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| Number | Title | Issue Date |
| 7446392 | Electronic device and method for manufacturing the same An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5Ã... | 11/04/2008 |
| 7329925 | Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f... | 02/12/2008 |
| 7321159 | Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs Methods for fabricating an assembly having functional blocks coupling to a substrate. The method includes providing the substrate with receptor sites wherein each of the receptor sites is designed to couple to one of the functional blocks. Electrodes are coupled to ... | 01/22/2008 |
| 7298021 | Electronic device and method for manufacturing the same An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5Ã... | 11/20/2007 |
| 7238987 | Lateral semiconductor device and method for producing the same A high withstand voltage lateral semiconductor device capable of improving its on-state breakdown voltage and safe operation area (SOA) without lowering its current capabilities, and structured so as to be easy to produce. The lateral semiconductor device comprises ... | 07/03/2007 |
| 7183216 | Methods to form oxide-filled trenches A thermal oxidation process is used to fill trenches with an oxide; however, the oxidation process consumes some of the silicon. The embodiments herein advantageously apply this tendency for the oxidation process to consume silicon so as to convert all the silicon s... | 02/27/2007 |
| 7173320 | High performance lateral bipolar transistor A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bia... | 02/06/2007 |
| 7144785 | Method of forming isolation trench with spacer formation A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer formed on a silicon germanium (SiGe) layer. A trench extends through the Si layer into the SiGe layer, and sidewall spacers are employed th... | 12/05/2006 |
| 7098113 | Method and system for providing a power lateral PNP transistor using a buried power buss A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second collector regions. Therefore slots are placed in each of the regions. Accor... | 08/29/2006 |
| 7087979 | Bipolar transistor with an ultra small self-aligned polysilicon emitter The intrinsic base region of a bipolar transistor is formed to avoid a chemical interaction between the chemicals used in a chemical mechanical polishing step and the materials used to form the base region. The method includes the step of forming a trench in a layer... | 08/08/2006 |
| 7084485 | Method of manufacturing a semiconductor component, and semiconductor component formed thereby A method of manufacturing a semiconductor component includes: providing a semiconductor substrate (210, 510); forming a trench (130, 430) in the semiconductor substrate to define a plurality of active areas separated from each other by the trench; form... | 08/01/2006 |
| 7067857 | Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, ... | 06/27/2006 |
| 6979882 | Electronic device and method for manufacturing the same An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5Ã... | 12/27/2005 |
| 6894366 | Bipolar junction transistor with a counterdoped collector region An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector r... | 05/17/2005 |
| 6844628 | Electronic device and method for manufacturing the same An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5Ã... | 01/18/2005 |
| 6791155 | Stress-relieved shallow trench isolation (STI) structure and method for forming the same A shallow trench isolation (STI) structure in a semiconductor substrate and a method for forming the same are provided. A trench is formed in a semiconductor substrate. A first dielectric layer is formed on sidewalls of the trench. The first dielectric layer is form... | 09/14/2004 |
| 6753592 | Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing A dual polysilicon emitter, complementary output is provided which utilizes a buried power buss. While providing these advantages, the process is not complicated. The process has the speed performance of the ASSET technology with an easier process to produce. In add... | 06/22/2004 |
| 6734524 | Electronic component and method of manufacturing same An electronic component includes a semiconductor substrate (110), an epitaxial semiconductor layer (120, 221, 222) over the semiconductor substrate, and a semiconductor region (130, 230) in the epitaxial semiconductor layer. The epitaxial semico... | 05/11/2004 |
| 6570240 | Semiconductor device having a lateral bipolar transistor and method of manufacturing same In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film i... | 05/27/2003 |
| 6566733 | Method and system for providing a power lateral PNP transistor using a buried power buss A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second collector regions. Therefore slots are placed in each of the reg... | 05/20/2003 |
