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| Number | Title | Issue Date |
| 7656009 | Robust ESD cell An electric discharge device includes a bipolar transistor configuration comprising a base, an emitter, and a collector. At least one pinched resistor is formed in a region comprising both the base and emitter so as to produce a pinched resistive area that develops ... | 02/02/2010 |
| 7602044 | Semiconductor device having polycrystalline silicon resistors A semiconductor device has a semiconductor substrate, a first insulating film disposed on the semiconductor substrate, and groups of resistors made of polycrystalline silicon and disposed on the first insulating film. At least some of the groups of resistors include... | 10/13/2009 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7247926 | High-frequency switching transistor A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area... | 07/24/2007 |
| 7239007 | Bipolar transistor with divided base and emitter regions A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electricall... | 07/03/2007 |
| 7227730 | Device for ESD protection of an integrated circuit A device for ESD (electrostatic discharge) protection of a circuit of a semiconductor device comprises a field effect transistor based varistor with gate, source and drain regions, wherein one of the source and drain regions is connected to an input/output pad of th... | 06/05/2007 |
| 7208814 | Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa... | 04/24/2007 |
| 7164567 | Device for ESD protection of an integrated circuit A device for ESD protection of a high frequency circuit (1) of a semiconductor device comprises first (3) and second (4) p-type and first (6) and second (5) n-type JFET's, wherein the first p-type JFET (3) is connected with ... | 01/16/2007 |
| 7136299 | High-density phase change cell array and phase change memory device having the same A phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair f... | 11/14/2006 |
| 7091094 | Method of making a semiconductor device having a gate electrode with an hourglass shape The present invention provides a semiconductor device that has reduced a short-channel effect by preventing the effective channel length at the sides of a channel of a transistor from decreasing by forming the length of a gate electrode to be different according to ... | 08/15/2006 |
| 7019382 | Arrangement for ESD protection of an integrated circuit To protect a high-frequency integrated circuit (1) against higher voltages than normal operating voltages on an input/output terminal connected to a bonding pad (2), a semiconductor varistor (3) having low and essentially constant resistance for... | 03/28/2006 |
| 6917080 | Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrat... | 07/12/2005 |
| 6849921 | Semiconductor device A semiconductor device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate; a polysilicon resistor film formed on the first insulating film; a second insulating film formed on the resistor film; a high heat conductor fi... | 02/01/2005 |
| 6753578 | Resin-sealed semiconductor device A resin-sealed semiconductor device is provided which allows unwanted air to be bled out steadily and readily from the space defined between the resistor of a plate-like shape and the insulating substrate in the resin sealing step. The resin-sealed semiconductor dev... | 06/22/2004 |
| 6703283 | Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semi... | 03/09/2004 |
| 6696916 | Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partiall... | 02/24/2004 |
| 6667538 | Semiconductor device having semiconductor resistance element and fabrication method thereof A semiconductor device having a semiconductor resistance element is capable of suppressing a variation in characteristics of the semiconductor resistance element due to an acceptor concentration which is difficult to control, thereby stably improving the ... | 12/23/2003 |
| 6612019 | Integrated circuit inductors The invention relates to an inductor comprising a plurality of interconnected conductive segments interwoven with a substrate. The inductance of the inductor is increased through the use of coatings and films of ferromagnetic materials such as magnetic me... | 09/02/2003 |
| 6611042 | Semiconductor device including resistors isolated and equdistant from diffusion regions In a semiconductor substrate, at least one diffusion region exists between resistors on an element isolation layer, and the resistors and the diffusion regions are arranged such that all distances between the respective resistors and the diffusion regions... | 08/26/2003 |
| 6531745 | Electro static discharge protection n-well ballast resistor device An n-well resistor device and its method of fabrication. The n-well resistor device of the present invention comprises a first n-type region and a second n-type region formed in an n-type silicon region. A gate dielectric layer formed on said n-type silic... | 03/11/2003 |
| 6479882 | Current-limiting device The current-limiting device 1 includes a silicon substrate 2 having surfaces opposite to each other, and two electrodes 3 deposited respectively on the opposite surfaces of the silicon substrate. The silicon substrate 2 is of a three-layered structure inc... | 11/12/2002 |
| 6441460 | Largely voltage-independent electrical resistor formed in an integrated semiconductor circuit An electrical resistor integrated in an integrated semiconductor circuit to have a useful resistor with two spaced-apart useful resistor terminal contact regions and a useful resistor region of semiconductor material located therebetween; and an auxiliary... | 08/27/2002 |
