Class 257/543 - Lightly doped junction isolated resistor (e.g., ion implanted resistor)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the resistive element is of the form
No. of patents: 45
Last issue date: 01/15/2008

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
7319254	Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor...	01/15/2008
7223668	Method of etching metallic thin film on thin film resistor An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and ope...	05/29/2007
7208814	Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa...	04/24/2007
7136299	High-density phase change cell array and phase change memory device having the same A phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair f...	11/14/2006
7064414	Heater for annealing trapped charge in a semiconductor device A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heatin...	06/20/2006
7053463	High-voltage integrated vertical resistor and manufacturing process thereof The manufacturing process comprises the steps of growing epitaxially a first layer from a semiconductor material substrate, forming in the first layer a first and a second buried region spaced from one another and having conductivity of the type opposite that of the...	05/30/2006
7038297	Semiconductor diffused resistors with optimized temperature dependence Ion implanted resistors formed in the body of a crystalline silicon substrate. The resistors have a different conductivity type from that of the silicon substrate. The sheet resistance and temperature dependence of the resistor layer is determined by the dose of the...	05/02/2006
6992327	Monitor pattern of semiconductor device and method of manufacturing semiconductor device A plurality of diffused resistors and a plurality of wirings (resistive elements) are alternately disposed along a virtual line, and those diffused resistors and wirings are connected in series by contact vias. In the same wiring layer as that of the wirings, a dumm...	01/31/2006
6943414	Method for fabricating a metal resistor in an IC chip and related structure According to one exemplary embodiment, an integrated circuit chip comprises a first interconnect metal layer. The integrated circuit chip further comprises a first intermediate dielectric layer situated over the first interconnect metal layer. The integrated circuit...	09/13/2005
6916720	Thin film devices and method for fabricating thin film devices A method for making a thin film device on integrated circuits including the steps of applying a first photoresist layer to a first surface, and patterning the first photoresist layer to have at least a first opening that exposes the first surface. A film is deposite...	07/12/2005
6911622	Laser processing The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. The...	06/28/2005
6849921	Semiconductor device A semiconductor device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate; a polysilicon resistor film formed on the first insulating film; a second insulating film formed on the resistor film; a high heat conductor fi...	02/01/2005
6762501	Low stress integrated circuit copper interconnect structures Isolated metal structures (110), (140) are formed adjacent to terminated metal lines (100), (130) that are connect by a via (120). The isolated structures (110), (140) act to suppress the stress created in the termina...	07/13/2004
6759726	Formation of an isolating wall A method of forming an isolating wall in a semiconductor substrate of a first conductivity type, including the steps of boring in the substrate separate recesses according to the desired isolating wall contour; filling the recesses with a material containing a dopan...	07/06/2004
6720621	SOI semiconductor device with resistor body A SOI semiconductor device comprises a resistor body which is formed of a top semiconductor layer in a SOI substrate having an embedded dielectric film and the top semiconductor layer formed on the embedded dielectric film and which is dielectrically isolated by an ...	04/13/2004
6716727	Methods and apparatus for plasma doping and ion implantation in an integrated processing system Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a pl...	04/06/2004
6696916	Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partiall...	02/24/2004
6667538	Semiconductor device having semiconductor resistance element and fabrication method thereof A semiconductor device having a semiconductor resistance element is capable of suppressing a variation in characteristics of the semiconductor resistance element due to an acceptor concentration which is difficult to control, thereby stably improving the ...	12/23/2003
6639300	Semiconductor integrated circuit having an integrated resistance region A semiconductor integrated circuit device comprises an active device and a resistance element formed monolithically on a common substrate wherein the resistance element includes a dummy pattern having a layered structure identical with a layered structure...	10/28/2003
6313515	Reference voltage supply circuit A reference voltage supply circuit is provided with a PNP transistor. The PNP transistor has an N-type well for a base formed at a surface of a P-type semiconductor substrate. The reference voltage supply circuit is further provided with a resistor elemen...	11/06/2001
6307248	Definition of anti-fuse cell for programmable gate array application A method for fabricating an anti-fuse cell using an undoped polysilicon film as a mask in defining the anti-fuse window is described. A layer of silicon oxide is provided over the surface of a semiconductor substrate. A first undoped polysilicon layer is ...	10/23/2001
