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| Number | Title | Issue Date |
| 8138574 | PCM with poly-emitter BJT access devices A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a pol... | 03/20/2012 |
| 8125051 | Device layout for gate last process A semiconductor device is provided that includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, an isolation structure formed in the second region, at least one junction device formed p... | 02/28/2012 |
| 7847373 | Fabricating bipolar junction select transistors for semiconductor memories A bipolar junction transistor may act as a select device for a semiconductor memory. The bipolar junction transistor may be formed of a stack of base and collector layers. Sets of parallel trenches are formed in a first direction down to the base and in a second dir... | 12/07/2010 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7350292 | Method for affecting impedance of an electrical apparatus A method for affecting an impedance of a portion of an electrical circuit loop in an electrical circuit apparatus includes providing an electrical circuit apparatus having at least a portion of an electrical circuit loop including at least one of at least one trace ... | 04/01/2008 |
| 7342824 | Method of programming a 3D RRAM A memory array layer for use in a 3D RRAM is formed, with peripheral circuitry, on a silicon substrate; layers of silicon oxide, bottom electrode material, silicon oxide, resistor material, silicon oxide, silicon nitride, silicon oxide, top electrode and covering ox... | 03/11/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7319377 | Method for making high-performance RF integrated circuits A new method and structure is provided for the creation of a semiconductor inductor. Under the first embodiment of the invention, a semiconductor substrate is provided with a scribe line in a passive surface region and active circuits surrounding the passive region.... | 01/15/2008 |
| 7282759 | Memory device having serially connected resistance nodes A memory device may include a plurality of resistance nodes. The resistance nodes may be connected serially in a NAND or AND structure, by a plurality of metal plugs. The metal plugs may have a lower resistance. A control device corresponding to each resistance node... | 10/16/2007 |
| 7235846 | ESD protection structure with SiGe BJT devices The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. This improved ESD protection scheme further uses the combinatio... | 06/26/2007 |
| 7208814 | Resistive device and method for its production A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current pa... | 04/24/2007 |
| 7173445 | Sensor for inspection instrument and inspection instrument Disclosed is an inspection sensor and inspection apparatus capable of accurately inspecting the shape of a conductive pattern. A sensor element 12a includes an MOSFET, and an aluminum electrode (AL) serving as a passive element 80. The passive e... | 02/06/2007 |
| 7135755 | Integrated semiconductor device providing for preventing the action of parasitic transistors An electric motor drive system is disclosed which includes a required number of motor driver circuits connected one to each motor armature coil. Fabricated in the form of an integrated circuit, each such motor driver circuit has a parasitic transistor unavoidably cr... | 11/14/2006 |
| 7135756 | Array of cells including a selection bipolar transistor and fabrication method thereof A cell array is formed by a plurality of cells each including a selection bipolar transistor and a storage component. The cell array is formed in a body including a common collector region of P type; a plurality of base regions of N type, overlying the common collec... | 11/14/2006 |
| 7136299 | High-density phase change cell array and phase change memory device having the same A phase change memory device and, more particularly, to a phase change memory cell array suitable for the implementation of a high-density memory device. The phase change memory cell array includes a first access transistor pair and a second access transistor pair f... | 11/14/2006 |
| 7078786 | Composite series resistor having reduced temperature sensitivity in an IC chip According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. Accordi... | 07/18/2006 |
| 7071516 | Semiconductor device and driving circuit for semiconductor device A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electr... | 07/04/2006 |
| 7034407 | Semiconductor device and method for fabricating the same A substrate 11 consists of a semiconductor layer 12 as an element formation region and an STI 13 as an isolation region. A gate dielectric 15 is provided on the semiconductor layer 12, and a gate electrode 14 is provided to ... | 04/25/2006 |
| 7026690 | Memory devices and electronic systems comprising integrated bipolar and FET devices The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) const... | 04/11/2006 |
| 6998698 | Memory cell with a perovskite structure varistor The present invention provides a memory cell having a variable resistor as a memory element, and also provides a memory device comprising the memory cells. The variable resistor is made of a thin-film material (for example, PCMO) or the like having a perovskite stru... | 02/14/2006 |
