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| Number | Title | Issue Date |
| 8120147 | Current-confined heterojunction bipolar transistor A process, machine, manufacture, composition of matter, and improvement thereof, and method of making and method of using the same, as well as necessary intermediates, generally relating to the field of semiconductor devices, the structure of transistors, and the st... | 02/21/2012 |
| 7329925 | Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f... | 02/12/2008 |
| 7221023 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized selective epitaxial growth (SEG) layer in a predetermined region of the acti... | 05/22/2007 |
| 7173320 | High performance lateral bipolar transistor A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bia... | 02/06/2007 |
| 7129562 | Dual-height cell with variable width power rail architecture A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell de... | 10/31/2006 |
| 6906410 | Semiconductor device and method for manufacturing same A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes and a plurality of control electrodes. Conductive plates are disposed on the current electrodes and the control electrodes, and extend to regions for... | 06/14/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6838713 | Dual-height cell with variable width power rail architecture A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell de... | 01/04/2005 |
| 6674147 | Semiconductor device having a bipolar transistor structure Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+ -type region. Further, pr... | 01/06/2004 |
| 6570240 | Semiconductor device having a lateral bipolar transistor and method of manufacturing same In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film i... | 05/27/2003 |
| 6403436 | Semiconductor device and method of manufacturing the same Subcollector layers or emitter layers constituting a bipolar transistor having different thicknesses form a two-layered structure. A resistor layer is formed at the same as one of the subcollector layers or one of the emitter layers, from the same materia... | 06/11/2002 |
| 6245609 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 06/12/2001 |
| 6198154 | PNP lateral bipolar electronic device A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other NPN bipolar devices capable of being operated at high frequencies. The PNP device is incorporated to an electrically insulated multilayer st... | 03/06/2001 |
| 5939759 | Silicon-on-insulator device with floating collector In a semiconductor device including a silicon substrate, an insulating layer on the silicon substrate, a silicon layer on the insulating layer, the silicon layer being weakly doped with impurities of a first conduction type, a base region extending into t... | 08/17/1999 |
| 5545918 | Circuit construction for controlling saturation of a transistor An integrated circuit including a semiconductor substrate, a semiconductor layer formed on the substrate, a desired bipolar transistor formed in the semiconductor layer. First and second parasitic elements are formed in the integrated circuit. An element ... | 08/13/1996 |
| 4807009 | Lateral transistor In a lateral transistor having a first semiconductor region of one conductivity type, and an emitter region and a collector region both having the opposite conductivity type and disposed in the first semiconductor region; a second semiconductor region hav... | 02/21/1989 |
| 4328509 | Current hogging logic circuit with npn vertical reversal transistor and diode/pnp vertical transistor output In an n-type base island are provided a p-type emitter stripe and a p-type output collector stripe, with one or more intermediate control collector stripes for switching the current of the output collector. The pattern of control collector stripes can pro... | 05/04/1982 |
| 4323795 | Bias current network for IC digital-to-analog converters and the like A single-chip 8-bit DAC with bipolar current sources, an output buffer amplifier for developing an output voltage, a regulated reference for producing a calibrated output, and operated by a single-voltage supply, e.g. +5 volts. The buffer amplifier includ... | 04/06/1982 |
| 4199776 | Integrated injection logic with floating reinjectors An integrated injection logic (I2 L) device includes at least two gate structures. Each gate structure includes a first region of one type conductivity with an injector region and a base region of the opposite type conductivity disposed therein... | 04/22/1980 |
| 4153909 | Gated collector lateral transistor structure and circuits using same In a lateral transistor structure, an auxiliary collector is interposed between the emitter and the main collector for controlling the flow of injected current carriers to the main collector. Alternatively, the main collector may be utilized for sensing t... | 05/08/1979 |
| 4119994 | Heterojunction and process for fabricating same Heterojunction devices including heterotransistors and heterodiodes are disclosed which exhibit improved high-frequency, efficiency, and power characteristics. The heterotransistor in one embodiment includes a wide-gap collector and in another embodiment ... | 10/10/1978 |
| 4085339 | Circuit arrangement in a complementary CHL technique A circuit arrangement CHL technique (current hogging logic) includes individual CHL arrangements each having an emitter, control collectors and an output collector and arranged within an epitaxial layer. The individual CHL arrangements are complementary w... | 04/18/1978 |
| 4035664 | Current hogging injection logic The disclosure is directed to the circuitry and monolithic semiconductor structure of Current Hogging Injection Logic Configurations. More specifically the disclosure relates to a semiconductor arrangement for the basic components of a highly integratable... | 07/12/1977 |
