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| Number | Title | Issue Date |
| 8441095 | Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a... | 05/14/2013 |
| 8432014 | Methods of fabricating semiconductor devices and structures thereof Methods of fabricating semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a gate material stack over a workpiece having a first region and a second region. A composition or... | 04/30/2013 |
| 8395231 | Semiconductor device supplying charging current to element to be charged A semiconductor device supplying a charging current to a charging-target element includes: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type formed on a main surface of the semiconductor layer and having a... | 03/12/2013 |
| 8324706 | Semiconductor device and a method of manufacturing the same A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high... | 12/04/2012 |
| 8294236 | Semiconductor device having dual-STI and manufacturing method thereof A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory ... | 10/23/2012 |
| 8283747 | Semiconductor device and fabrication method of the same A semiconductor device including a first conduction type semiconductor layer; a second conduction type element forming region formed above the first conduction type semiconductor layer and formed with at least one semiconductor element formed on a surface region of ... | 10/09/2012 |
| 8264057 | Semiconductor device driving bridge-connected power transistor A semiconductor device includes a low-side circuit, high-side circuit, a virtual ground potential pad, a common ground potential pad and a diode, formed on a semiconductor substrate. The low-side circuit drives a low-side power transistor. The high-side circuit is p... | 09/11/2012 |
| 8227888 | Semiconductor component with countersignal circuit for preventing crosstalk between electronic assemblies A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate s... | 07/24/2012 |
| 8217487 | Power semiconductor device Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control ... | 07/10/2012 |
| 8138570 | Isolated junction field-effect transistor An isolation structure for a semiconductor device comprises a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This str... | 03/20/2012 |
| 8129815 | High-voltage transistor device with integrated resistor A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially proportional to an external voltage when the external voltage is less than ... | 03/06/2012 |
| 8125044 | Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor... | 02/28/2012 |
| 8044487 | Semiconductor device and method of manufacturing the same A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is for... | 10/25/2011 |
| 8013416 | Semiconductor device This semiconductor device includes a first device and a second device provided on a semiconductor substrate and having different breakdown voltages. More specifically, the semiconductor device includes a semiconductor substrate, a first region defined on the semicon... | 09/06/2011 |
| 7994603 | Semiconductor device and a method of manufacturing the same Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors... | 08/09/2011 |
| 7939907 | Semiconductor device including a digital semiconductor element and an analog semiconductor element in a common semiconductor device High density mounting and power source sharing are achieved by a digital semiconductor element and an analog semiconductor element provided in a common semiconductor device. A power layer for analog operation is connected to one end of an EBG (Electromagnetic Band G... | 05/10/2011 |
| 7923805 | Semiconductor device including high voltage and low voltage MOS devices Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage t... | 04/12/2011 |
| 7906828 | High-voltage integrated circuit device including high-voltage resistant diode A high-voltage integrated circuit includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region having a plurality of semiconductor devices, which operate with respect... | 03/15/2011 |
| 7893517 | Semiconductor device with block layer and method of manufacturing the same A semiconductor memory device includes a well layer having a first conductivity type and formed in a semiconductor substrate, a block layer formed in a trench and formed of an insulating layer, a gate electrode formed on the semiconductor substrate apart from the bl... | 02/22/2011 |
| 7888768 | Power integrated circuit device having embedded high-side power switch In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and ... | 02/15/2011 |
| 7859078 | Thin film transistor device and method of manufacturing the same A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film transistor are formed with a molybdenum film on the first insulating ... | 12/28/2010 |
| 7847365 | MOSFET with isolation structure for monolithic integration and fabrication method thereof A MOSFET device with an isolation structure for a monolithic integration is provided. A P-type MOSFET includes a first N-well disposed in a P-type substrate, a first P-type region disposed in the first N-well, a P+ drain region disposed in the first P-type region, a... | 12/07/2010 |
| 7838960 | Integrated circuit device and electronic instrument An integrated circuit device includes a high-speed I/F circuit block which transfers data through a serial bus, and a driver logic circuit block which generates a display control signal. A first-conductivity-type transistor included in the high-speed I/F circuit blo... | 11/23/2010 |
