. The bipolar transistor has an emitter form... | 08/03/2004 |
| 6703647 | Triple base bipolar phototransistor A high gain phototransistor uses lateral and vertical transistor structures and a triple base. The base regions of two vertical structures are in the bulk of a semiconductor substrate while the base of a single lateral structure is adjacent a light receiv... | 03/09/2004 |
| 6703685 | Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo... | 03/09/2004 |
| 6674147 | Semiconductor device having a bipolar transistor structure Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+ -type region. Further, pr... | 01/06/2004 |
| 6504184 | Superior silicon carbide integrated circuits and method of fabricating The present invention provides semiconductor devices having at least one silicon region in a silicon carbide wafer in which is fabricated a low voltage semiconductor device such as for example, MOSFET devices, BiCMOS devices, Bipolar devices, etc., and on... | 01/07/2003 |
| 6424006 | Semiconductor component A semiconductor component, such as a high-frequency integrated circuit, includes a semiconductor substrate with one or more transistors formed thereon. First, second and third electrode terminals are respectively associated with the gate or base terminal,... | 07/23/2002 |
| 6323538 | Bipolar transistor and method for fabricating the same An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single... | 11/27/2001 |
| 6281530 | LPNP utilizing base ballast resistor A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the emitter. The resistance from the center of the emitter region (11... | 08/28/2001 |
| 6245609 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 06/12/2001 |
| 6236072 | Method and system for emitter partitioning for SiGe RF power transistors A power transistor includes a plurality of emitter regions and a plurality of base contacts. In order to decrease base resistance, each of the plurality of emitter regions is adjacent to at least four base contacts. The entire transistor includes multiple... | 05/22/2001 |
| 6225679 | Method and apparatus for protecting a device against voltage surges A structure for the protection of a high-voltage pad includes a lateral bipolar transistor, an N-type diffusion of which, connected to the pad to be protected, is made in an N-type tub with a zone that extends laterally outside the tub in the base. A P-ty... | 05/01/2001 |
| 6198154 | PNP lateral bipolar electronic device A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other NPN bipolar devices capable of being operated at high frequencies. The PNP device is incorporated to an electrically insulated multilayer st... | 03/06/2001 |
| 6087675 | Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film The present invention relates to a contact window structure having an insulation layer extending over an electrically conductive region. The insulation layer further has a plurality of contact windows which are filled with electrically conductive layers s... | 07/11/2000 |
| 6060761 | Lateral type transistor A lateral transistor includes a semiconductor substrate of a first conductivity type having a major surface; an emitter region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate; a collector re... | 05/09/2000 |
| 6060346 | Semiconductor device and method for manufacturing the same A semiconductor device and a method for manufacturing the same that forms a self-aligned contact hole between two gate lines. A substrate is provided that has a first gate line formed thereon. An insulator is formed on the first gate line and substrate. T... | 05/09/2000 |
| 5986324 | Heterojunction bipolar transistor A bipolar transistor having a pair of transistor cells formed on a single crystal substrate. Each one of the cells including a collector electrode, an elongated emitter electrode and a base electrode disposed over a first surface of the substrate. The bas... | 11/16/1999 |
| 5850099 | Thermally uniform transistor Generally, and in one form of the invention, a method for fabricating a transistor having a plurality of active regions comprising spacing or shaping the emitters 20 and 22, or gates, in a non-uniform manner to provide a substantially constant temperature... | 12/15/1998 |
| 5821148 | Method of fabricating a segmented emitter low noise transistor The present invention implements a novel emitter scheme that maximizes the emitter perimeter to emitter area ratio of an integrated circuit transistor, thereby achieving improved low noise characteristics over the prior art. Emitter regions are disposed i... | 10/13/1998 |
| 5773873 | Semiconductor device having multi-emitter structure A semiconductor device having a differential amplifier circuit portion made of two multi-emitter bipolar transistors (BPT). Each multi-emitter BPT has the same number of a plurality of transistor elements each having an independent emitter electrode. Each... | 06/30/1998 |
| 5747837 | Semiconductor device having input protective function A semiconductor device with an expanded range of a recommended condition for an input voltage is disclosed. In embodiment, the semiconductor device having input protection on an input terminal thereto, includes: a semiconductor region having a first condu... | 05/05/1998 |
| 5736755 | Vertical PNP power device with different ballastic resistant vertical PNP transistors Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. Th... | 04/07/1998 |
| 5723897 | Segmented emitter low noise transistor The present invention implements a novel emitter scheme that maximizes the emitter perimeter to emitter area ratio of an integrated circuit transistor, thereby achieving improved low noise characteristics over the prior art. Emitter regions are disposed i... | 03/03/1998 |
| 5689133 | ESD protection circuit An ESD protection circuit combines a split bipolar transistor with a transistor layout which exhibits very high tolerance to ESD events. The split bipolar transistor divides current among many segments and prevents the current hogging which often causes a... | 11/18/1997 |
| 5644159 | Semiconductor device including a band gap reference power supply device A semiconductor device implemented using a transistor (Q1) including at least one emitter (E1) and a transistor (Q2) which is larger than the transistor (Q1) including n emitters (E21 to E2n) each having the same area as the emitter (E1) of the transistor... | 07/01/1997 |
