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| Number | Title | Issue Date |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. T... | 02/05/2008 |
| 7291884 | Trench MIS device having implanted drain-drift region and thick bottom oxide A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the t... | 11/06/2007 |
| RE39780 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 08/21/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7202181 | Etching of substrates of light emitting devices Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide... | 04/10/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7173232 | Light detection device and mounting method thereof A light detection device which can be stably surface-mounted on, for example, a circuit board or the like, and a mounting method thereof are provided. A light-receiving element includes, a transparent conductive electrode (first electrode), a semiconductor layer, an... | 02/06/2007 |
| 7148558 | Versatile system for limiting mobile charge ingress in SOI semiconductor structures Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate ne... | 12/12/2006 |
| 7115925 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 10/03/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7095089 | Light detecting device and method for mounting the same A light detecting device is fabricated to have the following structure: a light receiving element having a protective layer, in which a transparent conductive electrode, a semiconductor layer, an electrode and the protective layer are successively formed on a transp... | 08/22/2006 |
| 6984843 | Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer A board for an electronic device is provide comprising a substrate having an amorphous layer, a buffer layer formed on the amorphous layer, the buffer layer having an orientation at least in the direction of its thickness, and a conductive oxide layer formed on the ... | 01/10/2006 |
| 6956163 | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and... | 10/18/2005 |
| 6929987 | Microelectronic device fabrication method In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metal... | 08/16/2005 |
| 6774451 | Mos transistor for high density integration circuits This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip (10), said thin film (13) being slightly doped and of less than 30 nm in thickness, the source (14) and drain (15) contacts being of the Schottky t... | 08/10/2004 |
| 6770912 | Semiconductor device and method for producing the same A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is composed of a SiGe member form... | 08/03/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6603453 | Semiconductor device and method for manufacturing the same There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a seco... | 08/05/2003 |
| 6512279 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a ... | 01/28/2003 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6426542 | Schottky diode with dielectric trench An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide laye... | 07/30/2002 |
| 6346716 | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 02/12/2002 |
| 6215154 | Thin film transistor and method of fabricating the same A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a... | 04/10/2001 |
| 6093660 | Inductively coupled plasma chemical vapor deposition technology Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bo... | 07/25/2000 |
| 6080997 | Electromagnetic-wave detector An electromagnetic-wave detector having an electromagnetic-wave detection unit having the structure that M (Mࣙ1) contiguous pairs of a metallic layer and an insulating layer are provided at the side of incidence of an electromagnetic-wave, such as X-ray... | 06/27/2000 |
| 6075256 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a ... | 06/13/2000 |
| 6037644 | Semi-transparent monitor detector for surface emitting light emitting devices A structure for providing direct feedback of power emitted by a surface emitting light emitting device and the subsequent optical power control of the device is disclosed. In a preferred embodiment, an array of vertical cavity surface emitting lasers emit... | 03/14/2000 |
| 6031247 | Liquid crystal display A liquid crystal display having a TFT cell array including a plurality of gate lines formed in parallel on a substrate and a plurality of data lines formed perpendicularly to the gate lines. The plurality of gate lines have gate pads at one end, while the... | 02/29/2000 |
| 5990490 | Optical electronic IC capable of photo detection An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the s... | 11/23/1999 |
| 5973335 | Semiconductor memory devices with amorphous silicon alloy A semiconductor memory device includes first and second conductive contact layers (12, 15) and an hydrogenated, silicon-rich, amorphous silicon alloy layer (14), particularly an amorphous silicon nitride or amorphous silicon carbide alloy, extending betwe... | 10/26/1999 |
| 5942049 | Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-juncti... | 08/24/1999 |
| 5821558 | Antifuse structures An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by an ion-implantation... | 10/13/1998 |
| 5814832 | Electron emitting semiconductor device An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural... | 09/29/1998 |
| 5562781 | Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together in layers, every ... | 10/08/1996 |
| 5543634 | Method of forming semiconductor materials and barriers In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconduc... | 08/06/1996 |
| 5521400 | Semiconductor photoelectrically sensitive device with low sodium concentration A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 05/28/1996 |
| 5449924 | Photodiode having a Schottky barrier formed on the lower metallic electrode A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina fil... | 09/12/1995 |
| 5449923 | Amorphous silicon color detector An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 μm, and the m... | 09/12/1995 |
| 5442205 | Semiconductor heterostructure devices with strained semiconductor layers A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Gex Si1-x epitaxial layer overlain by a ungraded Gex.sbsb.0 Si... | 08/15/1995 |
| 5336905 | Semiconductor device having an insulating substrate and Schottky diodes Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between a metal layer and... | 08/09/1994 |