| 6984870 | High speed cross-point switch using SiGe HBT technology A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably ... | 01/10/2006 |
| 6967406 | Semiconductor integrated circuit A layout method of a semiconductor integrated circuit is provided which improves characteristics of the circuit by giving hierarchical structure of interconnections regularity. A pair of emitter followers is disposed symmetrically with respect to a center line of a ... | 11/22/2005 |
| 6965132 | Polycrystalline silicon emitter having an accurately controlled critical dimension According to a disclosed embodiment, an etch stop layer is fabricated on top of a base. An amorphous layer is then formed on top of the etch stop layer. An opening is then etched in the amorphous layer and the etch stop layer. The opening is etched with an opening w... | 11/15/2005 |
| 6958523 | On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits An integrated circuit programmable structure (60) is formed for use a trim resistor and/or a programmable fuse. The programmable structure comprises placing heating elements (70) in close proximity to the programmable structure (60) to heat the ... | 10/25/2005 |
| 6943387 | Semiconductor device, manufacturing thereof and power amplifier module In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows r... | 09/13/2005 |
| 6927474 | Method of programming an antifuse A metal-to-metal capacitor in a semiconductor integrated circuit is converted to a conductive structure by connecting the first metal plate of the capacitor to ground and the second metal plate of the capacitor to a programming voltage, thus causing the insulator ma... | 08/09/2005 |
| 6881998 | Semiconductor device and method for producing the same A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance insulating film that is provided on the active region and has a boundary ... | 04/19/2005 |
| 6849921 | Semiconductor device A semiconductor device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate; a polysilicon resistor film formed on the first insulating film; a second insulating film formed on the resistor film; a high heat conductor fi... | 02/01/2005 |
| 6800924 | Device including a resistive path to introduce an equivalent RC circuit Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the dev... | 10/05/2004 |
| 6781213 | Device including a resistive path to introduce an equivalent RC circuit Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the dev... | 08/24/2004 |
| 6777779 | Device including a resistive path to introduce an equivalent RC circuit Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the dev... | 08/17/2004 |
| 6770949 | One-mask customizable phase-locked loop A system and method in accordance with the invention minimizes the redesign burden in tuning and/or customizing PLLs on ICs. Variable resistors are placed in the PLL in places that facilitate tuning. The variable resistors are formed with a set of at least three con... | 08/03/2004 |
| 6690082 | High dopant concentration diffused resistor and method of manufacture therefor The present invention provides a high dopant concentration diffused resistor, a method of manufacture therefor, and an integrated circuit including the same. In one embodiment of the invention, the high dopant concentration diffused resistor includes a do... | 02/10/2004 |
| 6642604 | Semiconductor device with resistor layer having heat radiation path to semiconductor substrate A resistor layer (5) is formed on an isolation insulating film (4) selectively formed in a major surface (1S) of a semiconductor substrate (1). An interlayer insulation film (7) covering the resistor layer (5) has first and second plugs (9, 19) buried the... | 11/04/2003 |
| 6639300 | Semiconductor integrated circuit having an integrated resistance region A semiconductor integrated circuit device comprises an active device and a resistance element formed monolithically on a common substrate wherein the resistance element includes a dummy pattern having a layered structure identical with a layered structure... | 10/28/2003 |
| 6630723 | Laser programming of integrated circuits Laser Programming of Integrated Circuits. The invention relates to the laser adjustment or laser programming of laser fuses of an integrated circuit on a chip, with laser light, the integrated circuit having a plurality of laser fuses and being connected ... | 10/07/2003 |
| 6600210 | Semiconductor device and method of manufacturing the same A semiconductor device is provided, which is provided with a high resistance to surge currents. The semiconductor device comprises three N+ diffusion layers 4a, 4b, and 4c in a region surrounded by an element-separating insulating film 3a. The ... | 07/29/2003 |
| 6586817 | Device including a resistive path to introduce an equivalent RC circuit Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced... | 07/01/2003 |
| 6534843 | High Q inductor with faraday shield and dielectric well buried in substrate Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bot... | 03/18/2003 |
| 6483168 | Integrated circuit having resistor formed over emitter of vertical bipolar transistor An integrated circuit including a resistor that at least partially overlies a first tub of semiconductor material of a first polarity, where the first tub is formed in a second tub of semiconductor material having the opposite polarity, and the second tub... | 11/19/2002 |