| 6410972 | Standard cell having a special region and semiconductor integrated circuit containing the standard cells The present invention provides a standard cell which can reduce an effective cell size and improve an integration degree of a semiconductor integrated circuit. The standard cell includes a plurality of MOS transistors formed on a semiconductor substrate. ... | 06/25/2002 |
| 6376897 | Lateral bipolar transistor formed on an insulating layer In a bipolar transistor improved to exhibit an excellent high-frequency property by decreasing the width of the intrinsic base with without increasing the base resistance, an emitter region, intrinsic base region and collector region are closely aligned o... | 04/23/2002 |
| 6262467 | Etch barrier structure of a semiconductor device and method for fabricating the same A semiconductor device is disclosed, together with a fabricating method therefor. The semiconductor device has an etch barrier structure, made with SiN or SiON, which is formed on an element-isolating region alongside an active region. Although there is a... | 07/17/2001 |
| 6245609 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 06/12/2001 |
| 6153919 | Bipolar transistor with polysilicon dummy emitter A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon... | 11/28/2000 |
| 6133594 | Compound semiconductor device A compound semiconductor device having a mesa type heterojunction bipolar transistor comprises a collector layer of first conductivity type having a collector breakdown voltage of a predetermined magnitude, a base layer of second conductivity type formed ... | 10/17/2000 |
| 6060740 | Non-volatile semiconductor memory device and method for manufacturing the same The non-volatile semiconductor memory device is formed on a silicon substrate and comprises a plurality of semiconductor active regions defined by a plurality of element isolation regions, a source region and a drain region formed in each of the semicondu... | 05/09/2000 |
| 5952706 | Semiconductor integrated circuit having a lateral bipolar transistor compatible with deep sub-micron CMOS processing A semiconductor integrated circuit having a lateral bipolar transistor, is fabricated in a manner compatible with sub-micron CMOS processing. A base contact structure is formed over a bipolar active area, in essentially direct contact to a portion of the ... | 09/14/1999 |
| 5880516 | Semiconductor device utilizing a pedestal collector region and method of manufacturing the same A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitax... | 03/09/1999 |
| 5637909 | Semiconductor device and method of manufacturing the same A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is f... | 06/10/1997 |
| 5583368 | Stacked devices Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schot... | 12/10/1996 |
| 5548156 | Method and apparatus for SOI transistor A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by... | 08/20/1996 |
| 5510647 | Semiconductor device and method of manufacturing the same A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is f... | 04/23/1996 |
| 5501992 | Method of manufacturing bipolar transistor having ring-shaped emitter and base A ring-shaped emitter region is formed either in a region a little toward an inner periphery or in a region a little toward an outer periphery in an upper layer portion of a ring-shaped base region of a bipolar transistor. A conductive layer is laminated ... | 03/26/1996 |
| 5478760 | Process for fabricating a vertical bipolar junction transistor A process for fabricating a bipolar junction transistor by forming a trench in a silicon substrate. A lightly-doped base region is formed adjacent to the sidewalls of the trench, and a heavily-doped base region is formed under the bottom of the trench. Si... | 12/26/1995 |
| 5465006 | Bipolar stripe transistor structure This invention pertains to a lateral bipolar transistor comprising an emitter, a base and a collector. The transistor exhibits improved function and overall size reduction, due to the base and emitter structure. An island forms both the base and emitter r... | 11/07/1995 |
| 5457338 | Process for manufacturing isolated semi conductor components in a semi conductor wafer A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silico... | 10/10/1995 |
| 5448104 | Bipolar transistor with base charge controlled by back gate bias A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region by... | 09/05/1995 |
| 5446312 | Vertical-gate CMOS compatible lateral bipolar transistor A transistor with silicon on insulator (SOI) intrinsic base and a collector each formed by a low temperature epitaxial process and each orientated vertically with respect to the (SOI) substrate. The base width can be as narrow as in a conventional vertica... | 08/29/1995 |
| 5424575 | Semiconductor device for SOI structure having lead conductor suitable for fine patterning A semiconductor device has an electrically insulating substrate and a semiconductor layer formed on the insulating substrate. A plurality of semiconductor regions are defined so as to be joined to each other to form at least two homojunctions in the semic... | 06/13/1995 |
