Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 8143700 | Electrostatic discharge protection circuit The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple the different fingers or SCRs to decrease the multi-triggering problem... | 03/27/2012 |
| 8102024 | Semiconductor integrated circuit and system LSI including the same A semiconductor integrated circuit having a diode element includes a diffusion layer which constitutes the anode and two diffusion layers which are provided on the left and right sides of the anode and which constitute the cathode, such that the anode and the cathod... | 01/24/2012 |
| 8049306 | High voltage integration circuit with freewheeling diode embedded in transistor A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a devic... | 11/01/2011 |
| 7626243 | ESD protection for bipolar-CMOS-DMOS integrated circuit devices An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer... | 12/01/2009 |
| 7439145 | Tunable semiconductor diodes A diode structure fabrication method. In a P− substrate, an N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of the diode structure. Upon the N+ layer, an N− layer is formed. Then, a P+ region is formed to serve as an a... | 10/21/2008 |
| 7420255 | Semiconductor device incorporating protective diode with stable ESD protection capabilities A semiconductor device provided with stable ESD protection capabilities, incorporating a transistor and a protective diode to form a power control IC. The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second... | 09/02/2008 |
| 7417303 | System and method for ESD protection An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circu... | 08/26/2008 |
| 7411271 | Complementary metal-oxide-semiconductor field effect transistor A complementary metal-oxide-semiconductor field effect transistor (CMOSFET) is provided. The CMOSFET includes a substrate of a first conductivity type, a first epitaxial layer, a well, a second epitaxial layer of a second conductivity type, a first sinker, a second ... | 08/12/2008 |
| 7348657 | Electrostatic discharge protection networks for triple well semiconductor devices An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction type configuration. ... | 03/25/2008 |
| 7244992 | Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, and a first doped region formed in the second w... | 07/17/2007 |
| 7227197 | Semiconductor high-voltage devices A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n(or p)-layer containing a plurality of floating p (or n)-islands. The effect of the floating islands is to absorb a... | 06/05/2007 |
| 7221023 | Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized selective epitaxial growth (SEG) layer in a predetermined region of the acti... | 05/22/2007 |
| 7208759 | Semiconductor integrated circuit device and method of testing the same Functional circuits such as a processor, an SRAM, a DRAM and a flash-EEPROM are mounted on a semiconductor chip. Of these functional circuits, for example, the flash-EEPROM which fluctuates a potential of the semiconductor chip is separated from the other circuits b... | 04/24/2007 |
| 7205581 | Thyristor structure and overvoltage protection configuration having the thyristor structure A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third region of the first conductivity type, which adjoins the second regio... | 04/17/2007 |
| 7196889 | Zener triggered overvoltage protection device An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has... | 03/27/2007 |
| 7196378 | Electrostatic-protection dummy transistor structure A semiconductor apparatus where output and protection transistors are different in transistor structure, and where, even when breakdown in the output transistor occurs earlier than in the protection transistor, an ESD surge current does not concentrate in the output... | 03/27/2007 |
| 7179205 | Differential motion machine A differential motion machine for closely simulating natural human motion is provided. A user mountable carriage is designed to slide freely, in the fore and aft directions. The carriage contains a power transfer element, such as pedals, arm levers or the like, whic... | 02/20/2007 |
| 7170107 | IC chip having a protective structure An IC chip having a protective structure that is distributed over the semiconductor chip in such a manner that it is not possible to trigger a malfunction in the circuit by means of irradiation without the protective structure also being affected by the irradiation.... | 01/30/2007 |
| 7166876 | MOSFET with electrostatic discharge protection structure and method of fabrication A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an oppos... | 01/23/2007 |
| 7164185 | Semiconductor component and method of manufacture A semiconductor component having a tuned variable resistance resistor and a method for manufacturing the tuned variable resistance resistor. A semiconductor process for manufacturing a semiconductor component is selected. For the selected process, the tuned variable... | 01/16/2007 |
| 7158357 | Capacitor design in ESD circuits for eliminating current leakage An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) is disclosed. The ESD protection circuit has a RC module having a resistor and capacitor connected in series; and a current dissipation module for dissipating the ESD, wherein the cap... | 01/02/2007 |