| 6331726 | SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry A ballasting resistor incorporating therein an H-shaped gate structure reduces a current therethrough by utilizing a pinching effect. The ballasting resistor is formed on a silicon-on-insulator substrate and includes a pair of N+ regions, a P | 12/18/2001 |
| 6255700 | CMOS semiconductor device A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An enhancement-type NMOS transistor has a source connected to the g... | 07/03/2001 |
| 6111304 | Semiconductor diffused resistor and method for manufacturing the same According to the present invention, a semiconductor device, and method for producing the same, is provided comprising: a resistance component formed in a component active region enclosed by a component separating-insulating layer on a semiconductor base; ... | 08/29/2000 |
| 6107671 | Film device provided with a resistance-adjustable resistive element A film device provided with a resistance-adjustable resistive element comprises a base film, a resistive element, a conductive circuit pattern wherein the resistive element is formed on and connected to the conductive circuit pattern, and a corrective lay... | 08/22/2000 |
| 6104277 | Polysilicon defined diffused resistor A resistor having a diffused impurity region in a semiconductor substrate, an insulated gate surrounding and defining the resistor, and a pair of separated conductive contacts to the diffused region within the boundary of the insulated gate for applying a... | 08/15/2000 |
| 5448092 | Insulated gate bipolar transistor with current detection function An insulated gate bipolar transistor (IGBT) element has a current detection function. An impurity-diffused area is formed at an area different from a unit cell area on the surface of the element. The current detection is performed by detecting a voltage d... | 09/05/1995 |
| 5432375 | Thermistor intended primarily for temperature measurement The invention relates to a thermistor, primarily intended for temperature measurement. The thermistor comprises at least two thermistor plates (14-17) on a carrier (10), adjacent to each other and connected in series. The plates are separated from each ot... | 07/11/1995 |
| 5210439 | Power transistor monolithic integrated structure A monolithic integrated power transistor chip includes a plurality of transistor cells arranged in two opposite and mutually spaced rows. Each cell has emitter- and collector connection spots arranged side-by-side and connected to corresponding branch con... | 05/11/1993 |
| 4827322 | Power transistor A power transistor according to the present invention improves breakdown resistance, in a monolithic structure for connecting a first-stage transistor and a second-stage transistor in Darlington connection, by constructing the same such that no parasitic ... | 05/02/1989 |
| 4725876 | Semiconductor device having at least two resistors with high resistance values A semiconductor device comprising at least two pinch resistors or two ion-implanted resistors having a precise resistance ratio therebetween. The pinch resistor and ion-implanted resistor have at least one region contributing to the determination of a res... | 02/16/1988 |
| 4686557 | Semiconductor element and method for producing the same Semiconductor element, including at least one bi-polar power transistor having parallel-connected transistor regions, active and contacted partial base zone regions, an emitter zone-base zone pn-junction, and base barrier resistances disposed between the ... | 08/11/1987 |
| 4510517 | Electronically controlled variable semiconductor resistor An electronically controlled variable semiconductor resistor having a three layer construction of either an NPN-type or a PNP-type which is similar to that of a bipolar transistor and basically using the base region and collector region of the transistor ... | 04/09/1985 |
| 4500900 | Emitter ballast resistor configuration A power transistor having a collector region lying in one principal surface of a semiconductor body, a base region surrounded with the collector region and an emitter region surrounded with the base region, wherein the emitter region includes a main trans... | 02/19/1985 |
| 4463370 | Semiconductor device for use in memory cells An integrated circuit element which is laterally insulated by oxide includes a transistor and a resistor. The resistor is formed by an elongation of the base and includes an emitter of the transistor. A pinching zone is present beneath the emitter and is ... | 07/31/1984 |
| 4398206 | Transistor with integrated diode and resistor A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being... | 08/09/1983 |
| 4302691 | Integrated delay circuit with PN-junction capacitor In an integrated silicon circuit a PN junction capacitor is charged to almost the full DC power supply voltage through a resistor and through the base-emitter junction of an output transistor. A constant current source and an input transistor switch are s... | 11/24/1981 |
| 4258311 | Constant voltage generator for generating a constant voltage having a predetermined temperature coefficient A constant voltage generator capable of generating a constant voltage having a fixed temperature coefficient regardless of manufacturing errors is disclosed. The constant voltage generator comprises a transistor construction having a forwardly biased PN-j... | 03/24/1981 |
| 4258380 | Bipolar transistor having an integrated resistive emitter zone A bipolar transistor includes an integrated resistive emitter zone of closed geometric configuration which divides the emitter region of the transistor into two sub-regions. The integrated resistive emitter zone serves to improve the secondary breakdown c... | 03/24/1981 |
