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| Number | Title | Issue Date |
| 7327012 | Bipolar Transistor Devices A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a ... | 02/05/2008 |
| 7276744 | Semiconductor device and method of manufacturing the same This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up... | 10/02/2007 |
| 7274317 | Transmitter using vertical BJT A transmitter having a vertical BJT, capable of reducing power consumption, carrier leakage of a local oscillator and an error vector magnitude (EVM), is disclosed. In the transmitter, vertical BJTs implemented by a standard triplex well CMOS process are used in a f... | 09/25/2007 |
| 7208330 | Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant w... | 04/24/2007 |
| 7176548 | Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 02/13/2007 |
| 7068552 | Sense amplifier A sense amplifier configured to amplify and output complementary input signals, comprising: a pair of first and second transistors; a pair of first and second resistor elements which are connected to at least one of source terminals and drain terminals of the first ... | 06/27/2006 |
| 7026690 | Memory devices and electronic systems comprising integrated bipolar and FET devices The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) const... | 04/11/2006 |
| 6977426 | Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the fir... | 12/20/2005 |
| 6933588 | High performance SCR-like BJT ESD protection structure In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adj... | 08/23/2005 |
| 6787795 | Logic apparatus and logic circuit A logic apparatus having first and second single-electron devices connected serially or in parallel. Each of the single-electron devices includes a conductive island insulatively disposed between two tunnel barriers, which separate the conductive island from respect... | 09/07/2004 |
| 6693344 | Semiconductor device having low and high breakdown voltage transistors A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ ... | 02/17/2004 |
| 6495896 | Semiconductor integrated circuit device with high and low voltage wells A semiconductor integrated circuit device comprises an n-type well 8-1 formed in a p-type silicon substrate 1, an n-type well 8-2 formed so as to surround a part of the substrate 1, in which a p- -type well is formed, a p- -type well... | 12/17/2002 |
| 6104080 | Integrated circuit having capacitors for smoothing a supply voltage The integrated circuit is provided with capacitors for smoothing the supply voltage. The capacitors are disposed below the supply interconnects which supply the integrated circuit with the supply voltage. This enables the integrated circuit to be accommod... | 08/15/2000 |
| 6084286 | Integrated device in an emitter switching configuration and with a cellular structure An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact reg... | 07/04/2000 |
| 5994740 | Semiconductor device An n- -type silicon active layer having a thickness of 6 μm or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the a... | 11/30/1999 |
| 5976940 | Method of making plurality of bipolar transistors In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substr... | 11/02/1999 |
| 5892268 | Inductive load driving and control circuits inside isolation regions A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the sub... | 04/06/1999 |
| 5708287 | Power semiconductor device having an active layer An n- -type silicon active layer having a thickness of 6 μm or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the a... | 01/13/1998 |
| 5545918 | Circuit construction for controlling saturation of a transistor An integrated circuit including a semiconductor substrate, a semiconductor layer formed on the substrate, a desired bipolar transistor formed in the semiconductor layer. First and second parasitic elements are formed in the integrated circuit. An element ... | 08/13/1996 |
| 5523606 | BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors A BiCMOS semiconductor device includes a pair of p-channel and n-channel MOS field effect transistors, a hetero-junction bipolar transistor including an epitaxial base layer made of a first compound semiconductor, and a homo-junction bipolar transistor in... | 06/04/1996 |
| 5508551 | Current mirror with saturation limiting A transistor built on a substrate employs two collectors, an output collector and a secondary collector. The purpose of the secondary collector is to collect minority carriers at saturation and feed these minority carriers back to the input reference of a... | 04/16/1996 |
| 5500551 | Integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia... | 03/19/1996 |
| 5426328 | BICDMOS structures A process is disclosed which simultaneously forms high quality complementary bipolar transistors, relatively high voltage CMOS transistors, relatively low voltage CMOS transistors, DMOS transistors, zener diodes and thin-film resistors, or any desired com... | 06/20/1995 |
