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| Number | Title | Issue Date |
| 8169053 | Resistive random access memories and methods of manufacturing the same Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of th... | 05/01/2012 |
| 8093682 | Resistance memory element A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least ... | 01/10/2012 |
| 8058702 | Phase change memory cell A phase change memory cell is disclosed, including a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an active region of each of the recording layers can be changed to a cryst... | 11/15/2011 |
| 8049305 | Stress-engineered resistance-change memory device A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a resistive-switching element, a third layer above the second layer including a se... | 11/01/2011 |
| 7911031 | Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof Voltage-controlled semiconductor structures, voltage-controlled resistors, and manufacturing processes are provided. The semiconductor structure comprises a substrate, a first doped well, and a second doped well. The substrate is doped with a first type of ions. The... | 03/22/2011 |
| 7855434 | Semiconductor device capable of decreasing variations in size of metal resistance element A semiconductor device is provided wherein a foundation insulating film is formed over a semiconductor substrate, a metal resistance element is formed on the foundation insulating film, and contacts are formed at both ends of the metal resistance element in a longit... | 12/21/2010 |
| 7851888 | Nonvolatile memory and fabrication method thereof Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer compris... | 12/14/2010 |
| 7759771 | Resistance random access memory and method of manufacturing the same Provided are a resistance random access memory including a resistance layer having a metal oxide and/or a metal ion dopant, which may be deposited at room temperature and which may have variable resistance characteristics, and a method of manufacturing the same.... | 07/20/2010 |
| 7679163 | Phase-change memory element A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the compo... | 03/16/2010 |
| 7649242 | Programmable resistive memory cell with a programmable resistance layer A programmable resistive memory cell comprising a lower electrode, a programmable resistance layer, and an upper electrode, wherein a lower mask is arranged between the lower electrode and the programmable resistance layer and an upper mask is arranged between the p... | 01/19/2010 |
| 7569909 | Phase change memory devices and methods for manufacturing the same Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the substrate and a phase change material layer is embedded in the diele... | 08/04/2009 |
| 7518213 | Nonvolatile variable resistance memory device and method of fabricating the same A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode dis... | 04/14/2009 |
| 7439147 | Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer... | 10/21/2008 |
| 7429780 | Fuse circuit and semiconductor device including the same A semiconductor device includes a fuse circuit, which includes a first conductive region and a second conductive region. The first conductive region has a multi-layered structure, and the second conductive region has a less layered structure than the first conductiv... | 09/30/2008 |
| 7425753 | Semiconductor device A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower l... | 09/16/2008 |
| 7414295 | Transistor and method of operating transistor A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a seco... | 08/19/2008 |
| 7400006 | Conductive memory device with conductive oxide electrodes A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even a... | 07/15/2008 |
| 7400026 | Thin film resistor structure The present invention relates to a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a conduct... | 07/15/2008 |
| 7397092 | Phase changable memory device structures A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole... | 07/08/2008 |
| 7387938 | Methods of forming phase change storage cells for memory devices Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist pha... | 06/17/2008 |
| 7372127 | Low cost and versatile resistors manufactured from conductive loaded resin-based materials Resistor devices are formed of a conductive loaded resin-based material. The conductive loaded resin-based material comprises micron conductive powder(s), conductive fiber(s), or a combination of conductive powder and conductive fibers in a base resin host. The cond... | 05/13/2008 |
| 7355282 | Post passivation interconnection process and structures A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of poly... | 04/08/2008 |
| 7348653 | Resistive memory cell, method for forming the same and resistive memory array using the same A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly pa... | 03/25/2008 |
| 7341958 | Integrated process for thin film resistors with silicides The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a ... | 03/11/2008 |
| 7335967 | Semiconductor device A semiconductor device is provided that includes: a base insulating film; a metal thin-film resistor that is provided on the base insulating film; a lower-layer insulating film that is formed under the base insulating film; and a wiring pattern that is formed on the... | 02/26/2008 |
| 7332794 | System and method for providing a self heating adjustable TiSiresistor A system and method is disclosed for providing a self heating adjustable titanium disilicon (TiSi2) resistor. A triangularly shaped layer of polysilicon is placed a layer of insulation material. A layer of titanium is applied over the polysilicon and heat... | 02/19/2008 |
| 7323749 | Semiconductor device comprising an integrated circuit A semiconductor device with a plurality of passive components (7,7a,8,8a) comprising a bottom substrate (1), a buried oxide layer (2) on a portion of the top surface of the bottom substrate (1), an dielectric intermed... | 01/29/2008 |
| 7323751 | Thin film resistor integration in a dual damascene structure A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over t... | 01/29/2008 |
| 7323762 | Semiconductor package substrate with embedded resistors and method for fabricating the same A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a plurality of resistor electrodes are formed in the fist circuit laye... | 01/29/2008 |
| 7323733 | Nonvolatile memory and fabrication method thereof A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode inc... | 01/29/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7315465 | Methods of operating and forming chalcogenide glass constant current devices The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximat... | 01/01/2008 |
| 7312515 | Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at ... | 12/25/2007 |
| 7307335 | Semiconductor device having MOS varactor and methods for fabricating the same A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a ca... | 12/11/2007 |
| 7298020 | Semiconductor device and method of manufacturing the same A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (... | 11/20/2007 |
| 7279217 | Multilayer ceramic device, method for manufacturing the same, and ceramic device There is provided a multilayer ceramic device enabling achievement of secure electric connection via electroconductive members in through holes and reduction in the thickness of internal electrodes during manufacturing. In multilayer piezoelectric device 1, a... | 10/09/2007 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7276777 | Thin film resistor and method of making the same One embodiment of an integrated circuit includes a substrate and a SiWNi thin film resistor formed on the substrate. ... | 10/02/2007 |
| 7253074 | Temperature-compensated resistor and fabrication method therefor A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration ... | 08/07/2007 |
| 7239002 | Integrated circuit device In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An ... | 07/03/2007 |
