Bizarre Patents
Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 8169051 | Semiconductor device including capacitor element and method of manufacturing the same A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an... | 05/01/2012 |
| 8164161 | Structure of trench capacitor and method for manufacturing the same A structure of trench capacitor and method for manufacturing the trench capacitor is provided. The collar oxide layer of the trench capacitor is formed by a thermal oxidation process. Moreover, a protective layer such as silicon nitride covers the collar oxide layer... | 04/24/2012 |
| 8164160 | Semiconductor device A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the co... | 04/24/2012 |
| 8159046 | Capacitor and method for fabricating the same A capacitor includes a lower electrode; a dielectric layer formed on a predetermined portion of the lower electrode; an upper electrode formed on the dielectric layer; a hard mask pattern formed on the upper electrode; and an isolation layer having a shape of a spac... | 04/17/2012 |
| 8159047 | Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors A semiconductor device includes conductive pillars disposed vertically over a seed layer, a conformal insulating layer formed over the conductive pillars, and a conformal conductive layer formed over the conformal insulating layer. A first conductive pillar, the con... | 04/17/2012 |
| 8159045 | Semiconductor device with shield line disposed between capacitors A semiconductor device includes: a first capacitor including an upper electrode, a lower electrode, an intermediate electrode arranged between the upper electrode and the lower electrode, and a shield line arranged in the same layer as the intermediate electrode; an... | 04/17/2012 |
| 8148798 | Semiconductor device and method for manufacturing the same The semiconductor device includes a capacitor 36 formed over a semiconductor substrate 10 and including a lower electrode 30, a dielectric film 32 and an upper electrode 34; a first insulation film 58 formed above the capaci... | 04/03/2012 |
| 8143697 | Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the fir... | 03/27/2012 |
| 8143698 | Semiconductor device A problem of an increased manufacturing cost is caused in conventional semiconductor devices. A semiconductor device 1 includes: a lower electrode 102 provided on a semiconductor substrate 101; an insulating film 105, provided on the lowe... | 03/27/2012 |
| 8143699 | Dual-dielectric MIM capacitors for system-on-chip applications An integrated circuit structure includes a chip having a first region and a second region. A first metal-insulator-metal (MIM) capacitor is formed in the first region. The first MIM capacitor has a first bottom electrode; a first top electrode over the first bottom ... | 03/27/2012 |
| 8138572 | Semiconductor device and method for fabricating the same The present invention relates to a semiconductor and manufacturing method thereof, in which a nano tube structure is vertically grown to form a lower electrode of a cell region and a via contact of peripheral circuit region. Therefore, capacitance of the lower elect... | 03/20/2012 |
| 8134222 | MOS capacitor structures Methods and apparatus are described for MOS capacitors (MOS CAPs). The apparatus comprises a substrate having Ohmically coupled N and P semiconductor regions covered by a dielectric. A conductive electrode overlies the dielectric above these N and P regions. Use of ... | 03/13/2012 |
| 8125049 | MIM capacitor structure in FEOL and related method A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upp... | 02/28/2012 |
| 8120144 | Method for forming dual high-K metal gate using photoresist mask and structures thereof Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by... | 02/21/2012 |
| 8120143 | Integrated circuit comb capacitor The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at... | 02/21/2012 |
| 8115277 | Integrated circuit having a material structured by a projection A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-di... | 02/14/2012 |
| 8115276 | Integrated circuit system employing back end of line via techniques An integrated circuit system that includes: providing a substrate including front-end-of-line circuitry; forming a first metallization layer over the substrate and electrically connected to the substrate; forming a viabar or a via group over the first metallization ... | 02/14/2012 |
| 8110896 | Substrate structure with capacitor component embedded therein and method for fabricating the same A capacitor components embedded substrate structure comprises a substrate, capacitor components, a first and second dielectric layers, and a circuit layer. The substrate includes a first surface, a second surface, and a hole penetrating the first and the second surf... | 02/07/2012 |
| 8106478 | Semiconductor device and storage medium A power source noise of a semiconductor device having a core cell configuring a logic circuit is reduced. Above the core cell configuring the logic circuit provided on a main surface of a semiconductor substrate are provided a first branch line for a first power sou... | 01/31/2012 |