| 5300805 | Epitaxial tub bias structure for integrated circuits A bias structure for an integrated circuit including first and second transistors having emitter terminals coupled respectively to the supply and to a terminal of a resistor whose potential, under certain operating conditions of the circuit, exceeds the s... | 04/05/1994 |
| 5151765 | Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics A semiconductor device having a submicron miniaturization level structure comprises a first high-current bipolar transistor having a first wide emitter width and a second high-speed bipolar transistor having a narrow emitter width relatively to the first ... | 09/29/1992 |
| 5121185 | Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages A monolithic semiconductor integrated circuit device includes bipolar transistors and MOS transistors constituting plural blocks formed in a single semiconductor substrate and capable of performing different functions. The bipolar transistors in the block... | 06/09/1992 |
| 4935800 | Semiconductor integrated circuit This invention discloses a semiconductor integrated circuit in which an analog circuit and a digital circuit are formed on a single chip. The semiconductor integrated circuit includes a p-type semiconductor region, an n+ -type buried region for... | 06/19/1990 |
| 4807011 | Semiconductor integrated circuit incorporating SITS A semiconductor integrated circuit comprising a plurality of vertical static induction transistors (SITs) of normally-off type formed in a common semiconductor substrate in such a manner that the lateral dimension of the channel region of the SITs employe... | 02/21/1989 |
| 4536784 | Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is... | 08/20/1985 |
| 4458158 | IC Including small signal and power devices An integrated circuit having first and second N-type epitaxial layers grown over a P-type silicon substrate includes PN junction isolated pockets. In at least one pocket is a small signal device, namely an I2 L transistor. In an adjacent pocket... | 07/03/1984 |
| 4412142 | Integrated circuit incorporating low voltage and high voltage semiconductor devices An integrated circuit incorporating high voltage semiconductor devices which are controlled by low voltage semiconductor devices is disclosed, including a method for making the same. The low voltage devices which are capable of realizing complex logic fun... | 10/25/1983 |
| 4228448 | Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor This disclosure relates to a bipolar integrated semiconductor structure that has incorporated therein both I2 L and linear type bipolar devices. The integrated structure utilizes a double epitaxial layer deposited or formed on a starting substr... | 10/14/1980 |
| 4202006 | Semiconductor integrated circuit device A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.... | 05/06/1980 |
| 4189738 | Semiconductor integrated circuit device There is provided a semiconductor integrated circuit device having a Class B push-pull circuit including a first transistor of which the base is connected with a signal source and the collector to a positive power source, and a second transistor of which ... | 02/19/1980 |
| 4136353 | Bipolar transistor with high-low emitter impurity concentration An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a g... | 01/23/1979 |
| 4047220 | Bipolar transistor structure having low saturation resistance A triple diffused interdigitated NPN transistor formed in an isolated N-epitaxial pocket of an otherwise standard NPN bipolar junction isolated integrated circuit. The N-type diffused collector pocket in the N-epitaxial layer lowers collector resistance o... | 09/06/1977 |
| 4047217 | High-gain, high-voltage transistor for linear integrated circuits A semiconductor structure for, and method of manufacture of, a linear integrated circuit provides the equivalent of a base function in a transistor, wherein the base function has a dual charge density, with the latter being relatively low in the lower act... | 09/06/1977 |
| 4030954 | Method of manufacturing a semiconductor integrated circuit device A method of manufacturing a semiconductor integrated circuit device including N-P-N transistors is characterized in that a base region of at least one of the N-P-N transistors is partially etched and removed with chemicals, thus to be formed with a depres... | 06/21/1977 |
| 3969748 | Integrated multiple transistors with different current gains A multiple transistor consists of vertical and lateral transistors, the collector region of the lateral transistor is formed by diffusion within the diffused base region of the vertical transistor simultaneously with the emitter region of the vertical tra... | 07/13/1976 |
| 3961340 | Integrated circuit having bipolar transistors and method of manufacturing said circuit Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer... | 06/01/1976 |
