Class 257/540 - With compensation for non-linearity (e.g., dynamic isolation pocket bias)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein means are provided to compensate
No. of patents: 22
Last issue date: 07/15/2008

Number	Title	Issue Date
7400027	Nonvolatile memory device having two or more resistance elements and methods of forming and using the same A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having me...	07/15/2008
7319254	Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor...	01/15/2008
7208814	Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa...	04/24/2007
7136299	High-density phase change cell array and phase change memory device having the same A phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair f...	11/14/2006
6849921	Semiconductor device A semiconductor device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate; a polysilicon resistor film formed on the first insulating film; a second insulating film formed on the resistor film; a high heat conductor fi...	02/01/2005
6847084	Semiconductor device A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first cir...	01/25/2005
6667538	Semiconductor device having semiconductor resistance element and fabrication method thereof A semiconductor device having a semiconductor resistance element is capable of suppressing a variation in characteristics of the semiconductor resistance element due to an acceptor concentration which is difficult to control, thereby stably improving the ...	12/23/2003
6646324	Method and apparatus for a linearized output driver and terminator A method and apparatus for a linearized output driver and terminator is described. In one embodiment the method includes forming a gate electrode on a substrate, the portion of the substrate covered by the gate electrode defining a channel. The method fur...	11/11/2003
6456096	Monolithically compatible impedance measurement A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a sub...	09/24/2002
6178083	Layered capacitor device A layered capacitor device with high capacitance per unit area is realized by alternating in the vertical direction first layers (FL1, FL2, FL3, FL4, FL5) and second layers (SL1, SL2, SL3, SL4). A first layer (FL2) consists of horizontally alternating ele...	01/23/2001
5874771	Punch-through resistor The continuing miniaturization of integrated circuits leads to a demand for ever higher resistance values. In conventional diffused resistors or poly resistors, an increase in the resistance value also means an increase in the surface area. Such resistors...	02/23/1999
5608259	Reverse current flow prevention in a diffused resistor An IC is constructed with deep layers preventing current flow due to parasitic transistors formed within the IC. Reverse current in case of voltage source polarity reversal is prevented by means of the reverse bias diodes formed by the addition of a P+ ri...	03/04/1997
5475254	Semiconductor device with thin film resistor On a semiconductor substrate, a thin film resistor and a metal wiring for electrically extracting the thin film resistor are formed via a firth interlayer insulator. A second interlayer insulator covering the thin film resistor and the metal wiring is for...	12/12/1995
5416357	Semiconductor integrated circuit device A semiconductor integrated circuit device is provided with, in a land formed on a semiconductor substrate, a plurality of resistor layers constituted by semiconductor layers of a conductive type reverse to that of the land, and two of the plurality of the...	05/16/1995
5329155	Thin film integrated circuit resistor A thin film integrated circuit resistor is disclosed that is substantially linear at applied voltages greater than 100 volts. The integrated circuit resistor comprises a substrate, a plurality of resistive blocks electrically connected in series, a shield...	07/12/1994
4578695	Monolithic autobiased resistor structure and application thereof to interface circuits A monolithically integrated resistive attenuator is autobiased from an input bipolar signal the amplitude of which is higher than the integrated circuit voltage supplies. The resistive attenuator is arranged in a first pocket formed in an epitaxial layer,...	03/25/1986
4236164	Bipolar transistor stabilization structure A bipolar transistor structure consists of a standard structure and in addition consists of a low resistance-high impurity concentration region in the collector which contacts a nonactive portion of the base. The resistance between the base contact and th...	11/25/1980
4228450	Buried high sheet resistance structure for high density integrated circuits with reach through contacts A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A...	10/14/1980
4223335	Semiconductor device body having identical isolated composite resistor regions A resistor comprises two identical resistor regions with each resistor region isolated within the semiconductor body by a P-N junction, and with one electrode-bearing end of each resistor region both connected together and to a common region surrounding t...	09/16/1980
4161742	Semiconductor devices with matched resistor portions In an integrated circuit semiconductor device different matched resistors are provided by at least one resistor comprising at least two matched resistor parts connected together, these resistor parts also being matched to each constituent resistor part of...	07/17/1979
4100565	Monolithic resistor for compensating beta of a lateral transistor A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respe...	07/11/1978
3990092	Resistance element for semiconductor integrated circuit A semiconductor integrated circuit contains a resistance element, wherein a low resistance region of a first conductivity type, employed for a circuit resistance, is formed within a high resistance region of a second conductivity type, opposite to the fir...	11/02/1976

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Class 257/540 - With compensation for non-linearity (e.g., dynamic isolation pocket bias)