| 7138701 | Electrostatic discharge protection networks for triple well semiconductor devices An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction type configuration. ... | 11/21/2006 |
| 7133268 | Current control via a variable voltage snubbing network System and method for controlling current across a load. A preferred embodiment comprises a current varying circuit (such as current varying circuit 525) that can create a sequence of voltage drops in a driver circuit (such as the driver circuit 505) c... | 11/07/2006 |
| 7119405 | Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device us... | 10/10/2006 |
| 7119401 | Tunable semiconductor diodes A diode structure that facilitates tuning the breakdown voltage of the diode structure, and a method for forming and operating the diode structure. In a P− substrate, a N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of ... | 10/10/2006 |
| 7115952 | System and method for ESD protection An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circu... | 10/03/2006 |
| 7106562 | Protection circuit section for semiconductor circuit system A semiconductor circuit system has first, second, and third external terminals electrically separated from each other. The first external terminal is configured to receive a first power supply voltage in a normal operation. A protection circuit section is provided i... | 09/12/2006 |
| 7102199 | Low voltage transient voltage suppressor and method of making A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clam... | 09/05/2006 |
| 7084729 | Ignition coil An ignition coil has a connector electrically connected to an external circuit, an igniter for accommodating a switching element adapted to cause a current supplied from the connector to be intermittent, a primary coil portion for generating a predetermined voltage ... | 08/01/2006 |
| 7067883 | Lateral high-voltage junction device A lateral high-voltage junction device for over-voltage protection of an MOS circuit includes a substrate having a first junction region separated from a second junction region by a substrate region. An MOS gate electrode overlies the substrate region and is separat... | 06/27/2006 |
| 7061029 | High-voltage device structure A high-voltage device structure disposed in a substrate of a first conductivity type includes a first well and a second well each of a second conductivity type, a source diffusion region and a drain diffusion region each of a first length located in the first well a... | 06/13/2006 |
| 7049663 | ESD protection device with high voltage and negative voltage tolerance An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first type well inside the first type substrate, the first type well being f... | 05/23/2006 |
| 7042028 | Electrostatic discharge device An electrostatic discharge (ESD) device, which functions like a diode during normal IC operation and like a SCR during an electrostatic discharge event, is provided. To form an equivalent SCR structure, the ESD device includes a plurality of N+ regions and a plurali... | 05/09/2006 |
| 7037814 | Single mask control of doping levels In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the m... | 05/02/2006 |
| 7037785 | Method of manufacturing flash memory device Disclosed is a method of manufacturing the flash memory device. The method comprises the steps of sequentially forming a tunnel oxide film, a first polysilicon film and a hard mask film on a semiconductor substrate, etching portions of the hard mask film, the first ... | 05/02/2006 |
| 7030461 | Device for electrostatic discharge protection The present invention is related to an Electrostatic Discharge protection device. This may be a semiconductor device such as a CMOS transistor, having a snap-back IV characteristic, in order to withstand ESD pulses. The device of the invention comprises an additiona... | 04/18/2006 |
| 7022566 | Integrated radio frequency circuits An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing the capacitive coupling from the RF circuits to the substrate, improvi... | 04/04/2006 |
| 7019382 | Arrangement for ESD protection of an integrated circuit To protect a high-frequency integrated circuit (1) against higher voltages than normal operating voltages on an input/output terminal connected to a bonding pad (2), a semiconductor varistor (3) having low and essentially constant resistance for... | 03/28/2006 |
| 7012305 | Electro-static discharge protection circuit for dual-polarity input/output pad An electro-static discharge (ESD) protection circuit for a dual polarity I/O pad is provided. The protection circuit includes a substrate of first type; a deep well region of second type disposed in the first type substrate; a well region of first type disposed in t... | 03/14/2006 |
| 7009253 | Method and apparatus for preventing microcircuit thermo-mechanical damage during an ESD event A method and apparatus for preventing thermo-mechanical damage to an electrostatic discharge (ESD) protection device is disclosed. The method and apparatus of the invention use materials with superior thermo-mechanical properties, in particular, the Coefficient of T... | 03/07/2006 |