| 7825488 | Isolation structures for integrated circuits and modular methods of forming the same A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 11/02/2010 |
| 7816757 | Semiconductor device including a digital semiconductor element and an analog semiconductor element in a common semiconductor device High density mounting and power source sharing are achieved by a digital semiconductor element and an analog semiconductor element provided in a common semiconductor device. A power layer for analog operation is connected to one end of an EBG (Electromagnetic Band G... | 10/19/2010 |
| 7808071 | Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof One aspect of a semiconductor device includes an active region located in a semiconductor substrate and having an isolation region located therebetween. The active regions have corners adjacent the isolation region. An oxide layer is located over the active regions ... | 10/05/2010 |
| 7808070 | Power semiconductor component A power semiconductor component is disclosed. One embodiment provides a semiconductor body, in which at least two vertical power semiconductor components are arranged. Each of the vertical power semiconductor components has a first load terminal arranged at a front ... | 10/05/2010 |
| 7768094 | Semiconductor integrated circuit and wafer having diffusion regions differing in thickness and method for manufacturing the same A semiconductor integrated circuit includes a rectangular low speed circuit area including a low speed circuit comprising a low speed transistor having a first source extension region and a first drain extension region, and a rectangular high speed circuit area adja... | 08/03/2010 |
| 7745902 | System and method for providing improved trench isolation of semiconductor devices A system and method is disclosed for providing improved trench isolation of semiconductor devices. An isolation trench of the present invention is manufactured as follows. A substrate of a semiconductor device is provided and a trench is etched in the substrate. The... | 06/29/2010 |
| 7741694 | Semiconductor integrated circuit device A semiconductor integrated circuit device according to the present invention includes an N-type embedded diffusion region between a substrate and an epitaxial layer in first and second island regions serving as small signal section. The N-type embedded diffusion reg... | 06/22/2010 |
| 7732890 | Integrated circuit with high voltage junction structure The high voltage integrated circuit comprises a P substrate. An N well barrier is disposed in the substrate. Separated P diffusion regions forming P wells are disposed in the substrate for serving as the isolation structures. The low voltage control circuit is locat... | 06/08/2010 |
| 7719077 | Method for the production of a semiconductor component Disclosed is a method for the production of a semiconductor component provided with at least one first vertical power component (5,9) and at least one lateral, active component (6) and/or at least one second vertical power component (10) between... | 05/18/2010 |
| 7671441 | Trench MOSFET with sidewall spacer gates A semiconductor power device includes a semiconductor body with a plurality of gate trenches formed therein. Disposed within each gate trench is a spacer gate that extends along at least a portion of the sidewalls of the gate trench but not along at least a portion ... | 03/02/2010 |
| 7656004 | Display device A display device includes a display panel, first and second gate drivers and a data driver. The display panel includes pixel regions respectively having first, second and third pixels. The first pixel is coupled to first, second gate lines and a data line. The secon... | 02/02/2010 |
| 7592684 | Semiconductor device and method for manufacturing the same A semiconductor device is provided in which high breakdown voltage transistors and low voltage driving transistors are formed on the same substrate. The device includes a semiconductor layer, first element isolation regions for defining a high breakdown voltage tran... | 09/22/2009 |
| 7560792 | Reliable high voltage gate dielectric layers using a dual nitridation process Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric laye... | 07/14/2009 |
| 7545018 | High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof A high voltage operating field effect transistor has a substrate, a source region and a drain region which are spaced apart from each other in a surface of the substrate, a semiconductor channel formation region disposed in the surface of the substrate between the s... | 06/09/2009 |
| 7525172 | Semiconductor device Disclosed is a semiconductor device has a semiconductor substrate of a first conductivity type in which at least a first element-forming region and a second element-forming region are formed. Wells are formed in respective ones of the element-forming regions of the ... | 04/28/2009 |
| 7518209 | Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit Provided is a high-voltage integrated circuit device including a high-voltage resistant diode. The device includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region... | 04/14/2009 |
| 7514761 | Triple operation voltage device A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is provided. The HV first type well is disposed inside the first type s... | 04/07/2009 |