| 8102020 | Equalization in proximity communication A device includes a semiconductor die having a surface, a plurality of proximity connectors proximate to the surface, and a circuit coupled to at least one of the plurality of proximity connectors. The semiconductor die is configured to communicate voltage-mode sign... | 01/24/2012 |
| 8102021 | RF devices A low cost passive RFID tag uses capacitive or inductive coupling between the RF IC chip and the antenna. Coupling elements are formed directly on the surface of the RF IC chip. ... | 01/24/2012 |
| 8102022 | Semiconductor device manufacturing method and semiconductor device In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. Wh... | 01/24/2012 |
| 8102023 | Capacitor insulating film, capacitor, and semiconductor device A capacitor insulating film for use as an insulating film sandwiched between two electrodes is made of a crystal containing a hafnium element in a titanium site in place of a part of titanium elements contained in a crystal of a strontium titanate or barium strontiu... | 01/24/2012 |
| 8089135 | Back-end-of-line wiring structures with integrated passive elements and design structures for a radiofrequency integrated circuit Back-end-of-line (BEOL) wiring structures that include a passive element, such as a thin film resistor or a metal-insulator-metal capacitor, and multiple-height vias in a metallization level, as well as design structures for a radiofrequency integrated circuit. The ... | 01/03/2012 |
| 8084841 | Systems and methods for providing high-density capacitors The present invention describes systems and methods for providing high-density capacitors. An exemplary embodiment of the present invention provides a high-density capacitor system comprising a substrate and a porous conductive layer formed on the substrate, wherein... | 12/27/2011 |
| 8076752 | Fringe capacitor using bootstrapped non-metal layer Capacitors configured in a switched-capacitor circuit on a semiconductor device may comprise very accurately matched, high capacitance density metal-to-metal capacitors, using top-plate-to-bottom-plate fringe-capacitance for obtaining the desired capacitance values.... | 12/13/2011 |
| 8076753 | Semiconductor device and method of manufacturing the same In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, hav... | 12/13/2011 |
| 8067817 | Semiconductor device and method of manufacturing the same A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric f... | 11/29/2011 |
| 8053865 | MOM capacitors integrated with air-gaps An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the firs... | 11/08/2011 |
| 8049302 | On-chip capacitor structure with adjustable capacitance At least a first capacitor is formed on a substrate and connected to a first differential node of a differential circuit, and the first capacitor may be variable in capacitance. A second capacitor is formed on the substrate and connected to a second differential nod... | 11/01/2011 |
| 8049303 | Semiconductor device with power noise suppression A semiconductor chip and a semiconductor device mounting the semiconductor chip capable of increasing a capacitance of a capacitor without reducing the number of signal bumps or power bumps of a package and the number of C4 solder balls of the semiconductor c... | 11/01/2011 |
| 8049304 | Constructions comprising hafnium oxide and/or zirconium oxide The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxid... | 11/01/2011 |
| 8044491 | Semiconductor device and method of manufacturing the same The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the... | 10/25/2011 |
| 8039923 | Interdigitated capacitors The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide opti... | 10/18/2011 |
| 8039922 | Variable capacitor employing MEMS technology When a positive voltage of V1 is applied to a drive capacitor with a braking voltage V2 at 0V, a moveable electrode moves toward the drive electrode, and a capacitance C of a tunable capacitor becomes smaller. When the braking voltage V2 is appl... | 10/18/2011 |
| 8035194 | Semiconductor device and semiconductor package including the same Provided is a semiconductor device capable of removing a power ground grid noise using a small area. The semiconductor device includes a first chip including at least one decoupling capacitor; and a second semiconductor chip stacked over the first semiconductor chip... | 10/11/2011 |
| 8035193 | Method of fabricating capacitor in semiconductor device A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of f... | 10/11/2011 |
| 8030737 | Semiconductor device and method of manufacturing the same A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulatin... | 10/04/2011 |
| 8022504 | Semiconductor device having capacitor with upper electrode whose circumference is made long and its manufacture method A capacitor is formed over a semiconductor substrate. The capacitor includes a lower electrode, a capacitor dielectric film and an upper electrode in this order recited, and has an area S equal to or larger than 1000 μm2 and L/S equal to or larger than 0... | 09/20/2011 |
| 8004063 | Precision high-frequency capacitor formed on semiconductor substrate A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A s... | 08/23/2011 |