6111304	Semiconductor diffused resistor and method for manufacturing the same According to the present invention, a semiconductor device, and method for producing the same, is provided comprising: a resistance component formed in a component active region enclosed by a component separating-insulating layer on a semiconductor base; ...	08/29/2000
6107671	Film device provided with a resistance-adjustable resistive element A film device provided with a resistance-adjustable resistive element comprises a base film, a resistive element, a conductive circuit pattern wherein the resistive element is formed on and connected to the conductive circuit pattern, and a corrective lay...	08/22/2000
6078094	Starter current source device with automatic shut-down capability and method for its manufacture An analog circuit starter current source device with automatic shut-down capability. The device includes a semiconductor substrate (typically p-type) with a deep well region (typically n-type) below its surface, a first surface well region (typically n-ty...	06/20/2000
5889312	Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and pr...	03/30/1999
5572062	Antifuse with silicon spacers A method and resulting antifuse structure in an integrated circuit include a first metal interconnection layer on a first insulating layer over the substrate of the integrated circuit, a second insulating layer over the first metal interconnection layer. ...	11/05/1996
5525831	Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is forme...	06/11/1996
5401995	Circuit with diode-protected emitter resistors An operational amplifier, of a type which comprises a differential cell transconductor input stage (2) incorporating a current mirror (5) provided with a pair of degenerative resistors (R9,R10) and a gain stage (7), driven directly by a transistor (Q12) o...	03/28/1995
5321279	Base ballasting Generally, and in one form of the invention a semiconductor device is presented comprising: a transistor comprising an emitter finger and a base finger; and a ballast impedance connected to the base finger. Other devices and methods are also disclosed....	06/14/1994
4979001	Hidden zener diode structure in configurable integrated circuit In one embodiment of the invention, a P diffused region, acting as an anode of a zener diode, is formed within an N+ sinker which is part of a vertical transistor in a configurable integrated circuit. This N+ sinker contacts an N+ buried layer or an N+ su...	12/18/1990
4918494	Thin film transistor A thin film transistor which includes an insulative substrate, and a gate electrode, a gate insulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all laminated in that order onto the insulating substrate in the form ...	04/17/1990
4893166	High value semiconductor resistor In accordance with the teachings of this invention, resistors are fabricated in semiconductor devices utilizing a layer of semiconductor material having a preselected resistivity. Means are provided for electrically isolating the semiconductor region from...	01/09/1990
4868618	Ion implanted semiconductor device A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implante...	09/19/1989
4801555	Double-implant process for forming graded source/drain regions A process for forming graded source/drain regions in semiconductor devices involves two ion implantation steps and an optional drive-in step. The first implantation is a low dose implant with high energy and/or low mass ions to form the deeper grading reg...	01/31/1989
4785339	Integrated lateral PNP transistor and current limiting resistor A PNP transistor and a current limiting resistor are formed in a single active region of an integrated circuit device. The resistor is arranged to limit current flow between the emitter and collector regions of the transistor upon breakdown of the PN junc...	11/15/1988
4755484	Method of making a semimetal semiconductor contact A semiconductor contact system controls the boundary recombination velocity and optimizes the semiconductor transport phenomena and includes a microcrystalline layer of doped semiconductor microcrystals surrounded by a semiconductor oxide. The microcrysta...	07/05/1988
4725876	Semiconductor device having at least two resistors with high resistance values A semiconductor device comprising at least two pinch resistors or two ion-implanted resistors having a precise resistance ratio therebetween. The pinch resistor and ion-implanted resistor have at least one region contributing to the determination of a res...	02/16/1988
4656495	Bipolar ram cell and process An integrated bipolar RAM cell and process for its manufacture is disclosed. The RAM cell includes first and second cross-coupled bipolar transistors with first and second load elements coupled to the collectors of the first and second transistors, respec...	04/07/1987
4613887	Semiconductor device with a means for discharging carriers In an output transistor of transistor-transistor logic (TTL) circuits, an output transistor of TTL is provided with, in a region between a p-type base region and the p-type semiconductor substrate on which a TTL circuit is fabricated, a p- diff...	09/23/1986
4543593	Semiconductor protective device A semiconductor protective device has a semiconductor substrate of one conductivity type, the first island region being of a conductivity type opposite to that of the semiconductor substrate; second and third regions formed in a surface layer of the first...	09/24/1985

«First «Previous1 2 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/543 - Lightly doped junction isolated resistor (e.g., ion implanted resistor)