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| Number | Title | Issue Date |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7342266 | Field effect transistors with dielectric source drain halo regions and reduced miller capacitance A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on one side of the gate conductor,... | 03/11/2008 |
| 7329925 | Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f... | 02/12/2008 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7268052 | Method for reducing soft error rates of memory cells In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping implant may comprise one or more implant steps that move a metallurgical ju... | 09/11/2007 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7235860 | Bipolar transistor including divided emitter structure A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 06/26/2007 |
| 7199015 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with sil... | 04/03/2007 |
| 7173320 | High performance lateral bipolar transistor A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bia... | 02/06/2007 |
| 7067898 | Semiconductor device having a self-aligned base contact and narrow emitter A semiconductor structure having a self-aligned base contact and an emitter, where the base contact is electrically isolated from the emitter by a dielectric layer. The separation between the base contact and the emitter is determined by the thickness of the dielect... | 06/27/2006 |
| 7002221 | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silico... | 02/21/2006 |
| 6906410 | Semiconductor device and method for manufacturing same A semiconductor device includes a power supply semiconductor chip that has a plurality of current passing electrodes and a plurality of control electrodes. Conductive plates are disposed on the current electrodes and the control electrodes, and extend to regions for... | 06/14/2005 |
| 6867477 | High gain bipolar transistor According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further ... | 03/15/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6858917 | Metal oxide semiconductor (MOS) bandgap voltage reference circuit A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of t... | 02/22/2005 |
| 6768183 | Semiconductor device having bipolar transistors An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transi... | 07/27/2004 |
| 6703685 | Super self-aligned collector device for mono-and hetero bipolar junction transistors The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is dispo... | 03/09/2004 |
| 6674147 | Semiconductor device having a bipolar transistor structure Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+ -type region. Further, pr... | 01/06/2004 |
| 6624502 | Method and device for limiting the substrate potential in junction isolated integrated circuits A substrate potential limiting device for an integrated circuit that includes a semiconductor substrate is provided. The device includes at least one unidirectional element connected between a substrate contact on the semiconductor substrate and a referen... | 09/23/2003 |
| 6611044 | Lateral bipolar transistor and method of making same A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a lateral bipolar transistor is formed on an integrated circuit... | 08/26/2003 |
| 6573582 | Semiconductor device A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolatin... | 06/03/2003 |
| 6570240 | Semiconductor device having a lateral bipolar transistor and method of manufacturing same In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film i... | 05/27/2003 |
| 6569730 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 05/27/2003 |
| 6365957 | Lateral bipolar transistor An object of the present invention is to provide a lateral bipolar transistor having a high current driving capacity and a high current amplification factor as well as a high cut-off frequency. A device area 13 surrounded by an isolating insulation layer is fo... | 04/02/2002 |
| 6323538 | Bipolar transistor and method for fabricating the same An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single... | 11/27/2001 |
| 6245609 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 06/12/2001 |
| 6225679 | Method and apparatus for protecting a device against voltage surges A structure for the protection of a high-voltage pad includes a lateral bipolar transistor, an N-type diffusion of which, connected to the pad to be protected, is made in an N-type tub with a zone that extends laterally outside the tub in the base. A P-ty... | 05/01/2001 |
| 6060761 | Lateral type transistor A lateral transistor includes a semiconductor substrate of a first conductivity type having a major surface; an emitter region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate; a collector re... | 05/09/2000 |
| 5939759 | Silicon-on-insulator device with floating collector In a semiconductor device including a silicon substrate, an insulating layer on the silicon substrate, a silicon layer on the insulating layer, the silicon layer being weakly doped with impurities of a first conduction type, a base region extending into t... | 08/17/1999 |
| 5514949 | Current mirror with at least one PNP-transistor A current mirror having at least one pnp-transistor and providing overvoltage protection has three collectors designed as partial collectors. Two of the partial collectors and the base are linked to a reference-current source and the other partial collect... | 05/07/1996 |
| 5508551 | Current mirror with saturation limiting A transistor built on a substrate employs two collectors, an output collector and a secondary collector. The purpose of the secondary collector is to collect minority carriers at saturation and feed these minority carriers back to the input reference of a... | 04/16/1996 |
| 5478760 | Process for fabricating a vertical bipolar junction transistor A process for fabricating a bipolar junction transistor by forming a trench in a silicon substrate. A lightly-doped base region is formed adjacent to the sidewalls of the trench, and a heavily-doped base region is formed under the bottom of the trench. Si... | 12/26/1995 |
| 5404043 | Semiconductor devices of the planar type bipolar transistors and combination bipolar/MIS type transistors A sidewall construction is utilized in the fabrication of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel length of th... | 04/04/1995 |
| 5258644 | Semiconductor device and method of manufacture thereof An improved bipolar transistor is provided which can be formed using a number of process steps which are similar to those used for forming MOSFETs. As such, the bipolar transistor is particularly useful in BiCMOS device arrangements. In accordance with on... | 11/02/1993 |
| 4807009 | Lateral transistor In a lateral transistor having a first semiconductor region of one conductivity type, and an emitter region and a collector region both having the opposite conductivity type and disposed in the first semiconductor region; a second semiconductor region hav... | 02/21/1989 |
| 4739379 | Heterojunction bipolar integrated circuit A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has... | 04/19/1988 |
| 4485551 | NPN Type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom and method for producing same The invention provides a unique sub-micron dimensioned NPN type transistor and method of making the same, wherein hundreds of such transistors may be fabricated on a single chip with each transistor comprising an active region surrounded by field oxide co... | 12/04/1984 |
| 4339765 | Transistor device A lateral type multi-collector transistor which has a first collector region which subtends an angle θ1 at the center of the emitter region and which has an effective plane distance WB1 from this center; and a second collector regio... | 07/13/1982 |
| 4231052 | Apparatus for parallel-in to serial-out conversion Apparatus for parallel-in to serial-out conversion comprises a strip of semiconductor material having electrical contacts at either end, and a detector near one end, sensitive to the local density of ambipolar carriers. Minority carriers (or ambipolar car... | 10/28/1980 |
| 4081697 | Semiconductor memory device The disclosed semiconductor memory device has a multiplicity of memory cells disposed in rows and columns. Each memory cell includes two transistors extending in the thickness direction of the device for storing and interconnected into a flip-flop, two la... | 03/28/1978 |
