Class 257/478 - Plural Schottky barriers with different barrier heights

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the integrated circuit containing
No. of patents: 37
Last issue date: 05/22/2012

Number	Title	Issue Date
8183660	Semiconductor component having rectifying junctions of different magnitudes and method for producing the same A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with res...	05/22/2012
7750427	Semiconductor device and a method of manufacturing the same A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type...	07/06/2010
7361592	Method for producing a component comprising at least one germanium-based element and component obtained by such a method The method successively comprises production, on a substrate, of a stack of layers comprising at least one first layer made from germanium and silicon compound initially having a germanium concentration comprised between 10% and 50%. The first layer is arranged betw...	04/22/2008
7238976	Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do...	07/03/2007
7192827	Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on...	03/20/2007
7164186	Structure of semiconductor device with sinker contact region A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the burie...	01/16/2007
7164183	Semiconductor substrate, semiconductor device, and method of manufacturing the same A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress t...	01/16/2007
6998620	Stable energy detector for extreme ultraviolet radiation detection A detector for use with an EUV photon source emitting around 11-15 nm includes at least one multilayer mirror for reflecting the beam along an optical path include a detector element, a filter for reducing the bandwidth of the beam, and the detector element. The det...	02/14/2006
6995446	Isolating phase change memories with schottky diodes and guard rings A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized. ...	02/07/2006
6972470	Dual metal Schottky diode An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode ...	12/06/2005
6787871	Integrated schottky barrier diode and manufacturing method thereof An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates...	09/07/2004
6764918	Structure and method of making a high performance semiconductor device having a narrow doping profile A structure and method of making an NPN heterojunction bipolar transistor (100) includes a semiconductor substrate (11) with a first region (82) containing a dopant (86) for forming a base region of the transistor. A second region (84	07/20/2004
6734515	Semiconductor light receiving element A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that...	05/11/2004
6670650	Power semiconductor rectifier with ring-shaped trenches A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n- drift layer is formed on an n+ cat...	12/30/2003
6483164	Schottky barrier diode A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound....	11/19/2002
6462393	Schottky device An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The l...	10/08/2002
6104043	Schottky diode of SiC and a method for production thereof A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer reg...	08/15/2000
6087704	Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Scho...	07/11/2000
5930636	Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector...	07/27/1999
5793670	Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistors and method of manufacturing bipolar transistors A memory cell includes first and second driver transistors, first and second access transistors and first and second load elements, and in addition, first and second bipolar transistors. Accordingly, static noise margin is enlarged. The first bipolar tran...	08/11/1998
5469103	Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a...	11/21/1995
5371400	Semiconductor diode structure Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high...	12/06/1994
5349230	Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a...	09/20/1994
5272370	Thin-film ROM devices and their manufacture A thin-film ROM device includes an array of open circuit and closed-circuit cells (5 to 8) formed from a stack of thin films (12,21,22,23,11) on a glass or other substrate (10). The semiconductor films (21,22,23) may be of hydrogenated amorphous silicon. ...	12/21/1993
5262668	Schottky barrier rectifier including schottky barrier regions of differing barrier heights A Schottky barrier rectifier includes regions of different Schottky barrier heights. Preferably, alternating regions of relatively high and relative low barrier heights are provided on a semiconductor substrate and are electrically connected in parallel t...	11/16/1993
5243199	High frequency device Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high freq...	09/07/1993
4845387	Non-stacked ECL type and function A logic circuit which includes first and second differentially connected amplifying devices having first and second complementary output voltage nodes. Means for limiting the output voltage swing of the devices at the output nodes to a predetermined range...	07/04/1989
4835580	Schottky barrier diode and method The preferred embodiments include Schottky barrier diode (80) clmaped bipolar transistors for use in planar integrated circuits with the diode (80) being formed in a trench to increase junction area, reduce series resistance from junction to the buried la...	05/30/1989
4646115	Semiconductor devices having field-relief regions Separate areas of an active unipolar barrier, e.g. a Schottky barrier, of a semiconductor device are located between closely-spaced field-relief regions which provide the device with an improved voltage blocking characteristic. The flow of minority carrie...	02/24/1987
4619035	Method of manufacturing a semiconductor device including Schottky barrier diodes A method of manufacturing a semiconductor device manufactures a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate. The method includes (a) a step of forming at least one Schottky ...	10/28/1986
4536945	Process for producing CMOS structures with Schottky bipolar transistors A process is disclosed for making CMOS transistors in combination with self-aligned fully oxide isolated Schottky clamped bipolar transistors....	08/27/1985
4394673	Rare earth silicide Schottky barriers In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of .gtorsim.0.7 eV) are also available by practice o...	07/19/1983
4214256	Tantalum semiconductor contacts and method for fabricating same A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the...	07/22/1980
4183036	Schottky-transistor-logic A Schottky-transistor-logic arrangement is disclosed which comprises a highly doped semiconductor substrate of one conductivity type. An epitaxial layer of the same conductivity type is formed on the substrate. A deep-implanted doped zone of the other con...	01/08/1980
4136348	Manufacture of gold barrier Schottky diodes A low reverse current gold barrier Schottky diode is produced by introduction of a highly reducing metal layer between the substrate and the gold layer through which the gold is diffused to contact the substrate. As such reducing metal, chromium gives goo...	01/23/1979
4076556	Method for fabrication of improved bipolar injection logic circuit An integrated transistor circuit arrangement provides a multicollector transistor with Schottky diodes and ohmic connections selectively formed at the collector terminals. In the illustrative example, a vertical transistor is formed in an N-type epitaxial...	02/28/1978

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Class 257/478 - Plural Schottky barriers with different barrier heights