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| Number | Title | Issue Date |
| 8143620 | System and method for adaptive classification of audio sources Systems and methods for adaptively classifying audio sources are provided. In exemplary embodiments, at least one acoustic signal is received. One or more acoustic features based on the at least one acoustic signal are derived. A global summary of acoustic features ... | 03/27/2012 |
| 7868325 | Semiconductor wafer of single crystalline silicon and process for its manufacture Semiconductor wafer of monocrystalline silicon contain fluorine, the fluorine concentration being 1·1010 to 1·1016 atoms/cm3, and is free of agglomerated intrinsic point defects whose diameter is greater than or equal to a critical... | 01/11/2011 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7352044 | Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises... | 04/01/2008 |
| 7335950 | Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region | 02/26/2008 |
| 7279370 | Thin film transistor array substrate and method of fabricating the same A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electr... | 10/09/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7202149 | Semiconductor device and manufacturing method thereof A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of: forming first and second semiconductor layers over ... | 04/10/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7187080 | Semiconductor device with a conductive layer including a copper layer with a dopant A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (202), forming a dielectric layer (204) over the semiconductor substrate (202), and etching a trench or a via (206) in the dielectr... | 03/06/2007 |
| 7145175 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 12/05/2006 |
| 7115925 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 10/03/2006 |
| 7112545 | Passivation of material using ultra-fast pulsed laser The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer. ... | 09/26/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7053457 | Opto-electronic component The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is... | 05/30/2006 |
| 7038238 | Semiconductor device having a non-single crystalline semiconductor layer A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer m... | 05/02/2006 |
| 6984847 | Dual panel type organic electroluminescent device and method of fabricating the same An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the fi... | 01/10/2006 |
| 6930326 | Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconducto... | 08/16/2005 |
| 6831333 | Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region | 12/14/2004 |
| 6815805 | Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided with a hydrogen-bearing compound, particularly ammonia. Hydrogen is thu... | 11/09/2004 |
| 6734499 | Operation method of semiconductor devices An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is disposed between said gate elect... | 05/11/2004 |
| 6716664 | Functional device and method of manufacturing the same A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate... | 04/06/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6639264 | Method and structure for surface state passivation to improve yield and reliability of integrated circuit structures A method for passivating surface states in an integrated circuit structure having a gate conductor with a gate dielectric layer. The method comprises the step of fabricating a solid state source of fluorine in close proximity to the gate dielectric layer.... | 10/28/2003 |
| 6593164 | Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same A cyano process of introducing cyano ions (CN-) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed... | 07/15/2003 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6492659 | Semiconductor device having single crystal grains with hydrogen and tapered gate insulation layer To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent ... | 12/10/2002 |
| 6433269 | Silicon photoelectric conversion device, method of fabricating the same and method of processing the same A cyano process of introducing cyano ions (CN-) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed... | 08/13/2002 |
| 6346716 | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 02/12/2002 |
| 6310363 | Thin-film transistor and semiconductor device using thin-film transistors with N and P impurities in the source and drain regions In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active... | 10/30/2001 |
| 6215154 | Thin film transistor and method of fabricating the same A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a... | 04/10/2001 |
| 6184541 | Thin film transistor and method of producing the same On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and th... | 02/06/2001 |
| 6180982 | Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected,... | 01/30/2001 |
| 6180991 | Semiconductor having low concentration of phosphorous A non-single-crystalline semiconductor material and a device utilizing the material, the material being of an intrinsic or substantially intrinsic conductivity type and including silicon and containing a dangling bond neutralizer consisting of hydrogen an... | 01/30/2001 |
| 6144041 | Semiconductor device having an active layer with no grain boundary A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the... | 11/07/2000 |
| 6114734 | Transistor structure incorporating a solid deuterium source for gate interface passivation The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for formation of components... | 09/05/2000 |
| 6097071 | ESD protection clamp for mixed voltage I/O stages using NMOS transistors An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first ... | 08/01/2000 |
| 6093936 | Integrated circuit with isolation of field oxidation by noble gas implantation A silicon semiconductor integrated circuit includes an insulative field oxidation layer which substantially does not encroach under active circuit elements of the integrated circuit. The field oxidation layer is formed of oxidized amorphous silicon create... | 07/25/2000 |
| 6037611 | Thin film transistor and its fabrication A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a gate electrode on... | 03/14/2000 |
| 6028264 | Semiconductor having low concentration of carbon Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×1018 atoms/cm3.... | 02/22/2000 |
