Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8106481 | Semiconductor devices with graded dopant regions Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly impr... | 01/31/2012 |
| 7692268 | Integrated circuit with bipolar transistor An integrated circuit including a bipolar transistor is disclosed. One embodiment provides an insulation structure used to form a junction insulation, a collector structure formed inside a semiconductor zone having openings dividing the collector structure into coll... | 04/06/2010 |
| 7422952 | Method of forming a BJT with ESD self protection A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector ... | 09/09/2008 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends betwe... | 03/11/2008 |
| 7329925 | Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f... | 02/12/2008 |
| 7285454 | Bipolar transistors with low base resistance for CMOS integrated circuits Complementary metal-oxide-semiconductor (CMOS) integrated circuits with bipolar transistors and methods for fabrication are provided. A bipolar transistor may have a lightly-doped base region. To reduce the resistance associated with making electrical contact to the... | 10/23/2007 |
| 7285830 | Lateral bipolar junction transistor in CMOS flow An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for c... | 10/23/2007 |
| 7253073 | Structure and method for hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 08/07/2007 |
| 7221036 | BJT with ESD self protection A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector ... | 05/22/2007 |
| 7202136 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant ther... | 04/10/2007 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe bas... | 02/06/2007 |
| 7173320 | High performance lateral bipolar transistor A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias voltage thereto during operation of the transistor. The polarity of the bia... | 02/06/2007 |
| 7112865 | Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ... | 09/26/2006 |
| 7019383 | Gallium arsenide HBT having increased performance and method for its fabrication According to one exemplary embodiment, a gallium arsenide heterojunction bipolar transistor comprises a collector layer and a first spacer layer situated over the collector layer, where the first spacer layer is a high-doped P+ layer. For example, the first spacer l... | 03/28/2006 |
| 6995068 | Double-implant high performance varactor and method for manufacturing same A varactor designed to enable voltage controlled oscillator (VCO) integration in wireless systems is the base-emitter junction of a specially optimized NPN device formed with a double base implant. A first, shallow implant optimizes capacitance, leakage current, and... | 02/07/2006 |
| 6894366 | Bipolar junction transistor with a counterdoped collector region An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector r... | 05/17/2005 |
| 6864538 | Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage.... | 03/08/2005 |
| 6730981 | Bipolar transistor with inclined epitaxial layer In an element formation region, a surface of an N− epitaxial layer is inclined upward from an end of a field oxide film to a sidewall of an opening. An external base diffusion layer at the surface of the N− epitaxial layer is inclined upwar... | 05/04/2004 |
| 6611044 | Lateral bipolar transistor and method of making same A lateral bipolar transistor for an intergrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage. More particularly, a lateral bipolar transistor is formed on an integrated circuit... | 08/26/2003 |
| 6570240 | Semiconductor device having a lateral bipolar transistor and method of manufacturing same In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film i... | 05/27/2003 |
| 6538294 | Trenched semiconductor device with high breakdown voltage An arrangement in a semiconductor component includes a highly doped layer on a substrate layer and is delimited by at least one trench extending from the surface of the component through the highly doped layer. A sub-layer between the substrate layer and ... | 03/25/2003 |
| 6501152 | Advanced lateral PNP by implant negation A lateral NPN transistor (LPNP) (102) having the lightly doped drain extension implant blocked from the emitter region (118) but not the collector region (120). Accordingly, the emitter region (118) has a more abrupt junction for high emitter injection ef... | 12/31/2002 |
| 6376897 | Lateral bipolar transistor formed on an insulating layer In a bipolar transistor improved to exhibit an excellent high-frequency property by decreasing the width of the intrinsic base with without increasing the base resistance, an emitter region, intrinsic base region and collector region are closely aligned o... | 04/23/2002 |
| 6281530 | LPNP utilizing base ballast resistor A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the emitter. The resistance from the center of the emitter region (11... | 08/28/2001 |
| 6245609 | High voltage transistor using P+ buried layer A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This... | 06/12/2001 |
| 6246104 | Semiconductor device and method for manufacturing the same An Si semiconductor device has an emitter region, a base region and a collector region formed on a substrate substantially in parallel to a plane of the substrate. And at least one of the emitter region the base region and the collector region includes an... | 06/12/2001 |
| 6153919 | Bipolar transistor with polysilicon dummy emitter A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon... | 11/28/2000 |
| 6043112 | IGBT with reduced forward voltage drop and reduced switching loss The boundary between the P type silicon base and N+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing lifetime in the silicon.... | 03/28/2000 |
| 6005283 | Complementary bipolar transistors A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral ... | 12/21/1999 |
| 5965923 | Lateral bipolar transistor and apparatus using same A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral ... | 10/12/1999 |
| 5920111 | CMOS OP-AMP circuit using BJT as input stage An accumulated-base bipolar junction transistor and an application of said transistor is described. A base region of an accumulated-base bipolar junction is formed by the implantation and then the diffusion of a first dopant material into the semiconducto... | 07/06/1999 |
| 5880516 | Semiconductor device utilizing a pedestal collector region and method of manufacturing the same A semiconductor device having an epitaxial layer of one conductivity type formed on a semiconductor substrate of the other conductivity type, a base region of the other conductivity type formed on the epitaxial layer to extend from a surface of the epitax... | 03/09/1999 |
| 5828124 | Low-noise bipolar transistor A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity as to practically turn off the surface portion of the transistor, so that th... | 10/27/1998 |
| 5777375 | Semiconductor device improved in a structure of an L-PNP transistor A semiconductor device relating to an improvement in an L-PNP transistor in particular is such that, on a semiconductor substrate of a first conductivity type, a base region is formed which has a second conductivity type opposite in conductivity to the fi... | 07/07/1998 |
| 5629556 | High speed bipolar transistor using a patterned etch stop and diffusion source A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as... | 05/13/1997 |
| 5565701 | Integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors An integrated circuit containing both power and small-signal NPN bipolar devices. The small-signal devices use lateral current flow, and are completely surrounded (laterally and vertically) by an N-type well region. The N-type well region itself is comple... | 10/15/1996 |
| 5523607 | Integrated current-limiter device for power MOS transistors A bipolar control transistor, forming part of an integrated current-limiter device comprises inside an epitaxial layer superimposed over a semiconductor substrate of a first type of conductivity, a base region of a second type of conductivity accessible f... | 06/04/1996 |
| 5501992 | Method of manufacturing bipolar transistor having ring-shaped emitter and base A ring-shaped emitter region is formed either in a region a little toward an inner periphery or in a region a little toward an outer periphery in an upper layer portion of a ring-shaped base region of a bipolar transistor. A conductive layer is laminated ... | 03/26/1996 |
| 5448104 | Bipolar transistor with base charge controlled by back gate bias A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region by... | 09/05/1995 |
| 5422509 | Integrated current-limiter device for power MOS transistors A bipolar control transistor, forming part of an integrated current-limiter device comprises inside an epitaxial layer superimposed over a semiconductor substrate of a first type of conductivity, a base region of a second type of conductivity accessible f... | 06/06/1995 |
